Characteristics of Electroplated Ni Thick Film on the PN Junction Semiconductor for Beta-voltaic Battery

베타전지용 PN 접합 반도체 표면에 도금된 Ni 후막의 특성

Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a $^{63}Ni$ plating condition on the PN junction semiconductor needed for production of beta-voltaic battery. PN junction semiconductors with a Ni seed layer of 500 and $1000{\AA}$ were coated with Ni at current density from 10 to $50mA\;cm^{-2}$. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased. The results showed that the optimum surface shape was obtained at a current density of $10mA\;cm^{-2}$ in seed layer with thickness of $500{\AA}$, $20mA\;cm^{-2}$ of $1000{\AA}$. Also, pure Ni deposit was well coated on a PN junction semiconductor without any oxide forms. Using the line width of (111) in XRD peak, the average grain size of the Ni thick firm was measured. The results showed that the average grain size was increased as the thickness of seed layer was increased.