• 한국정밀공학회지
• /
• 제28권2호
• /
• pp.239-244
• /
• 2011

Nano Imprint Lithography(NIL) is technique for copying a pattern from stamp with nano size pattern in order to replicated the materials. It is very important to demold in order to make NIL process effectively. Self Assembled Monolayers(SAM) coater is manufactured by means of decreasing surface energy with the stamp surface treatment to improve release characteristics. Manufactured device contains tilting and rotation option for increasing process life time by coating on the sidewall of the pattern in stamp. The stamp coated with optimized tilting angle $30^{\circ}$ and rotation speed of 10rpm has more imprinting cycles than the stamping coated without tilting and rotation. Effective SAM coating on the sidewall of the pattern in stamp will improve by 50% of process life time.

• 대한기계학회논문집A
• /
• 제29권9호
• /
• pp.1169-1174
• /
• 2005

Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. In particular, ultraviolet-nanoimprint lithography (UV-NIL) is applicable to large area imprint easily. We have proposed a new UV-NIL process using an elementwise patterned stamp (EPS), which consists of a number of elements, each of which is separated by channel. Experiments on UV-NIL are performed on an EVG620-NIL using the EPS with 3mm channel width. The replication of uniform sub 70 nm lines using the EPS is demonstrated. We investigate the nonuniformity of residual layer caused by wafer deformation in experiment with varying wafer thickness. Severely deformed wafer works as an obstacle in spreading of dropped resin, which causes nonuniformity of thickness of residual layer. Numerical simulations are conducted to analyze aforementioned phenomenon. Wafer deformation in the process is simulated by using a simplified model, which is a good agreement with experiments.

• 대한수학회논문집
• /
• 제35권4호
• /
• pp.1095-1106
• /
• 2020

The purpose of this paper is to introduce a new class of rings that is closely related to the class of pseudo-Krull domains. Let 𝓗 = {R | R is a commutative ring and Nil(R) is a divided prime ideal of R}. Let R ∈ 𝓗 be a ring with total quotient ring T(R) and define 𝜙 : T(R) → R_Nil(R) by ${\phi}({\frac{a}{b}})={\frac{a}{b}}$ for any a ∈ R and any regular element b of R. Then 𝜙 is a ring homomorphism from T(R) into R_Nil(R) and 𝜙 restricted to R is also a ring homomorphism from R into R_Nil(R) given by ${\phi}(x)={\frac{x}{1}}$ for every x ∈ R. We say that R is a 𝜙-pseudo-Krull ring if 𝜙(R) = ∩ R_i, where each R_i is a nonnil-Noetherian 𝜙-pseudo valuation overring of 𝜙(R) and for every non-nilpotent element x ∈ R, 𝜙(x) is a unit in all but finitely many R_i. We show that the theories of 𝜙-pseudo Krull rings resemble those of pseudo-Krull domains.

• 반도체디스플레이기술학회지
• /
• 제14권3호
• /
• pp.61-66
• /
• 2015

Recently, the major trends of NIL are high throughput and large area patterning. For UV NIL, if it can be proceeded in the non-vacuum environment, which greatly simplifies tool construction and greatly shorten process times. However, one key issue in non-vacuum environment is air bubble formation problem. In this paper, numerical analysis of bubble defect of UV NIL is performed. Fluent, flow analysis focused program was utilized and VOF (Volume of Fluid) skill was applied. For various resist-substrate and resist-mold angles, effects of velocity inlet and residual layer thickness of resist on bubble defect formation were investigated. The numerical analyses show that the increases of velocity inlet and residual layer thickness can cause the bubble defect formation, however the decreases of velocity inlet and residual layer thickness take no difference in the bubble defect formation.

• 대한수학회지
• /
• 제53권5호
• /
• pp.1057-1075
• /
• 2016

Let R be a ring in which Nil(R) is a divided prime ideal of R. Then, for a suitable property X of integral domains, we can define a ${\phi}$-X-ring if R/Nil(R) is an X-domain. This device was introduced by Badawi [8] to study rings with zero divisors with a homomorphic image a particular type of domain. We use it to introduce and study a number of concepts such as ${\phi}$-Schreier rings, ${\phi}$-quasi-Schreier rings, ${\phi}$-almost-rings, ${\phi}$-almost-quasi-Schreier rings, ${\phi}$-GCD rings, ${\phi}$-generalized GCD rings and ${\phi}$-almost GCD rings as rings R with Nil(R) a divided prime ideal of R such that R/Nil(R) is a Schreier domain, quasi-Schreier domain, almost domain, almost-quasi-Schreier domain, GCD domain, generalized GCD domain and almost GCD domain, respectively. We study some generalizations of these concepts, in light of generalizations of these concepts in the domain case, as well. Here a domain D is pre-Schreier if for all $x,y,z{\in}D{\backslash}0$, x | yz in D implies that x = rs where r | y and s | z. An integrally closed pre-Schreier domain was initially called a Schreier domain by Cohn in [15] where it was shown that a GCD domain is a Schreier domain.

• 한국진공학회지
• /
• 제14권1호
• /
• pp.35-39
• /
• 2005

본 실험에서는 단위요소 사이에 채널을 갖는 Elementwise Patterned Stamp (이하 EPS)를 이용하여 싱글스탭 (single step)으로 4인치 웨이퍼를 임프린트 하는 공정을 수행하였다. 단위요소간의 간격이 3m인 EPS를 이용한 임프린트에서 50 - 100nm급의 패턴을 성공적으로 형성하였다. 그러나 임프린트 과정 중 EPS의 채널 부분에서 웨이퍼의 미소변형이 발생하여 단위요소의 미충전과 불균일한 잔여층이 형성되는 문제들이 발생하였다. 본 논문에서는 이러한 웨이퍼의 미소변형이 단위요소 충전과 패턴형성에 미치는 영향을 확인해 보기 위해 웨이퍼의 두께를 100 - 500㎛로 변화시켜가며 임프린트 실험을 수행하였고, 유한요소법(Finite Element Method, FEM)을 이용한 수치모사를 통하여 실험결과를 확인하였다. 또한 웨이퍼의 미소변형이 발생하는 또 다른 요인인 EPS의 채널 폭을 3mm, 2mm, 1mm로 변화시키며 수행한 수치모사를 통하여 안정된 임프린트 조건을 제시하였다.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2005년도 춘계학술대회 논문집
• /
• pp.1489-1492
• /
• 2005

Compared to other nano-patterning techniques, Nano imprint Lithography (NIL) has some advantages of high throughput and low process cost. To imprint low temperature and pressure, UV Nano imprint Lithography, which using the monomer based UV curable resin is suggested. Because fabrication of high fidelity pattern on topographical substrate is difficult, bi-layer Nano imprint lithography, which are consist of easily removable under-layer and imprinted pattern, is being used. If residual layer is not remained after imprinting, and under-layer is removed by oxygen RIE etching, we might be able to fabricate the bi-layer pattern for easy lift-off process.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2007년도 춘계학술대회A
• /
• pp.343-348
• /
• 2007

Molecular dynamics study of thermal NIL (Nano Imprint Lithography) process is performed to examine stamp-resist interactions. A layered structure consists of Ni stamp, poly-(methylmethacrylate) thin film resist and Si substrate was constructed for isothermal ensemble simulations. Imposing confined periodicity to the layered unit-cell, sequential movement of stamp followed by NVT simulation was implemented in accordance with the real NIL process. Both vdW and electrostatic potentials were considered in all non-bond interactions and resultant interaction energy between stamp and PMMA resist was monitored during stamping and releasing procedures. As a result, the stamp-resist interaction energy shows repulsive and adhesive characteristics in indentation and release respectively and irregular atomic concentration near the patterned layer were observed. Also, the spring back and rearrangement of PMMA molecules were analyzed in releasing process.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2007년도 춘계학술대회A
• /
• pp.502-505
• /
• 2007

PMMA has been extensively adopted in Nano Imprint Lithography(NIL). PMMA nano-structures experience severe mechanical load and deformation during NIL process, and understanding its mechanical behavior is very important in designing and optimizing NIL process. One of the most promising techniques for characterizing the mechanical behavior of nano structures is nano pillar compression test. In this study, the mechanical behaviors of PMMA pillars during compression test are analyzed using Molecular Dynamics. Two methods for simulation of PMMA nano pillars are proposed. The stress-strain relationship of nano-scale PMMA structure is obtained based on CVFF(Covalent Valence Force Fields) potential and the dependency of the applied strain rate on the stress-strain relationship is analyzed. The obtained stress-strain relationships can be useful in simulating nano-scale PMMA structures using Finite Element Method(FEM) and understanding the experimental results obtained by compression test of PMMA nano pillars.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2007년도 춘계학술대회A
• /
• pp.332-336
• /
• 2007

Temperature is an essential process variable in nanoimprint lithography(NIL) where the temperature varies between room temperature and above the glass transition temperature. To simulate NIL process, we employ both the Nose-Poincare method for temperature controlled molecular dynamics(MD) and force field for polymer material i.e. polymethyl methacrylate(PMMA), which is most widely selected as NIL resist. Nose-Poincare method, which convinces the conservation of Hamiltonian structure and time-reversal symmetry, overcomes the drawbacks inherent in the conventional methods such as Nose thermostat and Nose-Hoover thermostat. Thus, this method exhibits enhanced numerical stability even when the temperature fluctuation is large. To describe PMMA, we adopt the force field which account for bond stretch, bending, torsion, inversion, partial charge, and van der Waals energy.