• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.70-74
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• 2017

To research the electrical properties of ZnS thin films with various annealing conditions, ZnS was prepared by RF magnetron sputtering system and annealed in a vacuum for 10 minutes. All films were analyzed by the XRD, PL and I-V measurement system. The XRD pattern of ZnS film annealed at $100^{\circ}C$ was shifted to lower 2 theta because of the formation of a depletion region at the interface between a substrate and ZnS thin film, and the capacitance was abruptly increased. However, the pattern of XRD of ZnS film annealed at $100^{\circ}C$ with a Schottky contact was showed the amorphous structure, and the current-voltage characteristics were non-linearly observed by the Schottky contact.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.20-24
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• 2015

This study was explained the correlation between the O 1s spectra and the crystallization of ITO thin films. The crystal structure of ITO thin films changed with various annealing temperatures and annealing methods such as atmosphere or vaccum conditions. The amorphous structure observed from XRD pattern showed the O 1s spectra with 531.2 eV, and the crystal structure of annealed ITO films analyzed by XRD pattern had the O 1s spectra of 529.8 eV as lower binding energy then the 531.2 eV. Oxygen in view of ITO films was related to the crystallization, and the ITO films annealed in an atmosphere pressure showed higher crystal structure than the ITO annealed in a vaccum. It was indicated that the amorphous structure had higher binding energy than the crystal structure analyzed by O 1s spectra of ITO films.

• Journal of the Mineralogical Society of Korea
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• v.5 no.1
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• pp.32-41
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• 1992

An XRD quantitative analytical method using calculated XRD patterns was discussed in this study, Deep-seabed sediments commonly contain smectite, illite, chlorite, and kaolinite, and XRD pattern of each clay mineral of appropriate chemical composition was simulated by using an XRD pattern calculation method. Theoretical peak intensities of specific reflections of four clay minerals (the 001 reflections of smectite and illite, the 004 reflection of chlorite, and the 002 reflection of kaolinite) were measured from calculated patterns, and MIF(mineral intensity factor)value of each phase was determined from the intensities of calculated patterns. The peak intensities obtaine from experimental XRD patterns of sediments were corrected using the MIF values so that the calibrated intensity values for the specimens are linearly proportional to the weight fraction of each phase, which is normalized to 100 wt%. The MIF method can provide accurate quantitaive results without the necessity of correcting the factors by the mass absorption coefficient of each phase. This method excludes the necessity of standard specimens having compositions that are similar to those of clay minerals in the sediment samples. Therefore, quantitaive analysis using XRD calculation method can be utilized for the specimens, for which the standard specimens are very difficult or impossible to obtain. this quantitative method can provide rapid, routine analysis results for a large number of samples which occur in similar geological environments.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.995-998
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• 2003

This paper reports the correlation between dielectric constant and degree of amorphism of the hybrid type Si-O-C thin films. Si-O-C thin films were deposited by high density plasma chemical vapor deposition using bistrimethyl- silylmethane(BTMSM, $H_{9}$C$_3$-Si-C $H_2$-Si-C$_3$ $H_{9}$) and oxygen precursors with various flow rate ratio. As-deposited film and annealed films at 40$0^{\circ}C$ were analyzed by XRD. The Si-O-C thin films were amorphous from XRD patterns. For quantitative analysis, the diffraction pattern of the samples was transformed to radial distribution function by Fourier analysis, and then compared with each other. The degree of amorphism of annealed films was higher than that of as-deposited ones. The dielectric constant varied in accordance with flow rate ratio of precursors. The lowest dielectric constant was obtained from the as-deposited film which has the highest degree of amorphism after annealing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.188-192
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• 2016

In this work, the SiC powders were synthesized through the carbonized matter from the mixture of silica powder and rice husks. The SiC powders, obtained from the carbothermal reduction reaction of silica and carbonized rice husks, were investigated by XRD patterns, XPS, FE-SEM and FE-TEM. In the XRD patterns, the specimens showed clearly very high strong peak of (111) plane near $35^{\circ}$ as well as weak (220) and (311) peak respectively at approximately $60^{\circ}$ and $72^{\circ}$. Under Ar atmosphere, the power synthesized from the mixture (in case of mixing ratio, 6 : 4) of carbonized rice husks and silica showed mainly cubic SiC crystalline phase showing relatively lower ratio of hexagonal phase without residual carbon in XRD pattern. In the TEM analysis, the specimen, synthesized from carbonized rice husks and silica with mixing ratio of 6 : 4 under Ar atmosphere, showed relatively fine particles under $5{\mu}m$ and a crystalline SiC phase of (100) diffraction pattern.

• Journal of Adhesion and Interface
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• v.6 no.2
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• pp.1-5
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• 2005

Single crystals of metallocene-catalyzed isotactic polypropylene (iPP) and/or syndiotactic PP (sPP) were prepared and preliminarily characterized. The crystallization was performed utilizing 0.1 % by weight concentrations of each PP in o-xylene in the range of temperature of $40{\sim}90^{\circ}C$. Following the XRD patterns, samples were ${\alpha}$-iPP and antichiral Cell III of sPP. The XRD pattern of iPP shows three ${\alpha}$-form peaks due to the (110), (040), (130) planes at $2{\theta}=14.2^{\circ}$, $17^{\circ}$, $18.8^{\circ}$, respectively. The XRD pattern of sPP is characterized by the presence of the (020) reflection at $16^{\circ}$. The melting point ($123^{\circ}C$ and $148^{\circ}C$, respectively) of the metallocene catalyzed iPP and sPP were generally lower than that of conventional PP ($160{\sim}170^{\circ}C$) due to the misinsertion of the monomer. When metallocene-catalyzed iPP samples were crystallized isothermally from solution grown at a lower temperature, lozenge shape single crystals were observed by transmission electron microscopy (TEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

• Journal of the Korean Society for Heat Treatment
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• v.31 no.5
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• pp.237-243
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• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

• Journal of Microbiology and Biotechnology
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• v.23 no.9
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• pp.1287-1292
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• 2013

Extracellular biogenic synthesis of silver nanoparticles with various shapes using the rice bacterial blight bacterium Xanthomonas oryzae pv. oryzae BXO8 is reported. The synthesized silver nanoparticles were characterized by UV-Vis spectroscopy, powder X-ray diffractometry (XRD), scanning electron microscopy, energy dispersive X-ray spectrometry, and high-resolution transmission electron microscopy (HR-TEM). Based on the evidence of HR-TEM, the synthesized particles were found to be spherical, with anisotropic structures such as triangles and rods, with an average size of 14.86 nm. The crystalline nature of silver nanoparticles was evident from the bright circular spots in the SAED pattern, clear lattice fringes in the high-resolution TEM images, and peaks in the XRD pattern. The FTIR spectrum showed that biomolecules containing amide and carboxylate groups are involved in the reduction and stabilization of the silver nanoparticles. Using such a biological method for the synthesis of silver nanoparticles is a simple, viable, cost-effective, and environmentally friendly process, which can be used in antimicrobial therapy.