• Title/Summary/Keyword: Nano-Plasma

Search Result 641, Processing Time 0.033 seconds

Dry Etching Characteristics of Indium Zinc Oxide Thin Films in Adaptive Coupled Plasma

  • Woo, Jong-Chang;Choi, Chang-Auck;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
    • /
    • v.14 no.4
    • /
    • pp.216-220
    • /
    • 2013
  • The etching characteristics of indium zinc oxide (IZO) in $Cl_2/Ar$ plasma were investigated, including the etch rate and selectivity of IZO. The IZO etch rate showed non-monotonic behavior with increasing $Cl_2$ fraction in the $Cl_2/Ar$ plasma, and with increasing source power, bias power, and process pressure. In the $Cl_2/Ar$ (75:25%) gas mixture, a maximum IZO etch rate of 87.6 nm/min and etch selectivity of 1.09 for IZO to $SiO_2$ were obtained. Owing to the relatively low volatility of the by-products formation, ion bombardment was required, in addition to physical sputtering, to obtain high IZO etch rates. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. These data suggested that the IZO etch mechanism was ion-enhanced chemical etching.

Correlation of Sintering Parameters with Density and Hardness of Nano-sized Titanium Nitride reinforced Titanium Alloys using Neural Networks

  • Maurya, A.K.;Narayana, P.L;Kim, Hong In;Reddy, N.S.
    • Journal of Powder Materials
    • /
    • v.27 no.5
    • /
    • pp.365-372
    • /
    • 2020
  • Predicting the quality of materials after they are subjected to plasma sintering is a challenging task because of the non-linear relationships between the process variables and mechanical properties. Furthermore, the variables governing the sintering process affect the microstructure and the mechanical properties of the final product. Therefore, an artificial neural network modeling was carried out to correlate the parameters of the spark plasma sintering process with the densification and hardness values of Ti-6Al-4V alloys dispersed with nano-sized TiN particles. The relative density (%), effective density (g/㎤), and hardness (HV) were estimated as functions of sintering temperature (℃), time (min), and composition (change in % TiN). A total of 20 datasets were collected from the open literature to develop the model. The high-level accuracy in model predictions (>80%) discloses the complex relationships among the sintering process variables, product quality, and mechanical performance. Further, the effect of sintering temperature, time, and TiN percentage on the density and hardness values were quantitatively estimated with the help of the developed model.

The Fabrication of an Applicative Device for Trench Width and Depth Using Inductively Coupled Plasma and the Bulk Silicon Etching Process

  • Woo, Jong-Chang;Choi, Chang-Auck;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
    • /
    • v.15 no.1
    • /
    • pp.49-54
    • /
    • 2014
  • In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

Effect of the Mg Ion Containing Oxide Films on the Biocompatibility of Plasma Electrolytic Oxidized Ti-6Al-4V

  • Lee, Kang;Choe, Han-Cheol
    • Journal of the Korean institute of surface engineering
    • /
    • v.49 no.2
    • /
    • pp.135-140
    • /
    • 2016
  • In this study, we prepared magnesium ion containing oxide films formed on the Ti-6Al-4V using plasma electrolytic oxidation (PEO) treatment. Ti-6Al-4V surface was treated using PEO in Mg containing electrolytes at 270V for 5 min. The phase, composition and morphology of the Mg ion containing oxide films were evaluated with X-ray diffraction (XRD), Attenuated total reflectance Fourier transform infrared (ATR-FTIR) and filed-emission scanning electron microscopy (FE-SEM) with energy dispersive X-ray spectrometer (EDS). The biocompatibility of Mg ion containing oxide films was evaluated by immersing in simulated body fluid (SBF). According to surface properties of PEO films, the optimum condition was formed when the applied was 270 V. The PEO films formed in the condition contained the properties of porosity, anatase phase, and near 1.7 Ca(Mg)/P ratio in the oxide film. Our experimental results demonstrate that Mg ion containing oxide promotes bone like apatite nucleation and growth from SBF. The phase and morphologies of bone like apatite were influenced by the Mg ion concentration.

The Dry Etching of TiN Thin Films Using Inductively Coupled CF4/Ar Plasma

  • Woo, Jong-Chang;Choi, Chang-Auck;Joo, Young-Hee;Kim, Han-Soo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
    • /
    • v.14 no.2
    • /
    • pp.67-70
    • /
    • 2013
  • In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.

Feasibility Study of Communication Access via Iridium Constellation for Small-Scale Magnetospheric Ionospheric Plasma Experiment Mission

  • Song, Hosub;Lee, Jaejin;Yi, Yu
    • Journal of Astronomy and Space Sciences
    • /
    • v.39 no.3
    • /
    • pp.109-116
    • /
    • 2022
  • The small-scale magnetospheric and ionospheric plasma experiment (SNIPE) is a mission initiated by the Korea Astronomy and Space Science Institute (KASI) in 2017 and comprises four 6U-sized nano-satellites (Korea Astronomy and Space Science Institute Satellite-1, KASISat-1) flying in formations. The main goal of the SNIPE mission is to investigate the space environment in low Earth orbit at 500-km. Because Iridium & GPS Board (IGB) is installed on the KASISat-1, a communication simulation is required to analyze the contact number and the duration. In this study, communication simulations between the Iridium satellite network and KASISat-1 are performed using STK Pro (System Tool Kit Pro Ver 11.2) from the AGI (Analytical Graphics, Inc.). The contact number and durations were analyzed by each orbit and date. The analysis shows that the average access number per day is 38.714 times, with an average of 2.533 times per orbit for a week. Furthermore, on average, the Iridium satellite communication is linked for 70.597 min daily. Moreover, 4.625 min is the average duration of an individual orbit.

Low Temperature Debinding Process Using Oxygen Plasma for Flexible Printed Electronics

  • Lee, Young-In
    • Journal of Powder Materials
    • /
    • v.19 no.5
    • /
    • pp.343-347
    • /
    • 2012
  • In this study, an oxygen plasma treatment was used as a low temperature debinding method to form a conductive copper feature on a flexible substrate using a direct printing process. To demonstrate this concept, conductive copper patterns were formed on polyimide films using a copper nanoparticle-based paste with polymeric binders and dispersing agents and a screen printing method. Thermal and oxygen plasma treatments were utilized to remove the polymeric vehicle before a sintering of copper nanoparticles. The effect of the debinding methods on the phase, microstructure and electrical conductivity of the screen-printed patterns was systematically investigated by FE-SEM, TGA, XRD and four-point probe analysis. The patterns formed using oxygen plasma debinding showed the well-developed microstructure and the superior electrical conductivity compared with those of using thermal debinding.

Plasma treatment on PMMA, PET & ABS for Superhydrophobicity (플라즈마 처리에 의한 PMMA, PET, ABS의 초발수 효과)

  • Choi, Gyoung-Rin;Noh, Jung-Hyun;Lee, Jun-Hee;Kim, Wan-Doo;Lim, Hyun-Eui
    • Proceedings of the KSME Conference
    • /
    • 2008.11a
    • /
    • pp.1582-1584
    • /
    • 2008
  • This paper reports a simple fabrication method for creating the superhydrophobic polymer surface using a plasma etching. Generally, it is necessary for the superhydrophobic surfaces to have a rough structure on surface with the composition of the low surface energy. In this study, Poly(methyl methacrylate) (PMMA), poly(ethylene terephthalate) (PET), acrylonitrile butadiene styrene (ABS) with superhydrophobic surface were fabricated using $O_2$ plasma etching and vapor deposition with the fluoroalkylsilane self-assembled monolayers. The plasma treated polymer surfaces are covered with the nano-pillar shaped structures after treatment for $1{\sim}2min$. And these samples with FOTS SAMs coating are showed the superhydrophobicity having the water contact angle of around $150^{\circ}$ and sometimes around $180^{\circ}$ depending on the treatment time. Furthermore the nanostructured polymer is transparent for the visible light.

  • PDF

An Experimental Study on Effect of Adding $C_2H_4$ for Reduction of NOX using Low Temperature Plasma Apparatus (저온 플라즈마 장치에서 $C_2H_4$의 첨가량이 NOx 저감에 미치는 영향에 대한 실험적 연구)

  • 권준호;강우정;정태용
    • Transactions of the Korean Society of Automotive Engineers
    • /
    • v.6 no.4
    • /
    • pp.211-218
    • /
    • 1998
  • The purpose of this study is to investigate the reduction rate of NOX according to several parameters(NOX concentration, the flow rate of gas, the additional amount of C2H4, input voltage, input frequency and so in) when NOX is reduced by using PPCP(Pulse-induced Plasma Chemical Process). PPCP is based on the plasma-chemical technology, which induces narrow voltage pulses to binary electrode structure.

  • PDF

Nanostructure Ceramics of Silicon Nitride Produced by Spark Plasma Sintering

  • Hojo, Junichi;Hotta, Mikinori
    • Proceedings of the Korean Powder Metallurgy Institute Conference
    • /
    • 2006.09a
    • /
    • pp.323-324
    • /
    • 2006
  • The nanostructure control of $Si_3N_4$ ceramics can be achieved by using fine starting powder and retardation of grain growth. The spark plasma sintering technique is useful to retard the grain growth by rapid heating. In the present work, the change of microstructure was investigated with emphasis on the particle size of starting powder, the amount of sintering additive and the heating schedule. The rapid heating by spark plasma sintering gave the fine microstructure consisting of equiaxed grains with the same size as starting particles. The spark plasma sintering of $Si_3N_4$ fine powder was effective to control the microstrucutre on nano-meter level.

  • PDF