• Maxillofacial Plastic and Reconstructive Surgery
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• v.23 no.3
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• pp.205-211
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• 2001

Cleft palate is one of the most serious congenital anomalies in human that causes a sucking problem in newborn babies and morphologic deformity that usually leads to death in newborn mouse offspring due to an insufficient ability to suck milk. Therefore cleft palate had been researched with epidemiologic and molecular methods, and many etiologic factors were examined closely. Among of the research methods, biologic molecule researches have been more important method for cleft palate formation study. The $TGF-{\beta}$ had an important role in the cell migration, epithelial-mesenchymal transdifferentiation, extracellular matrix synthesis and deposition. But there was a little research which was study about correlation cleft palate induced by beta-aminonitroproprionitrile(BAPN) with $TGF-{\beta}$ expression. A purpose of this presented study was examed how $TGF-{\beta}$ expression in cleft palate mice. At gestation days 13, BAPN-monofumarate salts($(C_3H_6N_2)_2$ ${\cdot}$ $C_4H_4O_4$, Sigma Co.) was single oral administered to 4 pregnant rats according to 1g/kg body weight. And pregnant rats were sacrificed on day 20 post coitus(p.c.), The $TGF-{\beta}$ expression patterns of cleft formed fetus mice was followed that; 1.Osteoblast, mesenchymal cell and epithelial cell of cleft mice were low expression compare to control mice. 2.There was no $TGF-{\beta}$ difference expression pattern of osteocyte of cleft mice compare to control mice. 3. In western blot analysis, thickness of band of $TGF-{\beta}$ in cleft mice was thin and dilute compare to control mice.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.422-448
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• 1996

Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.

• Progress in Superconductivity and Cryogenics
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• v.18 no.4
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• pp.1-4
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• 2016

We investigated the relation between the Cu-O bond length and the superconducting properties of $BaSnO_3$ (BSO)-added $GdBa_2Cu_3O_{7-x}$ (GdBCO) thin films by using extended x-ray absorption fine structure (EXAFS) spectroscopy. 4 wt.% $BaSnO_3$ (BSO) added $GdBa_2Cu_3O_{7-x}$ (GdBCO) thin films with varying thickness from $0.2{\mu}m$ to $1.0{\mu}m$ were fabricated by using pulsed laser deposition (PLD) method. The transition temperature ($T_c$) and the residual resistance ratio (RRR) of the GdBCO films increased with increasing thickness up to $0.8{\mu}m$, where the crystalline BSO has the highest peak intensity, and then decreased. This uncommon behaviors of $T_c$ and RRR are likely to be created by the addition of BSO, which may change the ordering of GdBCO atomic bonds. Analysis from the Cu K-edge EXAFS spectroscopy showed an interesting thickness dependence of ordering behavior of BSO-added GdBCO films. It is noticeable that the ordering of Cu-O bond and the transition temperature are found to show opposite behaviors in the thickness dependence. Based on these results, the growth of BSO seemingly have evident effect on the alteration of the local structure of GdBCO film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.195-202
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• 1998

The LPCVD system of batch type for the massproduction of semiconductor fabrication has a problem of phosphorous concentration uniformity in the boat. In this paper we study an improvement of the uniformity for phosphorous concentration and sheet resistance. These property was improved by using the nitrogen process and modified long nozzle for gas injection tube in the doped polysilicon deposition system. The phosphorous concentration and its uniformity for polysilicon film are measured by XRF(X-ray Fluorescence) for the conventional process condition and nitrogen process. In conventional process condition, the phosphorous concentration, it uniformity and sheet resistance for polysilicon film are in the range of 3.8~5.4$\times$10\ulcorner atoms/㎤, 17.3% and 59~$\Omega$/ , respectively. For the case of nitrogen process the corresponding measurements exhibited between 4.3~5.3$\times$10\ulcorner atoms/㎤, 10.6% and 58~81$\Omega$/ . We find that in the nitrogen process the uniformity of phosphorous concentration improved compared with conventional process condition, however, the sheet resistance in the up zone of the boat increased about 12 $\Omega$/ . In modified long nozzle, the phosphorous concentration, its uniformity and sheet resistance for polysilicon films are in the range of 4.5~5.1$\times$10\ulcorner atoms/㎤, 5.3% and 60~65$\Omega$/ respectively. Annealing after $N_2$process gives the increment of grain size and the decrement of roughness. Modification of nozzle gives the increment of injection amount of PH$_3$. Both of these suggestion result in the stable phosphorous concentration and sheet resistance. The results obtained in this study are also applicable to process control of batch type system for memory device fabrication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.112-112
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• 2008

박막형 태양전지에 관한 연구는 1954년 D.C. Reynolds 가 단결정 CdS 에서 광기전력을 발견하면서부터 시작되었다. 고효율 단결정 규소 태양전지가 간편하게 제작되고 박막형 태양전지의 수명문제가 대두되어 한때는 연구가 중단되어지기도 하였으나, 에너지 문제가 심각해지면서 값이 저렴하고 넓은 면적에 쉽게 실용화 할 수 있는 박막형 태양전지에 많은 관심을 가지게 되었다. 박막형 태양전지에 사용되는 CdS는 II-VI 족 화합물 반도체로서 에너지금지대폭이 2.42eV인 직접천이형 n-type 반도체로서 대부분의 태양광을 통과시킬 수 있으며 가시광선을 잘 투과시키고 낮은 비저항으로서 광흡수층인 CdTe/$CuInSe_2$ 등과 같이 태양전지의 광투과층(윈도레이어)으로 널리 사용되고 있다. 이러한 이종접합 박막형 태양전지의 효율을 높이기 위해선 윈도레이어 재료인 CdS 박막의 낮은 전기 비저항치와 높은 광 투과도 값이 요구되어지고 있다. CdS 박막의 제작방법으로는 spray pyrolysis법, 스크린프린팅, 소결법, puttering법, 전착법, CBD(chemical bath deposition)법 및 진공증착법 등의 여러 가지 방법들이 보고되었다. 이 중 sputtering의 경우, 다른 방법들에서는 얻기 어려운 매우 얇은 두께의 박막 증착이 가능하며, 균일성 또한 우수하다. 또한 대면적화가 용이하여 양산화 기술로는 다른 제조 방법들에 비해 많은 장점을 가지고 있다. 따라서 본 연구에서는 sputtering에 의해 증착한 CdS의 박막에 광투과도 등의 향상을 위하여 CMP( chemical mechanical polishing) 공정을 적용하여 표면 특성을 개선하고자 하였다. 그 기초적인 자료로서 CdS 박막의 CMP 공정 조건에 따른 연마율과 비균일도, 표면 특성 등을 ellipsometer, AFM(atomic force microscopy) 및 SEM(scanning electron microscope) 등을 활용 하여 분석하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.447-453
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• 2017

In this study, $Li_2MnSiO_4$ cathode material and LiPON solid electrolyte were manufactured into thin films, and the possibility of their use in thin-film batteries was researched. When the RTP treatment was performed after $Li_2MnSiO_4$ cathode thin-film deposition on the SUS substrate by a sputtering method, a ${\beta}-Li_2MnSiO_4$ cathode thin film was successfully manufactured. The LiPON solid electrolyte was prepared by a reactive sputtering method using a $Li_3PO_4$ target and $N_2$ gas, and a homogeneous and flat thin film was deposited on a $Li_2MnSiO_4$ cathode thin film. In order to evaluate the electrochemical properties of the $Li_2MnSiO_4$ cathode thin films, coin cells using only a liquid electrolyte were prepared and the charge/discharge test was conducted. As a result, the amorphous thin film of RTP treated at $600^{\circ}C$ showed the highest initial discharge capacity of about $60{\mu}Ah/cm^2$. In cases of coin cells using liquid/solid double electrolyte, the discharge capacities of the $Li_2MnSiO_4$ cathode thin films were comparable to those without solid LiPON electrolyte. It was revealed that $Li_2MnSiO_4$ cathode thin films with LiPON solid electrolyte were applicable in thin film batteries.

• 한국석유지질학회:학술대회논문집
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• autumn
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• pp.50-67
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• 1999

Biostratigraphic and paleoenvironmental analyses are carried out on cutting samples from the Dolgorae wells drilled in the Ulleung basin. The clayey, silty, and sandy sediments of the wells yield various microfossil assemblages of relatively good preservation, among which five fossil groups are reported; a total of 97 foraminiferal species of 66 genera, 19 nannofossil species of 12 genera, 86 ostracod species of 41 genera, 107 diatom species of 44 genera, and 124 dinoflagellate cysts species of 45 genera. Based on microfossils the geologic ages of the Dolgorae wells are dated to be from late Early Miocene to Early Pleistocene. Several biohorizons are defined in Neogene successions by the LOD (Last Ocurrence Datum) and FOD (First Ocurrence Datum) of marker species including G. truncatulinoides (LOD: 1.9 Ma) of foraminifera; C. macintyeri (LOD: 1.64-1.60), G. oceanica (FOD: 1.65 Ma), G. caribbeanica (1.72 Ma), D. brouweri (LOD: 2 Ma), R. pseudoumbilica (LOD: 3.66 Ma), P. lacunosa (FOD: 4.2 Ma) of nannofossils; S. ellipsoideus (LOD: 4 Ma), S. palcacantha (LOD: 10.2), C. giusepei (LOD: 14 Ma) of dinocysts; D. seminae v. fossilis (FOD: 3.7 Ma), T. antiqua (LOD: 1.7 Ma), T. convexa (LOD: 2.4 Ma), N. kamtschatica (LOD: 2.58 Ma), T. oestrupii(FOD: 5.1 Ma) of diatoms. Abundance patterns of microfossils throughout the wells reflect changes in paleoenvironmental and sedimentological settings of the basin in relation to sea-level variations. According to these data the large-cycle and small-cycle changes of transgression and regression phases are observed in terrestrial to marine sediments. This high-resolution sequence biostratigraphy established by various fossil groups enabled more reliable correlation between strata and refined interpretation on deposition systems of the basin. It also proved to provide fundamental and precise informations regarding stratigraphic correlation, tectonic events, basin, and depositional history for hydrocarbon explorations, especially in collaboration with seismic-stratigrahic analyses.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.7
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• pp.85-94
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• 1994

A high-resolution transmission electron microscopy study of the solid phase crystallization of the amorphous silicon thin films, deposited on SiOS12T at 52$0^{\circ}C$ by low pressure chemical vapor deposition and annealed at 55$0^{\circ}C$ in a dry N$_{2}$ ambient was carried out so that the arrangement of atoms in the crystalline silicon and at the amorphous/crystalline interface of the growing grains could be understood on an atomic level. Results show that circular crystalline silicon nuclei have formed and then the grains grow to an elliptical or dendritic shape. In the interior of all the grains many twins whose{111} coherent boundaries are parallel to the long axes of the grains are observed. From this result, it is concluded that the twins enhance the preferential grain growth in the <112> direction along {111} twin planes. In addition to the twins. many defect such as intrinsic stacking faults, extrinsic stacking faults, and Shockley partial dislocations, which can be formed by the errors in the stacking sequence or by the dissociation of the perfect dislocation are found in the silicon grain. But neither frank partial dislocations which can be formed by the condensation of excess silicon atoms or vacancies and can form stacking fault nor perfect dislocations which can be formed by the plastic deformation are observed. So it is concluded that most defects in the silicon grain are formed by the errors in the stacking sequence during the crystallization process of the amorphous silicon thin films.

• Journal of the Korean Chemical Society
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• v.50 no.3
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• pp.208-215
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• 2006

A simply prepared graphite, pencil-type working electrode was utilized to monitor fenitrothion concentrations, using the cyclic voltammetry (CV) and square-wave (SW) stripping voltammetry methods. The optimum conditions for analysis were sought. A very low detection limit was obtained compared to that obtained when other common voltammetry methods are used. The optimal parameters of the pencil-type electrode were found to be as follows: a pH of 3.7, a frequency of 500 Hz, an SW amplitude of 0.1 V, an increment potential of 0.005 V, an initial potential of -0.9V, and a deposition time of 500 sec. The analytical detection limit was determined to be 6.0 ngL-1 (2.16410-11 molL-1) fenitrothion at SW anodic and CV, and the relative standard deviation at the fenitrothion concentration of SW anodic 10 ugL-1 was 0.30% (n = 15) under the optimum conditions. Analysis was directly conducted through in-vivo real-time assay.

• Economic and Environmental Geology
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• v.29 no.5
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• pp.639-660
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• 1996

The lowest formation of the Cretaceous Gyeongsang Supergroup, the Nakdong Formation, unconformably overlies the gneiss complex basement in Hadong, Gyeongsangnam-do and Gwangyang, Chullanam-do. The Nakdong Formation of the study area is 500-600 m thick and occurs as a belt shape. Based upon lithology, sedimentary structure, and bedding geometry the formation consists of three conglomerate facies (Gd, Gn, Gic), five sandstone facies (Sh-n, Sh-i, Sp, Sr, Sm), and four mudstone facies (Mf, Mfn, Mc, Mv). Sandstone facies are the most prominent in the study area. The twelve facies can be grouped into five facies associations. The depositional settings are elucidated from analyses of 12 facies and five facies associations of the formation. The lower part of the Nakdong Formation was deposited in alluvial plain, and the middle and upper parts were in a riverine system. The lithologies of the Nakdong Formation of the Gyeongsang Basin have been considered to consist of generally conglomerates and pebbly sandstones that were accumulated in alluvial fans. But the common lithology of the study area is sandstone which was formed in lower part of alluvial fan or fluvial setting. It is supposed that the coarser sedimentary sequence distributed west to the study area should be eroded out after deposition and early uplift, and the finer sandstone sequence in the east remains behind. The mineral composition of sandstones and the clast composition of conglomerates indicate that the Nakdong Formation was derived mainly from the metamorphic source rocks. Some reworked intraclasts were also supplied from the intrabasinal sedimentary layers. Paleocurrent data collected from cross-beddings, ripple marks, asymmetric sand dune suggest that most sediments were transported from north to south during the Nakdong Formation time.