• 한국항행학회논문지
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• 제17권6호
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• pp.700-704
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• 2013

양자 셀룰라 오토마타(QCA)는 CMOS의 기술을 상속받을 차세대 나노 전자 소자 중 하나이다. QCA는 원자규모 및 초저전력화로 이목이 집중되고 있으며 다양한 QCA 회로들이 제안되었다. 십진 출력을 요하는 전자회로와 마이크로프로세서에서 주로 사용되는 이진화 십진법(BCD)은 연산을 위한 변환은 편하지만 데이터 낭비가 심하다. 본 논문에서는 QCA 회로에서 감산 및 반올림에 효과적으로 이용될 수 있는 BCD-3초과 코드를 제안한다. 제안된 구조는 잡음을 최소화하고 공간 및 시간 복잡도를 고려하여 효율적으로 설계되었으며 시뮬레이션을 통해 검증하였다.

• Journal of Electrical Engineering and Technology
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• 제11권5호
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• pp.1367-1371
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• 2016

• 한국정밀공학회지
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• 제24권1호
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• pp.64-70
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• 2007

A long-exposing technique (LET) has been conducted to create nanoscale patterns applicable to diverse micro-devices using two-photon polymerization (TPP). By the weakly-polymerized region via the LET, double-layered embossing patterns can be fabricated simply in a single step. The LET makes possible a voxel and its surrounding to be fully grown into more than 500 nm in lateral size and weakly-polymerized region (WPR), respectively. In the WPR. interconnecting ribs between voxels are generated, and they lead to the creation of double-layered dot patterns. Moreover, by controlling the distance between voxels, various shapes of interconnecting rib can be fabricated when the LET is applied. Various embossing patterns were fabricated to evaluate the usefulness of the proposed technique as a novel nanopatterning technique in TPP.

• 한국분말재료학회지
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• 제27권2호
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• pp.154-163
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• 2020

Fluorescent nanoparticles are characterized by their unique properties such as luminescence, optical transparency, and sensitivity to various chemical environments. For example, semiconductor nanocrystals (quantum dots), which are nanophosphors doped with transition metal or rare earth ions, can be classified as fluorescent nanoparticles. Tuning their optical and physico-chemical properties can be carried out by considering and taking advantage of nanoscale effects. For instance, quantum confinement causes a much higher fluorescence with nanoparticles than with their bulk counterparts. Recently, various types of fluorescent nanoparticles have been synthesized to extend their applications to other fields. In this study, State-of-the-art fluorescent nanoparticles are reviewed with emphasis on their analytical and anti-counterfeiting applications and synthesis processes. Moreover, the fundamental principles behind the exceptional properties of fluorescent nanoparticles are discussed.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.967-972
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• 2004

The role of transfer films formed during sliding of polymer composites against steel counterfaces was studied in terms of the tribological behaviors of composites. Four kinds of composites were included in this study: (1) unfilled PPS, (2) PPS+2%CuO, (3) PPS+2%CuO+5% carbon fiber (CF), and (4) PPS+2%CuO+15%Kevlar. The filler material CuO was in nanoscale particulate form and the reinforcing material was in the form of short fibers. The composites were prepared by compression molding at $310^{\circ}C$ and sliding tests were run in the pin-on-disk sliding configuration. The counterface was made of tool steel hardened to 55-60 HRC and finished to a surface roughness of 0.09-0.10 ${\mu}m$ Ra. Wear tests were run for 6 hrs at the sliding speed of 1 m/s and contact pressure of 0.65 MPa. Transfer films formed on the counterfaces during sliding were investigated using AFM and SEM. The results showed that as the transfer film became smooth and uniform, wear rate decreased. PPS+2%CuO+15%Kevlar composite showed the lowest steady state wear rate in this study and its transfer film showed the smoothest and the most uniform characteristics. The examination of worn surfaces of PPS+2%CuO composite using X-ray area scanning (dot mapping) showed back-transfer of steel counterface material to the polymer pin surface. This behavior is believed to strengthen the polymer pin surface during sliding thereby contributing to the decrease in wear rate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.9-10
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• 2005

We report on the fabrication and characterization of self- and artificially-controlled ZnO nanostructures have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanostructures on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing metalorganic chemical vapor deposition (MOCVD) in addition with a focused ion beam (FIB) technique. Widely well-aligned two-dimensional ZnO nanodot arrays ($4{\sim}10^4$ nanodots of 130-nm diameter and 9-nm height over $150{\sim}150{\mu}m^2$ with a period of 750 nm) have been realized by MOCVD on $SiO_2/Si$ substrates patterned by FIB. A low-magnification FIB nanopatterning mode allowed the periodical nanopatterning of the substrates over a large area in a short processing time. Ga atoms incorporated into the surface areas of FIB-patterned nanoholes during FIB engraving were found to play an important role in the artificial control of ZnO, resulting in the production of ZnO nanodot arrays on the FIB-nanopatterned areas. The nanodots evolved into dot clusters and rods with increasing MOCVD growth time.

• 마이크로전자및패키징학회지
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• 제26권2호
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• pp.9-14
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• 2019

The newly discovered properties of periodic nanoscale patterns have increasingly sparked research interests in various fields. Along this direction, it is worth mentioning that there had been rare studies conducted on interference exposure, a method of creating periodic patterns. Additionally, these few studies seemed to validate the existence of only exact quadrangle shapes and dot patterns. This study asserted the formation of wavy patterns associated to using multiple exposures of the ratio of the first exposure intensity to the second exposure intensity. Such patterns were designed and constructed herein via overlapping of two Gaussian beams relative to certain rotation angles, and with a submicron structure fabricated based on a 360-nm continuous-wave laser. Results confirmed that the proposed double exposure laser interference lithography is able to create circular, elliptical and wavy patterns with no need for complex optical components.

• 전기화학회지
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• 제18권1호
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• pp.38-44
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• 2015

본 총설은 다공성의 메조포러스 이산화티타늄 박막을 기반으로 하는 양자점-감응 태양 전지의 최근 발전 과정에 대해 정리하였다. 나노스케일의 무기물 양자점이 가지는 본질적 특성에 기반하고 다양한 양자점 구성 물질을 이용하여, 용액-공정 기반의 다양한 3세대 박막 태양전지를 만들 수 있었다. 양자점 감응제는 준비하는 방법에 따라 크게 2가지로 나눌 수 있는데, 첫 번째는 콜로이드 형태로 용액상에서 준비한 다음 $TiO_2$ 표면에 붙이는 것이고 두 번째는 양자점 전구체가 녹아있는 화학조를 이용하여 직접 $TiO_2$ 표면에 성장시키는 것이다. 폴리썰파이드 전해질을 사용하여, 콜로이드 양자점 감응제의 경우는 최근 들어 정밀한 조성 조절을 통하여 전체 광전 변환효율이 ~7%에 이르렀고 화학조 침전법을 이용하여 준비된 대표적 감응제인 CdS/CdSe는 ~5%의 효율을 보이고 있다. 앞으로는 지금까지 보고된 양자점 감응제의 뛰어난 광전류 생성 능력을 유지하면서, 새로운 정공 전달체의 개발 및 계면 조절을 통한 개방 전압과 채움 상수의 개선을 통한 효율 증가 및 안정성에 관한 체계적 연구가 필요한 상황이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.

• 전자공학회논문지D
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• 제36D권10호
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• pp.23-30
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• 1999

본 논문에서는 전자선 직접 묘화 시스템을 이용하여 50 nm 이하의 패턴 폭을 가지는 패터닝 결과를 얻기 위한 실험을 수행하였다. SAL601 negative E-beam PR(Photo Resist)를 이용하여 실험을 진행하였고, E-beam 장비의 특성을 최대로 이용하기 위해서 PR의 두께를 100nm로 줄이고, field 크기를 200 ${um}m$로 줄여 실험하였으며, 또한 SAL601 PR의 경우 작은 선폭을 얻기 위해 중요한 요인 중에 하나인 PEB (Post Expose Bake) 온도와 시간을 줄이면서 실험을 진행하였다. 여기에 디지타이징 방식의 최적화를 통하여 50 nm 이하의 패턴 폭을 가지는 단선 패터닝 결과를 얻었다. 이 공정을 이용하여 단전자 메모리 소자에 응용 가능한 50 nm 급의 silicon 양자선과 silicon 양자점을 제작하였다. 이는 현재 많이 연구되고 있는 단전자 기억소자 및 국소 채널 MOS소자 제작에 유용할 것이다.