• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• Journal of the Korean institute of surface engineering
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• v.30 no.4
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• pp.255-261
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• 1997

Thin film batteries can be used as a micro power source for electronic in which minute power is needed. In this study, lithium phosphorous oxynitride(LIPON) thin films were deposited as an eletrolyte for lithium ion batteries using RF magentron sputtering of lithium phosphate in N2. Ti was also added into the LIPON films as a second network former to enhance the ioinc conductivity of the films. The optimum conditions for LIPON film deposition were sought and the electrolyte with the conductivity of $2.5 \times 10^{-6}$S/cm was obtained at the condition of RF power 4.4 W/$\textrm{cm}^2$, process pressure 10 mtorr and pure nitrogen ambience. Furthermore, the conductivity of LIPON films was increased from $2.5 \times 10^{-6}$S/cm to $8.6 \times 10^{-6}$S/cm by the doping of 2.4at.% Ti. It was also found that by adding Ti to LIPON films, Li content was increased and nitrogen content that reported having the cross-linking effect on LIPON films was also increased as confirmed XPS.

• Bulletin of the Korean Chemical Society
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• v.33 no.12
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• pp.4052-4058
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• 2012

The composite photocatalyst, N-$TiO_2$ loaded with $Ni_2O_3$, was prepared by $N_2$ plasma treatment. X-ray diffraction, X-ray fluorescence, $N_2$ adsorption, UV-vis spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy were used to characterize the prepared $TiO_2$ samples. The results indicated that the band gap energy was decreased obviously by nitrogen doping, whereas loading of $Ni_2O_3$ did not influence the band gap and visible light absorption. The photocatalytic activities were tested in the degradation of 2,4,6-trichlorophenol (TCP) under visible light. The photocatalytic activity and stability of composite photocatalyst were much higher than that of catalyst modified with nitrogen or $Ni_2O_3$ alone. The synergistic effect of doping nitrogen and $Ni_2O_3$ over $TiO_2$ was investigated.

• Current Applied Physics
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• v.18 no.11
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• pp.1268-1274
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• 2018

We have investigated the effects of chemical rounding (CR) on the surface passivation and/or antireflection performance of $AlO_{x^-}$ and $AlO_x/SiN_x:H$ stack-passivated pyramid textured $p^+$-emitters with two different boron doping concentrations, and on the performance of bifacial n-PERT Si solar cells with a front pyramid textured $p^+$-emitter. From experimental results, we found that chemical rounding markedly enhances the passivation performance of $AlO_x$ layers on pyramid textured $p^+$-emitters, and the level of performance enhancement strongly depends on boron doping concentration. Meanwhile, chemical rounding increases solar-weighted reflectance ($R_{SW}$) from ~2.5 to ~3.7% for the $AlO_x/SiN_x:H$ stack-passivated pyramid textured $p^+$-emitters after 200-sec chemical rounding. Consequently, compared to non-rounded bifacial n-PERT Si cells, the short circuit current density Jsc of 200-sec-rounded bifacial n-PERT Si cells with ~60 and ${\sim}100{\Omega}/sq$ $p^+$-emitters is reduced by 0.8 and $0.6mA/cm^2$, respectively under front $p^+$-emitter side illumination. However, the loss in the short circuit current density Jsc is fully offset by the increased fill factor FF by 0.8 and 1.5% for the 200-sec-rounded cells with ~60 and ${\im}100{\Omega}/sq$ $p^+$-emitters, respectively. In particular, the cell efficiency of the 200-sec-rounded cells with a ${\sim}100{\Omega}/sq$ $p^+$-emitter is enhanced as a result, compared to that of the non-rounded cells. Based on our results, it could be expected that the cell efficiency of bifacial n-PERT Si cells would be improved without additional complicated and costly processes if chemical rounding and boron doping processes can be properly optimized.

• Environmental Engineering Research
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• v.13 no.4
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• pp.171-176
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• 2008

Studies on visible-light-driven photocatalysis of air pollutants at indoor air quality (IAQ) levels have been limited. Current study investigated visible-light derived photocatalysis with N-doped and S-doped titanium dioxide ($TiO_2$) for the control of benzene at indoor levels. Two preparation processes were employed for each of the two types of photocatalyst: urea-Degussa P-25 $TiO_2$ and titania-colloid methods for the N-doped $TiO_2$; and titanium isopropoxid- and tetraisopropoxide-thiourea methods for the S-doped $TiO_2$. Furthermore, two coating methods (EDTA- and acetylacetone-dissolving methods) were tested for both the N-doped and S-doped $TiO_2$. The two coating methods exhibited different photocatalytic degradation efficiency for the N-doped photocatalysts, whereas they did not exhibit any difference for the S-doped photocatalysts. In addition, the two doping processes showed different photocatalytic degradation efficiency for both the S-doped and N-doped photocatalysts. For both the N-doped and S-doped $TiO_2$, the photocatalytic oxidation (PCO) efficiency increased as the hydraulic diameter (HD) decreased. The degradation efficiency determined via a PCO system with visible-light induced $TiO_2$ was lower than that with UV-light induced unmodified $TiO_2$, which was obtained from previous studies. Nevertheless, it is noteworthy that for the photocatalytic annular reactor with the HD of 0.5 cm, PCO efficiency increased up to 52% for the N-doped $TiO_2$ and 60% for the S-doped $TiO_2$. Consequently, when combined with the advantage of visible light use over UV light use, it is suggested that with appropriate HD conditions, the visible-light-assisted photocatalytic systems can also become an important tool for improving IAQ.

• Journal of Korean Society of Environmental Engineers
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• v.31 no.11
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• pp.1019-1024
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• 2009

Visible-light-active $TiO_2-_xN_x$ nanoparticles with a homogeneous anatase crystalline structure were successfully prepared through a hydrolysis of $TiCl_4$ with ammonia solution. The samples were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), $N_2$-sorption, and UV-vis diffuse reflectance spectra (DRS) techniques. The light absorption onset shifted from 390 nm on pure $TiO_2$ to the visible region at 530 nm on nitrogen-doped $TiO_2$. A clear decrease in the band gap was deduced from the DRS results. The photocatalytic activity was evaluated from the photodegradation of congo red solution under visible light irradiation. The photocatalyst showed the highest photocatalytic activity at an optimal value of nitrogen doping concentration. This was suggested that the nitrogen doping should have an important effects on the improvement of photocatalytic activity.

• Journal of Powder Materials
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• v.29 no.6
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• pp.492-498
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• 2022

N-doped Na₂Ti₆O₁₃@TiO₂ (denoted as N-NTO@TiO₂) composites are successfully synthesized using a simple two-step process: 1) ball-milling of TiO₂ with Na₂CO₃ followed by heat treatment at 900℃; 2) mixing of the prepared Na₂Ti₆O₁₃ with titanium isopropoxide and calcining with urea at 500℃. The prepared composites are characterized using XRD, SEM, TEM, FTIR, and BET. The N-NTO@TiO₂ composites exhibit well-defined crystalline and anatase TiO₂ with exposed {101} facets on the external surface. Moreover, dopant N atoms are uniformly distributed over a relatively large area in the lattice of the composites. Under visible light irradiation, ~51% of the aqueous methylene blue is photodegraded by N-NTO@TiO₂ composites, which is higher than the values shown by other samples because of the coupling effects of the hybridization of NTO and TiO₂, N-doping, and presence of anatase TiO₂ with exposed {101} facets.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1332_1333
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• 2009

The electrical properties of an inorganic/organic heterojunction has been investigated by spin coating the p-type polymer poly(3,4 ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT:PSS) on an n-type gallium doping zinc oxide (GZO) film. Current-voltage (I-V) characteristics of the fabricated heterojunction diodes have a good rectifying characteristics. The barrier height is calculated 0.8 eV.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.56-62
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• 1999

All the cells on the whole memory array or a block of the memory array in the Flash EEPROM's are erased at the same time using Fowler-Nordheim (FN) tunneling. some of the cels are often overerased since the tunneling is not a self-limited process. In this paper, the optimum doping concentration of the floating gate solve the overerase problem has been studied. For these studies, N-type MOSFETs and MOS capacitors with various doping concentrations of the gate polysilicon have been fabricated and their electrical characteristics have been measured and analyzed. As the results of the experiment, it has been found that the overerase problem can be prevented if the doping concentration of the floating gate is low enough (i.e. below $1.3{\times}10^{18}/cm^3$). It is because the potential difference between the floating gate and the source is lowered due to the formation of the depletion layer in the floating gate and thus the erasing operation stops by itself after most of the electrons stored in the floating gate are extracted. On the other hand, the uniformity of the Vt and the gm has been significantly poor if the coping concentration of the floating, gate is too much lowered (i.e. below $1.3{\times}10^{17}/cm^3$), which is believed to be due to nonuniform loss of the dopants from the nonuniform segregation in the floating gate. Consequently, the optimum doping concentration of the floating gate to suppress the overerase problem and get the uniform Vt and has been found to range from $1.3{\times}10^{17}/cm^3$ to $1.3{\times}10^{18}/cm^3$ in the Flash EEPROM.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.1-7
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• 2006

3-dimensional(3-D) simulations of ideal double-gate bulk FinFET were performed extensively and the electrical characteristics. were analyzed. In 3-D device simulation, we changed gate length($L_g$), height($H_g$), and channel doping concentration($N_b$) to see the behaviors of the threshold voltage($V_{th}$), DIBL(drain induced barrier lowering), and SS(subthreshold swing) with source/drain junction depth($X_{jSDE}$). When the $H_g$ is changed from 30 nm to 45nm, the variation gives a little change in $V_{th}$(less than 20 mV). The DIBL and SS were degraded rapidly as the $X_{jSDE}$ is deeper than $H_g$ at low fin body doping($1{\times}10^{16}cm^{-3}{\sim}1{\times}10^{17}cm^{-3}$). By adopting local doping at ${\sim}10nm$ under the $H_g$, the degradation could be suppressed significantly. The local doping also alleviated $V_{th}$ lowering by the shallower $X_{jSDE}\;than\;H_g$ at low fin body doping.