• Journal of the Korean Society of Marine Environment & Safety
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• v.29 no.1
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• pp.24-35
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• 2023

Rapid industrialization and urbanization have led to severe marine pollution. A Water Quality Index (WQI) has been developed to allow the effective management of marine pollution. However, the WQI suffers from problems with loss of information due to the complex calculations involved, changes in standards, calculation errors by practitioners, and statistical errors. Consequently, research on the use of artificial intelligence techniques to predict the marine and coastal WQI is being conducted both locally and internationally. In this study, six techniques (RF, XGBoost, KNN, Ext, SVM, and LR) were studied using marine environmental measurement data (2000-2020) to determine the most appropriate artificial intelligence technique to estimate the WOI of five ecoregions in the Korean seas. Our results show that the random forest method offers the best performance as compared to the other methods studied. The residual analysis of the WQI predicted score and actual score using the random forest method shows that the temporal and spatial prediction performance was exceptional for all ecoregions. In conclusion, the RF model of WQI prediction developed in this study is considered to be applicable to Korean seas with high accuracy.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.221-221
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• 2013

Vertical LED (VLED) has been recognized as a way to obtain the high-power LED due to their advantages [1]. However, approximately 4% of the light generated from the active region is extracted, if the light extraction from side walls and back side is neglected because of Fresnel reflection (FR) and total internal reflection (TIR) [2,3]. In this study, the optical simulation of the VLED with the various microstructures was performed. Among them, the microlens having the diameter of 3 ${\mu}m$ and the height of 1.5 ${\mu}m$ shown the best result was chosen, and then, optimized microlens was formed on a GaN template using conventional semiconductor process. Various microstructures were proposed to improve the light extraction efficiency (LEE) of the VLED for the simulation. The LEE was simulated using LightTools based on a Monte Carlo ray tracing. The microstructures with hemisphere, cone, truncated and cylinder pattern having diameter of 3 ${\mu}m$ were employed on the top layer of the VLED respectively. The improvement of the LEE by using the microstructure is 87% for the hemisphere, 77% for the cone, 53% for the truncated, 21% for the cylinder, compared with the LEE of the flat surface at the reflectance of 85%. The LEE was increased by 88% at the height of 1.5 ${\mu}m$, compared with the LEE of the flat surface. We found that the microlens on the top layer is the most suitable for increasing the LEE. In order to apply the proposed microlens on n-GaN surface, we fabricated microlens on a GaN template. A photoresist array having hexagonal-closed packed microlens was fabricated on the GaN template. Then, optimization of etching the GaN template was performed using a dry etching process with ICP-RIE. The dry etching carried out using a gas mixture of Cl2 and Ar, each having a flow rate of 16 sccm and 10 sccm, respectively with RF power of 50 W, ICP power of 900 W and chamber pressure of 2 mTorr was the optimum etching condition as shown in Fig. 2(a).

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.12
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• pp.56-62
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• 2013

We present a rectifier for wireless power transmission using multiplier configuration in layout for MOSFETs which works at 13.56 MHz, designed to fit in CMOS process where conventionally used diodes are replaced with the cross-coupled MOSFETs. Full bridge rectifier structure without comparators is employed to reduce current consumption and to be working up to higher frequency. Multiplier configuration designed in layout reduces time delay originated from parasitic series resistance and shunt capacitance at each finger due to long connecting layout, leading to fast transition from on-state to off-state cross-coupled circuit structure and vice versa. The power conversion efficiency is significantly increased due to this fast transition time. The rectifier is fabricated in $0.11{\mu}m$ CMOS process, RF to DC power conversion efficiency is measured as 86.4% at the peak, and this good efficiency is maintained up to 600 MHz, which is, to our best knowledge, the highest frequency based on cross-coupled configuration.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.1
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• pp.68-74
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• 2018

All transparent UV photodetector based on ZnO was fabricated with structure of NiO/ZnO/$SnO_2$/ITO by using RF and DC magnetron sputtering system. ZnO was deposited with 4 inch ZnO target (purity 99.99%) for a quality film. In order to build p-n junction up, p-type NiO was formed on n-type ZnO by using reactive sputtering method. The indium tin oxide (ITO) which is transparent conducting oxide (TCO) was applied as a transparent electrode for transporting electrons. To improve the UV photodetector performance, a functional $SnO_2$ layer was selected as an electron transporting and hole blocking layer, which actively controls the carrier movement, between ZnO and ITO. The photodetector (NiO/ZnO/$SnO_2$/ITO) shows transmittance over 50% as similar as the transmittance of a general device (NiO/ZnO/ITO) due to the high transmittance of $SnO_2$ for broad wavelengths. The functional $SnO_2$ layer for band alignment effectively enhances the photo-current to be $15{\mu}A{\cdot}cm^{-2}$ (from $7{\mu}A{\cdot}cm^{-2}$ of without $SnO_2$) with the quick photo-responses of rise time (0.83 ms) and fall time (15.14 ms). We demonstrated the all transparent UV photodetector based on ZnO and suggest the route for effective designs to enhance performance for transparent photoelectric applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.189-193
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• 2005

In this paper, we propose a direct conversion double-balanced down-converter fer MB-OFDM W system, which is implemented using $0.18\;{\mu}m$ CMOS technology and its measurement results are shown. The proposed down-converter adopts a resistive current-source instead of general transconductance stage using MOS transistor to achieve wideband characteristics over RF input frequency band $3\~5\;GHz$ with good gain flatness. The measured conversion gain is more than +3 dB, and gain flatness is less than 3 dB for three UWB channels. The dc consumption of this work is only 0.89 mA from 1.8 V power supply, leading to the low-power W application.

• Proceedings of the Ginseng society Conference
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• 1987.06a
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• pp.29-37
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• 1987

This study was devised to observe the cytotoxlc activities of petroleum-ether extract of Panax ginseng root(crude Gx) and its partially purified fraction from silicon acid column chromatography(7:3 CX) against sarcoma-180(5-180) and Walker carcinosarcoma 256(Walker 256) in vivo, and murine leukemic lymphocytes(L1210) and human rectal cancer cell(HRT-18) and human colon cancer cells(HT-29 and HCT-48) in vitro . Each cell-line was cultured in medium containing serial concentrations of the crude Gx or 7:3 Gx in vitro. A highly lipid soluble compound in the extract of Panax ginseng root was cytocidal to murine leukemic cells and human colon and rectal cancer cells in vitro In the meantime, ginseng saponin derivatives did not cytotoxic effects at its corresponding concentration. The growth rates of the cancer cells in medium containing ginseng extracts were inhibited gradually to a significant degree roughly in proportion to the increase of the extract concentration. The cytotoxic activity of 7:3 Gx was about 3 times more potent than that of crude Gx, one unit of cytotoxic activity against L121f cells being equivalent to 2.54$\mu\textrm{g}$ and 0.88 $\mu\textrm{g}$ for the crude Gx and 7:3 Gx, respectively. The Rf value of the active compound on silica -gel thin layer chromatography with petroleum-ether/ethyl ether/acetic acid mixture (90:10:1, v/v/v) as a developing solvent was 0.23. The survival times of mice inoculated with S-180 cells were extended about 1.5 to 2 times by the 7:3 Gx treatment compared with their control group. The significantly decreased hemoglobin values of rats after inoculation with Walker 256 were recovered to normal range by oral administration of the crude Gx. The synthetic levels of protein, DNA and RNA in human colon and rectal cancer cells were significantly diminished by treatment with the crude Gx, which can explain a part of the origin of its anticancer activity.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.55-57
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• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.623-624
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• 2006

In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

• Journal of IKEEE
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• v.14 no.4
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• pp.257-262
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• 2010

We design a CMOS front-end with wide variable gain and low power consumption for 5.25 GHz band. To obtain wide variable gain range, a p-type metal-oxide-semiconductor field-effect transistor (PMOS FET) in the low noise amplifier (LNA) section is connected in parallel. For a mixer, single balanced and folded structure is employed for low power consumption. Using this structure, the bias currents of the transconductance and switching stages in the mixer can be separated without using current bleeding path. The proposed front-end has a maximum gain of 33.2 dB with a variable gain range of 17 dB. The noise figure and third-order input intercept point (IIP3) are 4.8 dB and -8.5 dBm, respectively. For this operation, the proposed front-end consumes 7.1 mW at high gain mode, and 2.6 mW at low gain mode. The simulation results are performed using Cadence RF spectre with the Taiwan Semiconductor Manufacturing Company (TSMC) $0.18\;{\mu}m$ CMOS technology.)

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1574-1576
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• 2003

Carbon nanotubes (CNTs) were grown on the TiN-coated silicon substrate with different thickness of Ni and Co catalysts layer at $600^{\circ}C$ using inductively coupled plasma-chemical vapor deposition (ICP-CVD). The Ni and Co catalysts were formed using the RF magnetron sputtering system with various deposition times. It was found that the growth of CNTs was strongly influenced by the surface morphology of Ni and Co catalysts. With increasing deposition time, the thickness of catalysts increased and the grain boundary size of catalysts increased. The surface morphology of catalysts and CNTs were elucidated by SEM. The Raman spectrum further confirmed the graphitic structure of the CNTs. The turn-on field of CNTs grown on Ni and Co catalysts was about 2.7V/pm and 1.9V/pm respectively. Field emission current density of CNTs grown on Ni and Co catalysts was measured as $11.67mA/cm^2$ at $5.5V/{\mu}m$ and $1.5mA/cm^2$ at $5.5V/{\mu}m$ respectively.