Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structural and electrical properties of the NiCr thin film resistors deposited at various temperatures on $SiO_2$/Si substrate

  • Phuong, Nguyen Mai (Department of Materials Science and Engineering, Chungnam National University) ;
  • Cuong, Nguyen Duy (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Dong-Jin (KMC technology) ;
  • Kang, Byoung-Don (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Chang-Soo (Korea Research Institute of Standards and Science) ;
  • Yoon, Soon-Gil (Department of Materials Science and Engineering, Chungnam National University)
  • Published : 2006.06.22
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Abstract

The 200 nm thick-NiCr films grew on $SiO_2$/Si substrates at various deposition temperatures by a dc magnetron co-sputtering technique were characterized for the variation of film texture. The resistivity of the films decreases with increasing deposition temperature and temperature coefficient of electrical resistance (TCR) varies from negative value to a positive one with increasing deposition temperature. The NiCr films deposited at $300^{\circ}C$ exhibit 4 ppm/K being near zero TCR, resulting in TCR suitable for $\pi$-type attenuator applications.

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