• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.193-193
• /
• 2012

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.434-435
• /
• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.

• 한국안광학회지
• /
• 제9권1호
• /
• pp.161-166
• /
• 2004

본 연구에서는 이온빔 증착방법을 사용하여 스테인레스 스틸 기판 위에 TiN 박막을 성장하였다. $10^{-5}$ Torr의 질소 분위기에서 아르곤 가스를 보조 이온빔으로 사용하여 TiN 박막을 성장하였다. TiN 박막의 화학 조성, 색상, 밀착력 등을 En의(원자당 이용에너지) 변화에 따라서 측정하였다. En이 증가 할 때 질소와 Ti의 비율은 선형적으로 변화 하였고, 높은 En의 경우에는 질소와 Ti의 비율은 1.2를 가지며 포화되었다. 밝은 금색은 En이 어떤 임계값(Ecn)에 도달 하였을 때 얻어졌다. 이때의 질소와 Ti의 비율은 0.9 이다.

• Journal of Korean Vacuum Science & Technology
• /
• 제1권1호
• /
• pp.24-29
• /
• 1997

Surface morphologies and fundamental characteristics of molybdenum nitride films deposited by reactive dc magnetron sputtering were studied for application to Cu diffusion barrier. A phase transformation from Mo to $\gamma$-Mo$_2$N phase at 0.5$N_2$ flow ratio.($N_2$/(Ar+$N_2$)) equal to and larger than 0.2, whereas a second phase transformation to $\gamma$-MoN phase at 0.5 N2 flow ratio, With the variation of the N2 ratio the surface morphologies of the films were generally smooth except the cases of 0.2 and 0.3$N_2$ gas rations, where build-up of film stresses occurred. $\gamma$-Mo$_2$N film was found to crystallize at the deposition temperature of 40$0^{\circ}C$. The surfaces of $\gamma$-Mo$_2$N films deposited up to 40$0^{\circ}C$ were smooth, but the film deposited at 50$0^{\circ}C$ had very rough surface morphology. It seems that this was due to the building-up of thermal stresses at the high deposition temperature, which might lead to hillock formation.

• Journal of Ecology and Environment
• /
• 제36권1호
• /
• pp.31-38
• /
• 2013

Annual ring formation is considered a source of information to investigate the effects of environmental changes caused by temperature, air pollution, and acid rain on tree growth. A comparative investigation of annual ring growth of Cryptomeria japonica in relation to environmental changes was conducted at two sites in southern Korea (Haenam and Jangseong). Three wood disks from each site were collected from stems at breast height and annual ring growth was analyzed. Annual ring area at two sites increased over time (p > 0.05). Tree ring growth rate in Jangseong was higher than that in Haenam. Annual ring area increment in Jangseong was more strongly correlated with environmental variables than that in Haenam; annual ring growth increased with increasing temperature (p < 0.01) and a positive effect of $NO_2$ concentration on annual ring area (p < 0.05) could be attributed to nitrogen deposition in Jangseong. The correlation of annual ring growth increased with decreasing $SO_2$ and $CO_2$ concentrations (p < 0.01) in Jangseong. Variation in annual growth rings in Jangseong could be associated with temperature changes and N deposition. In Haenam, annual ring growth was correlated with $SO_2$ concentration (p < 0.01), and there was a negative relationship between precipitation pH and annual ring area (p < 0.01) which may reflect changes in nutrient cycles due to the acid rain. Therefore, the combined effects of increased $CO_2$, N deposition, and temperature on tree ring growth in Jangseong may be linked to soil acidification in this forest ecosystem. The interactions between air pollution ($SO_2$) and precipitation pH in Haenam may affect tree growth and may change nutrient cycles in this site. These results suggested that annual tree ring growth in Jangseong was more correlated with environmental variables than that in Haenam. However, the further growth of C. japonica forest at two sites is at risk from the long-term effects of acid deposition from fossil fuel combustion.

• 센서학회지
• /
• 제6권3호
• /
• pp.200-206
• /
• 1997

열산화시킨 실리콘 웨이퍼 위에 저압화학기상성장법으로 $SiCl_{2}H_{2}$, $NH_{3}$ 및 $N_{2}O$ 기체를 사용하여 실리콘 옥시나이트라이드($Si_{x}O_{y}N_{z}$) 층을 제작하였다. 세 가지의 다른 조성이 기체 유속비($NH_{3}/N_{2}O$)를 각기 0.2, 0.5 및 2로 변화시키고 $SiCl_{2}H_{2}$의 기체 유속은 고정시킴으로써 얻어졌다. 엘립소메트리와 HFCV(High Frequency Capacitance-Voltage) 측정법을 채택하여 굴절율, 유전율 및 조성의 차이를 각각 조사했다. 실리콘 옥시나이트라이드는 내부에 포함된 실리콘 나이트라이드 성분량에 관계없이 용액 중에서 순수한 실리콘 나이트라이드와 유사한 안정성을 보유했다. 실리콘 옥시나이트라이드 층 알칼리이온 감지성의 크기 순서는 실리콘 나이트라이드 성분량에 영향을 받았다. 보다 나은 알칼리이온 감지성이 실리콘 옥시나이트라이드의 벌크 내에 있는 실리콘 디옥시드의 성분량을 증가시킴으로써 얻어졌다.

• 공업화학
• /
• 제18권5호
• /
• pp.506-510
• /
• 2007

전기적 특성을 가지는 4,4',4''-tris(N-(1-naphthyl)-N-phenylamino)-triphenylamine (1-TNATA)가 유기발광소자(OLED)에서 전극으로 사용되는 ITO (Indium Tin Oxide)와 홀 수송층(Hole Transport Layer, HTL) 사이에 박막으로 진공증착되었다. 분자배열이 잘 되어진 1-TNATA의 경우 ITO와 홀 수송층 사이의 계면에서 생기는 전하주입장벽을 줄임으로 소자의 안정성과 효율을 높여준다. 본 연구에서의 라만 스펙트라(Raman spectra) 분석 결과, 증착된 1-TNATA 박막의 열처리와 증착하는 동안 전자기장 처리에 의해서 박막이 집적되고 분자배열이 이루어짐을 확인하였다. 열처리를 한 경우 1-TNATA 박막으로의 전류 흐름이 25% 증가하였다. 또한, $110^{\circ}C$에서 열처리한 1-TNATA 박막으로 제조된 다층유기발광소자의 전원 효율과 발광효율이 향상되었다. 열처리한 박막이 전자기장으로 처리한 박막에 비해 높은 효율을 나타내었다.

• 한국재료학회지
• /
• 제21권2호
• /
• pp.106-110
• /
• 2011

A high thermal conductive AlN composite coating is attractive in thermal management applications. In this study, AlN-YAG composite coatings were manufactured by atmospheric plasma spraying from two different powders: spray-dried and plasma-treated. The mixture of both AlN and YAG was first mechanically alloyed and then spray-dried to obtain an agglomerated powder. The spray-dried powder was primarily spherical in shape and composed of an agglomerate of primary particles. The decomposition of AlN was pronounced at elevated temperatures due to the porous nature of the spray-dried powder, and was completely eliminated in nitrogen environment. A highly spherical, dense AlN-YAG composite powder was synthesized by plasma alloying and spheroidization (PAS) in an inert gas environment. The AlN-YAG coatings consisted of irregular-shaped, crystalline AlN particles embedded in amorphous YAG phase, indicating solid deposition of AlN and liquid deposition of YAG. The PAS-processed powder produced a lower-porosity and higher-hardness AlN-YAG coating due to a greater degree of melting in the plasma jet, compared to that of the spray-dried powder. The amorphization of the YAG matrix was evidence of melting degree of feedstock powder in flight because a fully molten YAG droplet formed an amorphous phase during splat quenching.

• 한국재료학회지
• /
• 제8권4호
• /
• pp.317-322
• /
• 1998

플라즈마 화학기상증착법에 의해 증착된 저유전율 SiOF박막의 물성 안정화를 위하여 증착후 $N_2O$플라즈마로 열처리함으로써 그 특성을 평가하였다. SiOF박막은 대기방치 및 열처리에 불안정한 성질을 가진다. SiOF 박막은 박막내의 F-Si-F 결합의 존재 때문에 흡습현상이 발생하며, 박막내의 F함량이 증가함에 따라 수분 흡수가 증가한다. 또한 열처리를 거치면서 F이 탈착되어 박막내의 F함량이 감소한다. $N_2O$플라즈마 열처리는 표면에 얇은 SiON층을 형성시킴으로써 박막을 안정화시키는데 효과적이었다. 그러나 장시간의 N/sun 2/O플라즈마 열처리는 유전율을 크게 증가시킨다. 따라서 $N_2O$플라즈마 열처리에 의한 유전율의 증가없이 물성을 안정화 시키기 위해서는, 대기방치나 열처리에 의한 안정화 효과를 유지하면서 $N_2O$플라즈마 열처리에 의한 유전율의 증가를 최소화시킬 수 있는 공정의 확립이 필요하다.

• 전기학회논문지
• /
• 제59권8호
• /
• pp.1401-1405
• /
• 2010

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $HfO_2$/p-Si structures. The $HfO_2$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. TEMAHf and $H_2O$ were used as the hafnium and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TEMAHf pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $HfO_2$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.