• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.280-284
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• 2015

Among many the oxynitrides, TiNO and AlCrNO, have diverse applications in different technological fields. We prepared TiNO/AlCrNO/Al thin films on aluminum substrates using the method of dc reactive magnetron sputtering. The reactive gas flow, gas mixture, and target potential were applied as the sputtering conditions during the deposition in order to control the chemical composition. The multi-layer films have been prepared in an Ar and O₂+N₂ gas mixture rate. The surface properties were estimated by performing scanning electron microscopy (SEM). At a wavelength range of 0.3~2.5 μm, the exact composition and optical properties of thin films were measured by Auger electron spectroscopy (AES) and Ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry. The optimal absorptance of multi-layer films was exhibited above 95.5% in the visible region of the electromagnetic spectrum, and the reflectance was achieved below 1.89%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.29-34
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• 2008

In this paper, we investigated electrical and physical characteristics of nickel silicide using rare-earth metals(Er, Yb, Tb, Dy), Incorporated Ytterbium into Ni-silicide is proposed to reduce work function of Ni-silicide for nickel silicided schottky barrier diode (Ni-silicided SBD). Nickel silicide makes ohmic-contact or low schottky barrier height with p-type silicon because of similar work function (${\phi}_M$) in comparison with p-type silicon. However, high schottky barrier height is formed between Ni-silicide and p-type substrate by depositing thin ytterbium layer prior to Ni deposition. Even though the ytterbium is deposited below nickel, ternary phase $Yb_xN_{1-x}iSi$ is formed at the top and inner region of Ni-silicide, which is believed to result in reduction of work function about 0.15 - 0.38 eV.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.147-151
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• 1999

YBCO step-edge Josephson junction were fabricated on sapphire substrates. The steps were formed on R-plane sapphire substrates by using Ar ion milling with PR masks. The step angle was controlled in the wide range from 25$^{\circ}$ to 50$^{\circ}$ by adjusting both the Ar ion incident angle and the photoresist mask rotation angle relative to the incident Ar ion beam. CeO$_2$ buffer layer and in-situ YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films was deposited on the stepped R-plane sapphire substrates by pulsed laser deposition method. The YBCO film thickness was varied to obtain the ratio of film thickness to step height in the range from 0.5 to 1. The step edge junction exhibited RSJ-like behaviors with I$_cR_n$ product of 100 ${\sim}$ 300 ${\mu}$V, critical current density of 10$^3$ ${\sim}$ 10$^5$ A/ cm$^2$ at 77 K.

• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2607-2610
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• 2011

Monodispersed Ag/$TiO_2$ core/shell nanoparticles were synthesized in solution via colloid-seeded deposition process using Ag nanoparticles as colloid seeds and $Ti(SO_4)_2$ as Ti-source respectively. Silver nitrate was reduced to Ag nanoparticles with $N_2H_4{\cdot}H_2O$ in the presence of CTAB as stabilizing agent. The titania sols hydrolyzed by the $Ti(SO_4)_2$ solution deposited on the surface of Ag nanoparticles to form the Ag/$TiO_2$ core/shell nanoparticles. Inductively coupled plasma atomic emission spectrometry (ICP-AES) showed low amount of Ag ion leaching from the Ag/$TiO_2$ core/shell nanoparticles. The Ag/$TiO_2$ core/shell nanoparticles indicated excellent antibacterial effects against Escherichia coli and maintained long-term antibacterial property.

• Progress in Superconductivity and Cryogenics
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• v.22 no.2
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• pp.21-25
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• 2020

We investigated the flux pinning property of GdBa₂Cu₃O_7-x (GdBCO) films on top of La_0.7Sr_0.3MnO₃ (LSMO) nanoparticles deposited by a surface decoration. Both GdBCO films and LSMO nano particles were deposited by pulsed laser deposition and the number of laser pulses were varied from 80 to 320 in order to control the density of the LSMO nanoparticles. The magnetization data at 77 K showed that the critical current density (J_c) was enhanced in all of the GdBCO films with LSMO nanoparticles and that the J_c enhancement was found to be inversely proportional to the LSMO nanoparticle density. Structural analyses revealed that LSMO nanoparticles induce a compressive strain in the GdBCO films resulting in a disordering in the CuO₂ plane. Therefore, the enhanced flux pinning property in the GdBCO with LSMO nanoparticles was attributed to the competing effect between the increase of pinning centers and the increase of compressive strain in the superconducting phase.

• Progress in Superconductivity and Cryogenics
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• v.17 no.2
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• pp.1-17
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• 2015

$MgB_2$ thin films with superior superconducting properties are very promising for superconducting magnets, electronic devices and coated conductor electric power applications. A clear understanding of flux pinning mechanism in $MgB_2$ films could be a big aid in improving the performance of $MgB_2$ by the enhancement of $J_c$. The fabrication advancement and the understanding of flux pinning mechanism of $MgB_2$ thin and thick films fabricated by using hybrid physical-chemical vapor deposition (HPCVD) are reviewed. The distinct kind of $MgB_2$ films, such as single-crystal like $MgB_2$ thin films, $MgB_2$ epitaxial columnar thick films, and a-axis-oriented $MgB_2$ films are included for flux pinning mechanism investigation. Various attempts made by researchers to improve further the flux pinning property and $J_c$ performance by means of doping in $MgB_2$ thin films by using HPCVD are also summarized.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1527-1529
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• 2001

The physicochemical properties of the LB films were by AFM. We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 2, 10, 30[mN/m]. The stable images are probably due to a s interaction between the monolayer film and substrate. We are unable to obtain molecule res in images of the films but did see a marked co between images of the bare substrate and those the network structure film deposited ont Formation that prevent when gas phase stat liquid phase state measure but Could know o matter that molecules form equal and stable when molecules were not distributed evenly, accumulated in solid state only.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.40-44
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• 2000

Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.15-19
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• 1998

Defects formation of Chemical Vapor Deposition (CVD) diamond on $^4He^{2+}$ irradiation and after remote hydrogen plasma treatment(RHPT) were investigated by cathodoluminescence(CL). As calculated in the TRIM simulation, the light elements of $^4He^{2-}$ can be penetrated into the diamond bulk structure at 3~4 $\mu\textrm{m}$ depth. The effects of the implantation region were observed when 5 keV~20 keV electron energy (insight 0.3~4.0$\mu\textrm{m}$) of CL measurement was irradiated to diamond at temperature 80 K. After the RHPT, rehybridization of irradiation damaged diamond was studied. The intensity of 5RL center(intrinsic defect of C) was diminished. The 2.16 eV center (N-V center) occurring usually by annealing could not be seen after RHPT. The diamond was rehybridized by hydrogen radicals without etching and thermal degradation by the RHPT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1117-1120
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• 2004

경제적인 공정분석과 최적화를 위해서는 컴퓨터를 이용한 플라즈마 예측모델이 요구되고 있다. 본 연구에서는 일반화된 회귀 신경망 (GRNN)을 이용하여 플라즈마 증착공정 모델을 개발한다. GRNN의 예측성능은 패턴층 뉴런의 가우시안 함수를 구성하는 학습인자, 즉 spread에 의존한다. 종래의 모델에서는 모든 가우시안 함수의 spread가 동일한 값에서 최적화되었으며, 이로 인해 모델의 예측성능을 향상시키는 데에는 한계가 있었다. 본 연구에서는 유전자 알고리즘 (GA)를 이용하여 다변수 spread를 최적화하는 기법을 개발하였으며, 그 성능을 PECVD 공정에 의해 증착된 SiN 박막의 증착률에 적용하여 평가하였다. $2^{6-1}$ 부분인자 실험계획법에 의해 수집된 데이터를 이용하여 신경망을 학습하였고, 모델적합성 점검을 위해 별도의 12번의 실험을 수행하였다. 가우시안 함수의 spread는 0.2에서 2.0까지 0.2간격으로 증가시켰으며, 최적화한 GA-GRNN모델의 예측성능은 6.6 ${\AA}/min$이었다. 이는 종래의 방식으로 최적화한 모델의 예측성능 (13.5 ${\AA}/min$)과 비교하여 50.7% 향상된 예측성능이며, 이러한 향상은 제안한 GA-GRNN 모델이 플라즈마 공정 모델의 예측성능을 증진하는데 매우 효과적임을 보여준다.