• Title/Summary/Keyword: Nano Science

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Synthesis and Optoelectronic Characteristics of Single-crystalline Si Nanowires

  • Kim, Kyung-Hwan;Keem, Ki-Hyun;Kang, Jeong-Min;Yoon, Chang-Joon;Jeong, Dong-Young;Min, Byung-Don;Cho, Kyoung-Ah;Kim, Hyun-Suk;Kim, Sang-Sig
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.5
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    • pp.198-201
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    • 2005
  • Photocurrent of a single-crystalline Si nanowire is investigated in this paper. Single-crystalline Si nanowires with amorphous $SiO_2$ shells were first synthesized from ball-milled SiO powders by thermal chemical vapor deposition, and then the amorphous $SiO_2$ shells were etched out from the as-synthesized Si nanowires. For a single-crystalline Si nanowire, photocurrent-voltage curves taken in air at room temperature were non-linear, and rapid photoresponses were observed when the light was switched on and off. The photocurrent was not changed in intensity under the illumination. Photocurrent mechanism in the single-crystalline Si nanowire is discussed in this paper.

Nonvolatile Memory Characteristics of Double-Stacked Si Nanocluster Floating Gate Transistor

  • Kim, Eun-Kyeom;Kim, Kyong-Min;Son, Dae-Ho;Kim, Jeong-Ho;Lee, Kyung-Su;Won, Sung-Hwan;Sok, Jung-Hyun;Hong, Wan-Shick;Park, Kyoung-Wan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.1
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    • pp.27-31
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    • 2008
  • We have studied nonvolatile memory properties of MOSFETs with double-stacked Si nanoclusters in the oxide-gate stacks. We formed Si nanoclusters of a uniform size distribution on a 5 nm-thick tunneling oxide layer, followed by a 10 nm-thick intermediate oxide and a second layer of Si nanoclusters by using LPCVD system. We then investigated the memory characteristics of the MOSFET and observed that the charge retention time of a double-stacked Si nanocluster MOSFET was longer than that of a single-layer device. We also found that the double-stacked Si nanocluster MOSFET is suitable for use as a dual-bit memory.