• Title/Summary/Keyword: NiCr films

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Adhesion of Cu/Interlayer/Polyimide Flexible Copper Clad Laminate Depending on the Ni-Cr-X Interlayers

  • Kim, Si Myeong;Jo, Yoo Shin;Kim, Sung June;Kim, Sang Ho
    • Journal of the Korean institute of surface engineering
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    • v.50 no.3
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    • pp.164-169
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    • 2017
  • Ni-Cr-X ternary interlayers were investigated to improve the adhesion of Cu/Ni-Cr/Polyimide flexible copper clad laminates. The ternary compounds are sputtered Ni-Cr-X films (where X is one of Nb, V, Mo, or Ti), and the effect of third elements on the adhesion was evaluated and investigated chemically and mechanically. The feel strength was higher in the order of Ni-Cr-Nb > Ni-Cr-V > Ni-Cr > Ni-Cr-Mo > Ni-Cr-Ti. Nb, which has a comparable standard electrode potential to Cr, increased the adhesion, while Ti, with a low standard electrode potential, degraded the adhesion. The Ni-Cr-Nb interlayer was amorphous, while Ni-Cr-Ti was partially crystalline. The similar morphology structure of the Ni-Cr-Nb interlayer with polyimide resulted in a better adhesion.

Electrical Characteristics and Fabrication of NiCr/NiCrSi Alloy Film for High Precision Thin Film Resistors (고정밀급 박막저항을 위한 NiCr/NiCrSi박막의 제조 및 전기적 특성)

  • Lee, Boong-Joo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.6
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    • pp.520-526
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    • 2007
  • In order to acquire fundamental informations to fabricate high precision thin film resistors, NiCr/NiCrSi alloy films were prepared using Ni and Cr targets. Effect of composition on the electrical properties of the NiCr/NiCrSi alloy film were then investigated. Considering the effect of Si doping on the electrical and material characteristics, the lower TCR (temperature coefficient of resistance) values could be achieved for samples with Ni/Cr ratio of $0.8{\sim}1.5$ (in a range of relative higher specific resistivity and Cr composition of $40\;wt%{\sim}55\;wt%$) and with Si doping. Consequently, the sample prepared using a DC power showed a good TCR of $-25\;ppm/^{\circ}C$, which implies that increase of specific resistivity and decrease of TCR would be achieved more efficiently not for Ni-Cr binary material but for Si doped Ni-Cr ternary material, and not using RF power but using DC power in the sputtering process.

Electrical properties of NiCr thin films deposited by rf magnetron sputtering (RF magnetron sputtering 방법으로 제작한 NiCr 박막의 전기적특성)

  • Kim, Dae-Yeon;Kwon, Jeong-Ho;Jeong, Yeon-Hak;Lee, Jae-Shin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.411-415
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    • 2002
  • Precision resistors were prepared by controlling the concentration of Ni and Cr deposited on cylindrical alumina substrates (diameter: 1.7mm, length: 5.5mm). Deposited films were analyzed with FESEM, AES, and AFM. As the amount of Cr in the film increases, the TCR was shifted to negative direction.

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Effects of Film Formation Conditions on the Chemical Composition and the Semiconducting Properties of the Passive Film on Alloy 690

  • Jang, HeeJin;Kwon, HyukSang
    • Corrosion Science and Technology
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    • v.5 no.4
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    • pp.141-148
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    • 2006
  • The chemical composition and the semiconducting properties of the passive films formed on Alloy 690 in various film formation conditions were investigated by XPS, photocurrent measurement, and Mott-Schottky analysis. The XPS and photocurrent spectra showed that the passive films formed on Alloy 690 in pH 8.5 buffer solution at ambient temperature, in air at $400^{\circ}C$, and in PWR condition comprise $Cr_2O_3$, $Cr(OH)_3$, ${\gamma}-Fe_2O_3$, NiO, and $Ni(OH)_2$. The thermally grown oxide in air and the passive film formed at high potential (0.3 $V_{SCE}$) in pH 8.5 buffer solution were highly Cr-enriched, whereas the films formed in PWR condition and that formed at low potential (-0.3 $V_{SCE}$) in pH 8.5 buffer solution showed relatively high Ni content and low Cr content. The Mott-Schottky plots exhibited n-type semiconductivity, inferring that the semiconducting properties of the passive films formed on Alloy 690 in various film formation conditions are dominated by Cr-substituted ${\gamma}-Fe_2O_3$. The donor density, i.e., concentration of oxygen vacancy, was measured to be $1.2{\times}10^{21}{\sim}4.6{\times}10^{21}cm^{-3}$ and lowered with increase in the Cr content in the passive film.

Thickness Dependence of the Electrical Properties in NiCr Thin Film Resistors Annealed in a Vacuum Ambient for π - type Attenuator Applications

  • Phuong Nguyen Mai;Lee Won-Jae;Yoon Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.8
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    • pp.712-716
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    • 2006
  • NiCr thin films prepared on $SiO_2/Si$ substrates at room temperature by magnetron co-sputtering technique and then annealed in a vacuum ambient $(3{\times}10^{-6}\;Torr)\;at\;400^{\circ}C$. The grain size and crystallinity of the films increased with film thickness. The resistivity of the films slightly decreases as the film thickness increases, Temperature coefficient resistance (TCR) exhibits positive values irrespective of film thickness and TCR in the range of 50 to 400 nm thickness shows suitable values for the application of 10 dB in ${\pi}-type$ attenuators.

The Anodicc PolarizationBehavior of Fe-Cr-Ni-W alloy in 1N HCI Solution (1N 염산 용액에서 Fe-Cr-Ni-W 합금의 양분극 거동에 관한 연구)

  • 윤재돈;강성군
    • Journal of the Korean institute of surface engineering
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    • v.21 no.4
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    • pp.176-182
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    • 1988
  • Effects of Cr, Ni and W on the anodic polarization behavior were investigated for Fe-Cr-Ni-W alloys in deaerated 1N HCI solution. Surface films formed on the polarization were analysed using AES, SEM and EDAX. A higerconcentration of tungten was found in the surface oxide film compared to the matrix. It played an importanet role on incresing the stability of the passive film. The presence of an adequate amount of Cr was essential to increase the pitting resistance of the alloys in acid chloride media. Under 12 wt%cr,alloys containing 6wt%W did not exhidit any passivity at all. The main role of Ni was to control the microstructure rather than to modify the corrosion resistance. In 23 cr-14Ni-^W alloy, the duplex microstructure of ferrite($\delta$-phase) in an austenic matrix was developed. The reson why proferred pitting appeared in austenite and ferrite/austenite interface was that ferrite had more amount of Cr and W than austenite.

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Magnetic Properties of (Co-Cr)-P-Ni Alloy Thin Film ((Co-Cr)-P-Ni 합금 박막의 자기적 특성)

  • 박창민;신경호;손홍균;이택동
    • Journal of the Korean Magnetics Society
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    • v.5 no.2
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    • pp.134-139
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    • 1995
  • We produced $(Co_{93}Cr_{7})-P-Ni$ thin films for longitudinal magnetic recording media using OC magnetron sputtering system The variation of magnetic properties of $(Co_{93}Cr_{7})-P-Ni$ pseudo-ternary system with the composition was examined. We obtained the coercivity up to 1500 Oe. The coercivity iocrease could be ascribed to in-plane anisotropy enhaocement, grain size decrease, magnetic decoupling between particles. TEM micrographs showed that the grains were well-decoupled by the addition of phosphorous.

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The Effect of Annealing on Corrosion Behavior of CoCrTa/CrNi Magnetic Recording Media (CoCrTa/CrNi 자기기록매체의 열처리에 따른 부식거동 변화)

  • 우준형;남인탁
    • Journal of the Korean Magnetics Society
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    • v.9 no.4
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    • pp.210-216
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    • 1999
  • The objective of this paper is to investigate corrosion behaviors of CoCrTa/CrNi thin film and post heat-treatment effect. An electron beam evaporator was used for films deposition. After evaporation, post heat-treatment was carried out under $5.0{\times}10^3$ Torr vacuum condition. Annealing temperature and time were 400 $^{\circ}C$ and 30 min, respectively. To understand the effect of annealing on corrosion behavior of CoCrTa/CrNi, potentiodynamic polarization technique and accelerated corrosion chamber test were undertaken. Corrosion potential is higher for the annealed samples (CoCrTa 400$\AA$/CrNi 1000$\AA$) than for as-deposited one. This is attributed to an enrichment of Cr in the surface layer of the thinfilm resulting in a more corrosion resistant material.

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Structural and electrical properties of the NiCr thin film resistors deposited at various temperatures on $SiO_2$/Si substrate

  • Phuong, Nguyen Mai;Cuong, Nguyen Duy;Kim, Dong-Jin;Kang, Byoung-Don;Kim, Chang-Soo;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.337-338
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    • 2006
  • The 200 nm thick-NiCr films grew on $SiO_2$/Si substrates at various deposition temperatures by a dc magnetron co-sputtering technique were characterized for the variation of film texture. The resistivity of the films decreases with increasing deposition temperature and temperature coefficient of electrical resistance (TCR) varies from negative value to a positive one with increasing deposition temperature. The NiCr films deposited at $300^{\circ}C$ exhibit 4 ppm/K being near zero TCR, resulting in TCR suitable for $\pi$-type attenuator applications.

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Microstructural Investigation of CoCrFeMnNi High Entropy Alloy Oxynitride Films Prepared by Sputtering Using an Air Gas

  • Le, Duc Duy;Hong, Soon-Ku;Ngo, Trong Si;Lee, Jeongkuk;Park, Yun Chang;Hong, Sun Ig;Na, Young-Sang
    • Metals and materials international
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    • v.24 no.6
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    • pp.1285-1292
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    • 2018
  • Microstructural properties of as-grown and annealed CoCrFeMnNi high entropy alloy (HEA) oxynitride thin films were investigated. The CoCrFeMnNi HEA oxynitride thin film was grown by magnetron sputtering method using an air gas, and annealed under the argon plus air flow for 5 h at $800^{\circ}C$. The as-grown film was homogeneous and uniform composed of nanometer-sized crystalline regions mixed with amorphous-like phase. The crystalline phase in the as-grown film was face centered cubic structure with the lattice constant of 0.4242 nm. Significant microstructural changes were observed after the annealing process. First, it was fully recrystallized and grain growth happened. Second, Ni-rich region was observed in nanometer-scale range. Third, phase change happened and it was determined to be $Fe_3O_4$ spinel structure with the lattice constant of 0.8326 nm. Hardness and Young's modulus of the as-grown film were 4.1 and 150.5 GPa, while those were 9.4 and 156.4 GPa for the annealed film, respectively.