• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.922-925
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• 2012

Single crystalline Au nanowires were successfully synthesized in a tube-type furnace. The Au nanowires were grown by vapor phase synthesis technique using solid-liquid-solid (SLS) mechanism on substrates of corning glass and Si wafer. Prior to Au nanowire synthesis, Au thin film served as both catalyst and source for Au nanowire was prepared by sputtering process. Average length of the grown Au nanowires was approximately 1 ${\mu}m$ on both the corning glass and Si wafer substrates, while the diameter and the density of which were dependent on the thickness of the Au thin film. To induce a super-saturated states for the Au particle catalyst and Au molecules during the Au nanowire synthesis, thickness of the Au catalyst thin film was fixed to 10 nm or 20 nm. Additionally, synthesis of the Au nanowires was carried out without introducing carrier gas in the tube furnace, and synthesis temperature was varied to investigate the temperature effect on the resulting Au nanowire characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.837-840
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• 2014

Novel materials of $Zn(HPB)_2$ and Ir-complexes were respectively synthesized as blue or red emitting material. White Organic Light Emitting Diodes (OLED) were fabricated by using $Zn(HPB)_2$ for a blue emitting layer, Ir-complexes for a red emitting layer and $Alq_3$ for a green emitting layer. White OLED was fabricated by using double emitting layers of $Zn(HPB)_2$ and $Alq_3:Ir$-complexes, and hole blocking layer of BCP. We also varied the thickness of BCP. When the thickness of BCP layer was 5 nm, white emission was achieved. We obtained a maximum luminance of $3,500cd/m^2$. The CIE coordinates was (0.375, 0.331). From this study, we could propose that the hybrid structure is efficient in lighting application of white OLED by improvement of color purity.

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.465-472
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• 2005

Preparation of copper film on PET substrate was carried out by cyclic operation of RF-magnetron­sputtering under continuous operation of ECR-CVD. The purpose of this study is aimed to an increase in deposition rate with keeping excellent adhesion between copper film and PET. In order to optimize the sputtering time under continuous ECR-CVD, cyclic operation concept is employed. By changing parameters of cyclic operation such as split of e and cycle time of A, the characteristics and thickness of the deposited copper film are controlled. As $\theta$ value increase, film thickness could confirm to increase and its surface resistivity value decreases. The highest adhesive strength appears at $\theta=0.33$ and cycle time of 30 min. The uniformity of copper film shows $5\%$ in our experimental range.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.3
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• pp.541-546
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• 2008

In this paper, conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper are compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gate oxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according doping concentration.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.456-460
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• 2011

Recently, the size of currently-researched components and devices reduces nano-scale. Thus, it is important and emphasizes the analyses of physical properties in nano scale. Especially, the mechanical properties are not over micro-scale components but nano-scale components with different characteristics that has been reported. However, most analytical methods for currently studying in nano-scale are related to spectroscopy and electronics, affected the limitation of viewing size that these methods give only average information. In this research, the representative nanotribology analyses, nano-indenter study the physical and mechanical properties of W-N thin film for nano region and nano depth within nano-scale that the thickness of W-N diffusion barrier has less than tens of nanometers. The Scanning probe microscopy (SPM) study the surface image. From these results, the hardness of W-N thin film underneath the nano-surface decreased from 57.67 GPa to 9.1 GPa according to the increase of nitrogen gas flow. The elastic modulus of W-N thin film underneath the nano-surface also decreased from 575.53 GPa to 178.1 GPa.

• Journal of the Korean Vacuum Society
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• v.19 no.6
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• pp.483-488
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• 2010

ZnO nano-fibrous thin films with various precursor concentrations ranging from 0.2 to 1.0 mol (M) were grown by spin-coating method and effects of the precursor concentration on surface and optical properties of the ZnO nano-ribrous thin films were investigated by using scanning electron microscopy (SEM) and photoluminescence (PL). ZnO nuclei were formed at the precursor concentration below 0.4 M and the ZnO nano-fibrous thin films were grown at the precursor concentration above 0.6 M. Further increase in the precursor concentration, the thickness of the ZnO nano-fibrous thin films is gradually increased. The intensity and the full-width at half-maximum (FWHM) of the near-band-edge emission (NBE) is increased as the precursor concentration is increased. The deep-level emission (DLE) is red-shifted as the precursor concentration is increased.

• Bulletin of the Korean Chemical Society
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• v.27 no.10
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• pp.1562-1566
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• 2006

Mesoporous silica films with three different pore sizes were prepared by using cationic surfactant, non-ionic surfactant, or triblock copolymer as structure directing agents with tetramethylorthosilicate as silica source in order to control the pore size and wall thickness. They were synthesized by an evaporation-induced self-assembly process and spin-coated on Si wafer. Mesoporous silica films with three different pore sizes of 2.9, 4.6, and 6.6 nm and wall thickness ranging from $\sim$1 to $\sim$3 nm were prepared by using three different surfactants. These materials were optically transparent mesoporous silica films and crack free when thickness was less than 1 m m. The photoluminescence spectra found in the visible range were peaked at higher energy for smaller pore and thinner wall sized materials, consistent with the quantum confinement effect within the nano-sized walls of the silica pores.

• Advances in materials Research
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• v.7 no.1
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• pp.1-16
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• 2018

Thermal bifurcation buckling behavior of fully clamped Euler-Bernoulli nanobeam built of a through thickness functionally graded material is explored for the first time in the present paper. The variation of material properties of the FG nanobeam are graded along the thickness by a power-law form. Temperature dependency of the material constituents is also taken into consideration. Eringen's nonlocal elasticity model is employed to define the small-scale effects and long-range connections between the particles. The stability equations of the thermally induced FG nanobeam are derived via the principal of the minimum total potential energy and solved analytically for clamped boundary conditions, which lead for more accurate results. Moreover, the obtained buckling loads of FG nanobeam are validated with those existing works. Parametric studies are performed to examine the influences of various parameters such as power-law exponent, small scale effects and beam thickness on the critical thermal buckling load of the temperature-dependent FG nanobeams.

• Transactions of Materials Processing
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• v.18 no.8
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• pp.616-624
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• 2009

In this work we demonstrate the hot-embossing process under different forming conditions such as forming temperature, load, and holding time in pressing, in order to determine the suitable conditions required for linear patterning on polymer plates (PC). Results showed that the replicated pattern depth increased in proportion to an increase in the forming temperature, load, and time. The reduction of the workpiece thickness increased according to the holding time in the pressing process. In the process of time, the reduction ratio of the workpiece thickness decreased due to the surface area increment of the workpiece, while the pressure on the workpiece declined. In order to reduce the bulging ratio we introduced a temperature difference between the upper and the lower punch.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.345-346
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• 2013

InGaN material is being studied increasingly as a prospective material for solar cells. One of the merits for solar cell applications is that the band gap energy can be engineered from 0.7 eV for InN to 3.4 eV for GaN by varying of indium composition, which covers almost of solar spectrum from UV to IR. It is essential for better cell efficiency to improve not only the crystalline quality of the epitaxial layers but also fabrication of the solar cells. Fabrication includes transparent top electrodes and surface texturing which will improve the carrier extraction. Surface texturing is one of the most employed methods to enhance the extraction efficiency in LED fabrication and can be formed on a p-GaN surface, on an N-face of GaN, and even on an indium tin oxide (ITO) layer. Surface texturing method has also been adopted in InGaN-based solar cells and proved to enhance the efficiency. Since the texturing by direct etching of p-GaN, however, was known to induce the damage and result in degraded electrical properties, texturing has been studied widely on ITO layers. However, it is important to optimize the ITO thickness in Solar Cells applications since the reflectance is fluctuated by ITO thickness variation resulting in reduced light extraction at target wavelength. ITO texturing made by wet etching or dry etching was also revealed to increased series resistance in ITO film. In this work, we report a new way of texturing by deposition of thickness-optimized ITO films on ITO nano dots, which can further reduce the reflectance as well as electrical degradation originated from the ITO etching process.