• Korean Journal of Materials Research
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• v.11 no.3
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• pp.236-242
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• 2001

HfN/Si$_3$N$_4$and NbN/Si$_3$N$_4$ multilayer coatings were deposited onto a high speed tool steel substrate by reactive sputtering and their mechanical properties were evaluated in terms of the dependence of hardness and adhesion strength on the sputter deposition process parameters. The hardnesses of both HfN/Si$_3$N$_4$and NbN/Si$_3$N$_4$ multiplayer coatings increase up to the flux ratio of 0.4 but nearly do not change after that as the $N_2$/Ar flux ratio in nitride sputter deposition increases. The hardnesses of both multiplayer coatings nearly do not change with annealing at low temperatures but decrease owing to oxidation with annealing at a high temperature like 80$0^{\circ}C$ after depositing the layers by sputtering. Post-annealing at low temperatures increases the adhesion strength of the multilayers. but high temperature annealing is not desirable since it decreases the adhesion strength besides the hardness deterioration.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.221-224
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• 2000

We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO$_{3}$/SiN/Si structure. The SiN thin films were made into metal -insulator- semiconductor (MIS) devices by thermal evaporation of aluminum source in a dot away on the surface. The interface property of MFIS from 1MHz & quasistatic C-V is good and the memory window width is about 1.5V at 0.2V/s signal voltage sweep rate. The gate leakage current density of MFIS capacitors using a aluminum electrode showed the least value of 1x10$^{-8}$ A/$\textrm{cm}^2$ order at the electric field of 300㎸/cm. And the XRD patterns shows the probability of applications of LN for MFIS devices for FeRAMs on amorphous SiN buffer layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.9-12
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• 2015

NbN thin films were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. Total sputtering gas pressure was fixed while varying $N_2$ flow rate from 1.4 sccm to 2.9 sccm. X-ray diffraction pattern analysis revealed dominant NbN(200) orientation in the low $N_2$ flow rate but emerging of (111) orientation with diminishing (200) orientation at higher flow rate. The dependences of the superconducting properties on the $N_2$ gas flow rate were investigated. All the NbN thin films showed a small negative temperature coefficient of resistance with resistivity ratio between 300 K and 20 K in the range from 0.98 to 0.89 as the $N_2$ flow rate is increased. Transition temperature showed non-monotonic dependence on $N_2$ flow rate reaching as high as 11.12 K determined by the mid-point temperature of the transition with transition width of 0.3 K. On the other hand, the upper critical field showed roughly linear increase with $N_2$ flow rate up to 2.7 sccm. The highest upper critical field extrapolated to 0 K was 17.4 T with corresponding coherence length of 4.3 nm. Our results are discussed with the granular nature of NbN thin films.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.131-139
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• 1993

Abstract Alloying elements such as AI, Ti, Nb and B in the extra low carbon AI-killed steel precipitate as nitrides or carbides and change the recrystallization texture structure of the steel during heattreatment with the result of strong effects on the deep drawability of the steel sheet. In this study the effects of fine precipitates such as nitrides and carbides on the texture of extra low carbon steels into which Ti, Nb, B, P, Si and Mn were added as alloying elements were investigated by means of TEM, SEM and optical microscopic analyses. Fine N$b_2$C and T$i_2$AIN precipitates are mainly observed in the steel containing both Nb and Ti, while fine AIN and coarse BN precipitates are observed in the Nb~containing steel and coarse T${i_4}{N_3}$ and ${N_10}{N_22}$/T$i_68$ precipitates are observed in the Ti-containing steel. The grain size of the Ti containing steel is larger than that of the Nb containing steel and that of the one containing both Nb and Ti.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.94-98
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• 2000

Polycrystalline SBTN ferroelectric thin films were prepared by sol-gel method with various Nb mole ratios on Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperatures and characterized in terms of phase and microstructure. Relatively a well saturated hysteresis pattern was obtained at x =0.2 in S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin films. At an applied voltage of 5V, the dielectric constant ($\varepsilon$$_{r}$) and dissipation factor (tan $\delta$) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin film (x=0.2) were about 236.2 and 0.034. Measured remanent polarization (2Pr) and coercive field (Ec) were 4.28C/c $m_2$, and 38.88kv/cm respectively. No fatigue was observed up to 6$\times$10$_{10}$ switching cycles at 5V and the normalized polarization reduced by a factor of only 4%.%. 4%.%. 4%.%.%.%.%.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.245-251
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• 2017

Niobium doped zirconium oxide (Nb-Zr-O:NZO) thin films were fabricated on Si substrates by a sol-gel technique with an annealing temperatures of $500{\sim}1000^{\circ}C$ in air ($N_2:O_2=3:1$) for 20 minutes. It was found that the NZO film is based on tetragonal $ZrO_2$ polycrystalline structure with the Nb 5+ ion state and there is almost no diffusion of Nb or Zr to Si substrate. The relative dielectric constant for the NZO film with the Nb composition of 30 mol% and annealed at $800^{\circ}C$ was around 40. The root mean roughness was 1.02 nm. In addition, the leakage current of NZO films was as low as $10^{-6}A/cm^2$ at 4.4 V.

• Journal of Welding and Joining
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• v.16 no.1
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• pp.88-97
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• 1998

The surface characteristics of 13Cr stainless steel systems by plasma nitriding were investigated. The plasma nitriding for the 13Cr steels, in which the nitriding forming elements such as Ti, V, W, Nb, Al, Zr and Si were added about 2~3wt.%, respectively, was performed. In all nitrided specimens, .epsilon.-F $e_{2-3}$N, UPSILON.'-F $e_{4}$N and CrN were detected as the nitrides with the a-Fe in the nitrided layer. VN and .betha.- $W_{2}$N were also detected in 13Cr-3V and 13Cr-3W alloys. The growth of the nitrided layer was controlled by the diffusion process. The thickness of the nitrided layer was similar in the 13Cr-2Nb and 3Zr specimens to that of 13Cr(BM) specimen, while the others exhibited the thinner layer. The activation energy for the growth of the nitrided layer in the temperature range of 773-873K was about 130kJ/mol in 13Cr(BM), 13Cr-2Ti, 3W, 3Al, 3Zr and 3Si alloys. The hardness of the nitrided specimens was significantly increased above Hv1000, comparing to the non-nitrided specimen. The specimens with the nitrided forming elements revealed much higher hardness values and, especially, 13Cr-3Al, 3V and 3Si specimens were significantly hardened up to Hv1300.v1300.0.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.24-27
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• 2000

Ferroelectric P $b_{0.99}$〔(Z $r_{0.6}$S $n_{0.4}$)$_{0.9}$ $Ti_{0.1}$〕$_{0.98}$N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on (L $a_{0.5}$S $r_{0.5}$)Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole％. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ were crystallized to a perovskite phase after rapid thermal annealing(RTA) The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 ％.0 ％.％.0 ％.0 ％.