Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Thickness Dependence of the Electrical Properties in NiCr Thin Film Resistors Annealed in a Vacuum Ambient for π - type Attenuator Applications

  • Phuong Nguyen Mai (Department of Nano Technology, Chungnam University) ;
  • Lee Won-Jae (Department of Nano Technology, Dongeui University) ;
  • Yoon Soon-Gil (Department of Nano Technology, Chungnam University)
  • Published : 2006.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

NiCr thin films prepared on $SiO_2/Si$ substrates at room temperature by magnetron co-sputtering technique and then annealed in a vacuum ambient $(3{\times}10^{-6}\;Torr)\;at\;400^{\circ}C$. The grain size and crystallinity of the films increased with film thickness. The resistivity of the films slightly decreases as the film thickness increases, Temperature coefficient resistance (TCR) exhibits positive values irrespective of film thickness and TCR in the range of 50 to 400 nm thickness shows suitable values for the application of 10 dB in ${\pi}-type$ attenuators.

Keywords

References

  1. A. Peled, Y. Zloof, J. Ferhadyan, and A. M. Peled, 'A study of the temperature dependence of NiCr thin film resistors', Solid-State Electron., Vol. 34, p. 667, 1991 https://doi.org/10.1016/0038-1101(91)90143-M
  2. G. Nocerino and K. E. Singer, 'The electrical and compositional structure of thin Ni-Cr films', Thin Solid Films, Vol. 57, p. 343, 1979 https://doi.org/10.1016/0040-6090(79)90176-7
  3. R. Tavzes, E. Kansky, A. Banovek, A. Zalar, M. Gregorec, A. Barna, P. B. Barna, and I. Pozsgai, 'The evaluation of the technology for depositing NiCr resistive films', Thin Solid Films, Vol. 36, p. 379, 1976
  4. M. P. Nguyen, D. J. Kim, B. D. Kang, C. S. Kim, and S. G. Yoon, 'Effect of chromium concentration on the electrical properties of NiCr thin films resistor deposited at room temperature by magnetron co-sputtering technique', J. Electrochem. Soc., Vol. 153, No.1, p. G27, 2006 https://doi.org/10.1149/1.2129332
  5. L. Toth, A. Barna, and G. Safran, 'In situ transmission electron microscopy annealing of NiCR thin films with simultaneous Hall-voltage measurement', J. Vac. Sci. Technology, Vol. A5, p. 1856, 1987
  6. T. C. Huang and J. K. Howard, 'Characterization of Ni-Cr thin films by X-ray analysis', Thin Solid Films, Vol. 148, p. 209, 1987 https://doi.org/10.1016/0040-6090(87)90159-3
  7. M. P. Nguyen, D. J. Kim, B. D. Kang, and S. G. Yoon, 'Structural and electrical properties of NiCr thin film resistors anneaed at various temperature in a vacuum and at nitrogen ambient', J. Electrochem. Soc., Vol. 153, No.7, p. G660, 2006 https://doi.org/10.1149/1.2202696
  8. M. Ishikawa, H. Enomoto, N. Mikamoto, T. Nakamura, M. Matsuoka, and C. Iwakura, 'Preparation of thin film resistors with low resistivity and low TCR by heat treatment of multilayered Cu/Ni deposits', Surf. Coat. Technol., Vol. 110, p. 121, 1998
  9. B. D. Kang, S. G. Hur, D. J. Kim, and S. G. Yoon, 'Thickness dependence of the electrical properties of CuNi thin film resistors grown on AIN substrates for II-type attenuator application', Electrochem. Solid. State. Lett., Vol. 8, No.4, p. G92, 2005 https://doi.org/10.1149/1.1862475
  10. B. W. Liou, Y. H. Wu, C. L. Lee, and T. F. Lei, 'Thickness effect on hydrogen plasma treatment on polycrystalline silicon thin films', Appl. Phys. Lett., Vol. 66, p. 3013, 1995 https://doi.org/10.1063/1.113673
  11. C. P. Liu and H. G. Yang, 'Deposition temperature and thickness effects on the characteristics of DC-sputtered ZrNx films', Mater. Chem. Phys., Vol. 86, p. 370, 2004 https://doi.org/10.1016/j.matchemphys.2004.03.026