Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Synthesis and Optoelectronic Characteristics of Single-crystalline Si Nanowires

  • Kim, Kyung-Hwan (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
  • Keem, Ki-Hyun (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
  • Kang, Jeong-Min (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
  • Yoon, Chang-Joon (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
  • Jeong, Dong-Young (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
  • Min, Byung-Don (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
  • Cho, Kyoung-Ah (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
  • Kim, Hyun-Suk (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
  • Kim, Sang-Sig (Department of Electrical Engineering and Institute for Nano Science, Korea University)
  • Published : 2005.10.01
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Abstract

Photocurrent of a single-crystalline Si nanowire is investigated in this paper. Single-crystalline Si nanowires with amorphous $SiO_2$ shells were first synthesized from ball-milled SiO powders by thermal chemical vapor deposition, and then the amorphous $SiO_2$ shells were etched out from the as-synthesized Si nanowires. For a single-crystalline Si nanowire, photocurrent-voltage curves taken in air at room temperature were non-linear, and rapid photoresponses were observed when the light was switched on and off. The photocurrent was not changed in intensity under the illumination. Photocurrent mechanism in the single-crystalline Si nanowire is discussed in this paper.

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References

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