• 방사선산업학회지
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• 제8권3호
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• pp.141-146
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• 2014

Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a $^{63}Ni$ plating condition on the PN junction semiconductor needed for production of beta-voltaic battery. PN junction semiconductors with a Ni seed layer of 500 and $1000{\AA}$ were coated with Ni at current density from 10 to $50mA\;cm^{-2}$. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased. The results showed that the optimum surface shape was obtained at a current density of $10mA\;cm^{-2}$ in seed layer with thickness of $500{\AA}$, $20mA\;cm^{-2}$ of $1000{\AA}$. Also, pure Ni deposit was well coated on a PN junction semiconductor without any oxide forms. Using the line width of (111) in XRD peak, the average grain size of the Ni thick firm was measured. The results showed that the average grain size was increased as the thickness of seed layer was increased.

• 열처리공학회지
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• 제29권5호
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• pp.216-219
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• 2016

$SnO_2$ single layer films (100 nm thick) and 2 nm thick Ni intermediated $SnO_2$ films were deposited on glass substrate by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni interlayer on the electrical and optical properties of the films were investigated. As deposited $SnO_2$ single layer films show the optical transmittance of 82.6% in the visible wavelength region and a resistivity of $6.6{ \times}10^{-3}{\Omega}cm$, while $SnO_2/Ni/SnO_2$ trilayer films show a lower resistivity of $2.7{ \times}10^{-3}{\Omega}cm$ and an optical transmittance of 76.3% in this study. Based on the figure of merit, it can be concluded that the intermediate Ni thin film effectively enhances the opto-electrical performance of $SnO_2$ films for use as transparent conducting oxides in flexible display applications.

• 대한전자공학회논문지SD
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• 제44권2호
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• pp.1-6
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• 2007

본 연구에서는 모양으로 유도된 자기 이방성을 가진 $Ni_{80}Fe_{20}/SiO_2$ laminates 다층막의 자기적 성질을 조사 하였다. 다층막은 rf 다이오드 스퍼터링 시스템을 이용하여 개개의 $Ni_{80}Fe_{20} 와 $SiO_2$ (at%) 합금 타겟들로부터 Si 또는 upilex 기판에 적층하였다. 여러 가지 개수(N)의 이중층으로 구성된 $Ni_{80}Fe_{20}/SiO_2$ laminates 가 적층되었다. 사진식각기술을 사용하여 타원형 어레이 패턴을 가진 $Ni_{80}Fe_{20}/SiO_2$ laminates 가 제작 되었다. 자기적 성질은 B-H 히스테리시스 그래프와 고주파 permeameter를 사용하여 상온에서 측정 되었다. 다층막에서 도메인 reversal 시 발견된 몇 개의 스텝들은 자성체 박막 사이에 존재하는 coupling 때문으로 사료된다. 내재하는 intrinsic 일축 자기 이방성 field는 N이 증가하면 증가한다. 전체 자기 이방성 field의 실험값은 계산된 값과 잘 일치 하였다. 본 연구에서는 소형의 타원형 어레이를 가진 다층막의 laminate 구조체를 이용하여 더 큰 일축 자기 이방성을 유도하고 그 결과 laminate의 동작 주파수를 극대화시키고자 하였다.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.133-138
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• 2013

Acrylonitrile-butadiene-styrene (ABS) plastic is a polymer material extensively used in electrical and electronic applications. Nickel (Ni) thin film was deposited on ABS by electroless plating, after its surface was treated and modified with atmospheric plasma generated by means of dielectric barrier discharges (DBDs) in air. The method in this study was developed as a pre-treatment for electroless plating using DBDs, and is a dry process featuring fewer processing steps and more environmentally friendliness than the chemical method. After ABS surfaces were modified, surface morphologies were observed using a scanning electron microscope (SEM) to check for any physical changes of the surfaces. Cross-sectional SEM images were taken to observe the binding characteristics between metallic films and ABS after metal plating. According to the SEM images, the depths of ABS by plasma are shallow compared to those modified by chemically treatment. The static contact angles were measured with deionized (DI) water droplets on the modified surfaces in order to observe for any changes in chemical activities and wettability. The surfaces modified by plasma showed smaller contact angles, and their modified states lasted longer than those modified by chemical etching. Adhesion strengths were measured using 3M tape (3M 810D standard) and by 90° peel-off tests. The peel-off test revealed the stronger adhesion of the Ni films on the plasma-modified surfaces than on the chemically modified surfaces. Thermal shock test was performed by changing the temperature drastically to see if any detachment of Ni film from ABS would occur due to the differences in thermal expansion coefficients between them. Only for the plasma-treated samples showed no separation of the Ni films from the ABS surfaces in tests. The adhesion strengths of metallic films on the ABS processed by the method developed in this study are better than those of the chemically processed films.

• 전기학회논문지
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• 제65권12호
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• pp.2014-2018
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• 2016

Transparent, conductive electrode films, showing the particular characteristics of good conductivity and high transparency, are of considerable research interest because of their potential for use in opto-electronic applications, such as smart window, photovoltaic cells and flat panel displays. Multilayer transparent electrodes, having a much lower electrical resistance than widely-used transparent conducting oxide electrodes, were prepared by using RF/DC magnetron sputtering system. The multilayer structure consisted of three layers, [NiInZnO(NIZO)/Ag/NIZO]. The optical and electrical properties of the multilayered NIZO/Ag/NIZO structure were investigated in relation to the thickness of each layer. The optical and electrical characteristics of multilayer structures have been investigated as a function of the Ag and NIZO film thickness. High-quality transparent conductive films have been obtained, with sheet resistance of $9.8{\Omega}/sq$ for Ag film thickness of 8 nm. Also the multilayer films of inserted Ag 8 nm thickness showed a high optical transmittance above 93% in the visible range. The electrical and optical properties of the new multilayer films were mainly dependent on the thickness of Ag insertion layer.

• 한국표면공학회지
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• 제51권4호
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• pp.231-236
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• 2018

We report p-type electrical characteristics of the amorphous $La_2NiO_{4+{\delta}}$ thin films which were sputtered on the glass substrates using an RF sputtering system. As-deposited thin films at room temperature and $300^{\circ}C$ were amorphous in nature. Post-annealing of the thin film samples over $400^{\circ}C$ resulted in the nano-crystallization of the $La_2NiO_{4+{\delta}}$. The electrical properties of the films were much dependent on the oxygen partial pressure, temperature of the post-annealing and sputtering ambient. The as-deposited samples at room temperature show a hole concentration of $7.82{\times}10^{13}cm^{-3}$, and it could be increased as high as $3.51{\times}10^{22}cm^{-3}$ when the films were post-annealed in an oxygen atmosphere at $500^{\circ}C$. Such p-type conductivity behavior of the $La_2NiO_{4+{\delta}}$ films suggests that the amorphous and nano-crystallized $La_2NiO_{4+{\delta}}$ films have potential for the application as p-type semiconductive or conductive materials at low temperatures where material diffusion is limited.

• 한국표면공학회지
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• 제38권1호
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• pp.1-6
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• 2005

Ni-15at.% W coatings with film thicknesses of 20-40 ㎛ were electroplated on a steel substrate, and their oxidation behavior was investigated at 700 and 800℃ in air. For comparison, a pure Ni coating and a bulk Ni were also oxidized. The Ni-15at.%W coating displayed the worst oxidation resistance, due to the formation of less-protective NiO, Fe₂O₃, NiFe₂O₄ and NiWO₄. The corrosion behavior Ni-15at.%W coatings electroplated on a steel substrate was similarly investigated at 700 and 800℃ in the Ar-l%SO₂ atmosphere. For comparison, the uncoated steel substrate was also corrosion-tested in the Ar-l %SO₂ atmosphere. Severe scale spallation and the internal corrosion of the steel that occurred in the uncoated substrate were not observed in the coated specimen. However, it seemed that the Ni-15at.%W coating cannot be a potential candidate as a sulfidation-resistant coating, due to the formation of less-protective NiO, NiS, WO₃ and NiWO₄.

• 한국자기학회지
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• 제15권4호
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• pp.241-245
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• 2005

CoFeNi 합금은 HDD, MEMS 분야에서 head core 재료로 쓰이는 permalloy(FeNi)합금보다 뛰어난 우수한 자기적 특성을 가진 재료로써 최근 많이 연구되어지고 있다. CoFeNi 합금의 조성과 전기도금 시 전류조건에 따른 미세구조와 결정학적 특성이 자기 특성에 미치는 영향을 조사하였으며, 높은 포화자화와 낮은 보자력을 갖는 CoFeNi 삼원계 합금을 전기도금 방식으로 제조하는데 성공하였다. 포화자화 1.9 T, 보자력 0.16 A/m를 갖는 대표적인 CoFeNi film의 조성은 $Co_{30}\;Fe_{34}\;Ni_{36}(at\%)$이며, 미세결정립과 ffc-bcc 상의 혼재가 낮은 보자력을 갖는 요인임을 XRD, TEM의 결과로부터 확인 하였다.

• 한국재료학회지
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• 제3권1호
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• pp.28-32
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• 1993

Si기판상에 Ni 박막 저항체를 형성하여 hot wire anemometer형 흐름측정 소자를 제작하고 이의 특성을 평가하여 보안ㅆ다. 니켈 박박 저항체의 온도계수는 박막의 두께가 얇아짐에 따라 감소하였으며, 제작된 흐름센서의 감ㅁ도는 111.3${\mu}$W/(${\ell}$ pm$)^{1/2}$, 동적인 응답시간은 수 십초 정도로 평가되었다.

• 동력기계공학회지
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• 제10권3호
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• pp.51-57
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• 2006

The effect of grain size on corrosion resistance and high temperature oxidation behavior was studied in 22Cr-15Ni-5W super austenitic stainless steels for desulfurization equipment as a heat power station. In the high temperature oxidation test, oxidation rate was increased as the temperature increased from $600^{\circ}C\;to\;800^{\circ}C$. In vapor, oxidation rate was faster than that in air. Because the vapor was inhibited nucleation of $Cr_2O_3$ film. And the high temperature oxidation resistance at $600^{\circ}C{\sim}800^{\circ}C$ was excellent from all specimens and specimen of the smallest grain size was the most excellent. Because increasing of diffusion course through the grain-boundary was promoted nucleation and growth of $Cr_2O_3$ film. In the test temperature at $600^{\circ}C{\sim}800^{\circ}C$, Cr rich round particle oxide was formed in air, whereas Fe rich needle type oxide was developed in vapor.