• Journal of the Computational Structural Engineering Institute of Korea
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• v.20 no.3
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• pp.287-292
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• 2007

In general, the response of bulk material is independent of its size when it comes to considering classical elasticity theory. Because the surface to bulk ratio of the large solids is very small, the influence of surface can be negligible. But the surface effect plays important role as the surface to bulk ratio becomes larger, that is, the contribution of the surface effect must be considered in nano-size elements such as thin film or beam structure. Molecular dynamics computation has been a conventional way to analyze these ultra-thin structures but this method is limited to simulate on the order of $10^6{\sim}10^9$ atoms for a few nanoseconds, and besides, very time consuming. Analysis of structures in submicro to micro range(thin-film, wire etc.) is difficult with classical molecular dynamics due to the restriction of computing resources and time. Therefore, in this paper, the continuum-based method is considered to simulate the overall physical and mechanical properties of the structures in nano-scale, especially, for the thin-film.

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.2 no.2
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• pp.123-131
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• 2016

Increasing clinical demand for carbon-11 labeled radiopharmaceuticals has triggered technological advances in fields of radiochemistry and automated modules. Even though carbon-11 has a short half-life ($t_{1/2}=20.4min$), the consecutive second production of carbon-11 labeled radiopharmaceutical in one $^{11}C$-synthetic module should be delayed at least over 4 h to avoid the high radiation exposure. We herein aimed to produce two different carbon-11 labeled radiopharmaceuticals ([$^{11}C$]PIB and [$^{11}C$]methionine) by sharing of [$^{11}C$]methylation source in one $^{11}C$-synthetic module. The synthesis of $^{11}C$-labeling reagents ($[^{11}C]CH_3I$ or $[^{11}C]CH_3OTf$) is fully automated using the commercial TRACERlab $FX_{C-pro}$ module and is readily adaptable to $^{11}C$-labeling reactor for [$^{11}C$]PIB as well as another $^{11}C$-labeling apparatus for [$^{11}C$]methionine via the three-way valve. After completing the [$^{11}C$]PIB production, the re-synthesized $[^{11}C]CH_3I$ was passed through the three-way valve connected the polyetheretherketone (PEEK) line and loaded into the C18 Sep-Pak cartridge including the methionine precursor. The labeled product [^${11}C$]methionine was purified by a simple cartridge separation and reformulated into saline. The radiochemical yield of [$^{11}C$]PIB and [$^{11}C$]methionine were $5.3{\pm}0.6%$ and $18.7{\pm}0.8%$ (n.d.c.), respectively, with over 97% of radiochemical purity. The specific activity of [$^{11}C$]PIB was over $110GBq/{\mu}mol$. Total production time of two radiopharmaceuticals needs about 2 h from $1^{st}$ beam irradiation including quality control tests. Final [$^{11}C$]PIB and [$^{11}C$]methionine were satisfied all quality control test standards.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.265-265
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• 2012

The adsorption of molecular $NH_3$ on rutile $TiO_2(110)-1{\times}1$ surfaces was investigated using a temperature-programmed desorption (TPD) technique combined with a molecular beam apparatus. A quantitative investigation into the TPD spectra of $NH_3$ was made for $NH_3$ adsorbed on two kinds of rutile $TiO_2(110)-1{\times}1$ surfaces with the oxygen vacancy ($V_O$) concentration of ~0% (p-$TiO_2(110)$) and ~5% (r-$TiO_2(110)$), respectively. On both surfaces, non-dissociative adsorption of $NH_3$ was inferred from a quantitative analysis on the amount of adsorbed $NH_3$ and those desorbed. With increasing coverage, the monolayer desorption feature shifted from 400 K toward lower temperatures until it saturates at 160 K, suggesting a repulsive nature in the interaction between $NH_3$ molecules. At the very low coverage regime, the desorption features were found to extend up to 430 K and 400 K on p-$TiO_2(110)$ and p-TiO(110), respectively. As a result, the saturation coverage of monolayer of $NH_3$ was higher on the p-$TiO_2(110)$ surface than on the p-TiO(110) by about 10%. The desorption energy ($E_d$) of $NH_3$ obtained by inversion of the Polanyi-Wigner equation indicated that the difference between the $E_d$'s of $NH_3$ (that is, $E_d(on\;p-TiO_2(110)$) - $E_d$(on p-TiO(110)) was 14 kJ/mol at ${\theta}(NH_3)=0$ and decreased to 0 as the coverage approached to a monolayer. The observed adsorption behavior of $NH_3$ was interpreted using an interaction model between $NH_3$ and surface defects on $TiO_2$ such as VO's and $Ti^{3+}$ interstitials.

• Korean Journal of Optics and Photonics
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• v.16 no.6
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• pp.535-541
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• 2005

We report on the development of a passively mode-locked near-infrared femtosecond laser with Cr:YAG crystal that operates near room temperature. The laser wavelength could easily be tuned by using only the internal prism pair over 110 nm from 1400 nm to 1510 nm in cw and over about 30 nm in mode-locked operation, respectively Maximum cw output powers of 810 mW were obtained with $1.5 \%$ output coupler for absorbed pump powers of 7.6 W. For compensation of the internal group velocity dispersion, an IR graded prism pair was used. The Cr:YAG laser delivered nearly Fourier-transform limited pulses with a pulse duration as short as 64 fs at 100 MHz repetition rate. In the mode-locked regime, the laser was operating at 1510 nm with a spectral bandwidth of 44 nm. In order to avoid unstable mode-locking and power instabilities, self-built tubes were inserted into the beam path in the resonator and purged with N2 gas. Finally, output powers of the Cr:YAG laser were optimized to 250 mW fer long time stable mode-locked operation.

• Food Engineering Progress
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• v.14 no.1
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• pp.49-53
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• 2010

Surface plasmon resonance (SPR) which is utilized in thin film refractometry-based sensors has been concerned on measurement of physical, chemical and biological quantities because of its high sensitivity and label-free feature. In this paper, an application of SPR to detection of alcohol content in wine and liquor was investigated. The result showed that SPR sensor had high potential to evaluate alcohol content. Nevertheless, food industry may need SPR sensor with higher sensitivity. Herein, we introduced a nano-technique into fabrication of SPR chip to enhance SPR sensitivity. Using Langmuir-Blodgett (LB) method, gold film with nano-structured surface was devised. In order to make a new SPR chip, firstly, a single layer of nano-scaled silica particles adhered to plain surface of gold film. Thereafter, gold was deposited on the template by an e-beam evaporator. Finally, the nano-structured surface with basin-like shape was obtained after removing the silica particles by sonication. In this study, two types of silica particles, or 130 nm and 300 nm, were used as template beads and sensitivity of the new SPR chip was tested with ethanol solution, respectively. Applying the new developed SPR sensor to a model food of alcoholic beverage, the sensitivity showed improvement of 95% over the conventional one.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.161-161
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• 2012

본 연구에서는 InGaAs을 이용한 테라헤르쯔(THz) 발생과 검출 특성을 GaAs에 의한 특성과 비교, 조사하였다. 고온성장(HTG, $530^{\circ}C$) InGaAs를 이용하여 photo-Dember (pD) 효과(표면방출)에 의한 THz 발생 특성을 조사하였으며, THz 검출 특성에는 저온성장(LTG, $530^{\circ}C$) InGaAs: Be을 이용하였다. HTG-InGaAs 기판 위에 패턴한 금속전극 (Ti/Au, ${\sim}500{\times}500{\mu}m$)의 가장자리에 Ti: Sapphire fs 펄스 레이저(30 ps/90 MHz)를 조사하여 LTG-GaAs 수신기(Rx)로 THz를 검출, 전류신호(a)와 Fourier transform (FT) 주파수 스펙트럼(b)을 얻었다. HTG-InGaAs에서 얻은 파형은 SI-GaAs에서와 거의 비슷한 모양이었으나, 주파수 범위(0.5~2 THz)는 SI-GaAs의 1~3 THz 보다 좁고 FT 스펙트럼의 세기는 약 1/8 정도로 낮았다. LTG-InGaAs 수신기 (Rx)의 안테나는 쌍극자 ($5/20{\mu}m$) 형태를 가지고 있으며, SI-GaAs Tx로 발생시킨 광원을 사용하여 THz 영역의 검출 특성을 조사하였다. HTG-InGaAs Tx 및 LTG-InGaAs Rx의 이득은 각각 약 $5{\times}10^{-8}$ A/W과 $2.5{\times}10^{-8}$ A/W인 것으로 분석되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.242-242
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• 2016

Magnetite, Fe3O4, is a ferrimagnet with a cubic inverse spinel structure and exhibits a metal-insulator, Verwey, transition at about 120 K.[1] It is predicted to possess as half-metallic nature, 100% spin polarization, and high Curie temperature (850 K). Cobalt ferrite is one of the most important members of the ferrite family, which is characterized by its high coercivity, moderate magnetization and very high magnetocrystalline anisotropy. It has been reported that the CoFe2O4/Fe3O4 bilayers represent an unusual exchange-coupled system whose properties are due to the nature of the oxide-oxide super-exchange interactions at the interface [2]. In order to evaluate the effect of interface interactions on magnetic and transport properties of ferrite and cobalt ferrite, the CoFe2O4/Fe3O4 superlattices on MgO (100) substrate have been fabricated by molecular beam epitaxy (MBE) with the wave lengths of 50, and $200{\AA}$, called $25{\AA}/25{\AA}$ and $100{\AA}/100{\AA}$, respectively. Streaky RHEED patterns in sample $25{\AA}/25{\AA}$ indicate a very smooth surface and interface between layers. HR-TEM image show the good crystalline of sample $25{\AA}/25{\AA}$. Interestingly, magnetization curves showed a strong antiferromagnetic order, which was formed at the interfaces.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.277.2-277.2
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• 2016

현재 화합물 반도체 나노구조는 광학적, 전기적 특성을 기반으로 하는 단전자 트랜지스터, 적외선 검출기, 레이저, 태양전지와 같은 분야에 응용하기 위한 많은 연구가 진행되고 있다. 특히 양자점은 3차원으로 구속되어 있는 상태 밀도를 갖고 있어 레이저 응용 시 낮은 문턱 전류 밀도, 높은 이득, 높은 열적 안정성을 기대되고 있지만 양자점의 운반자 수집과 열적 안정성의 한계가 여전히 존재한다. 이러한 문제를 해결하기 위해 다양한 방법이 연구되고 있으며, 그 중 단층 양자점에 비해 운반자 수집과 열적 안정성이 뛰어난 다층 양자점이 결합된 구조에 대한 연구가 활발히 이루어지고, 다층으로 성장된 양자점 구조는 양자점의 크기 분포 조절이 용이하고 양자점 층간의 전기적 결합력이 강한 특성이 있다. 본 연구에서는 분자 선속 에피 성장법(Molecular Beam Epitaxy; MBE)과 원자 층 교대 성장법(Atomic Layer Epitaxy; ALE)으로 CdTe/ZnTe 다층 양자점을 ZnTe 장벽층의 두께를 변화하면서 성장 후 광학적 특성을 연구하였다. 저온 광루미네센스 측정(Photoluminescence; PL)을 통하여 ZnTe 장벽층 두께가 증가할수록 양자점의 PL 피크가 높은 에너지로 이동함을 알 수 있었는데, 이는 ZnTe 장벽층의 두께가 증가할수록 양자점 층간의 결합력이 감소하면서 양자점의 크기가 작아졌기 때문이다. 그리고 ZnTe 장벽층의 두께가 증가할수록 PL 세기가 커지는 것을 알 수 있었는데, 이는 ZnTe 장벽층의 두께가 증가할수록 더 많은 운반자가 양자점으로 구속되기 때문이다. 또한 온도 의존 광루미네센스 측정 결과 ZnTe 장벽층의 두께가 증가할수록 열적 활성화 에너지가 커지는 것을 관찰하였고, 시분해 광루미네센스 측정을 통해 ZnTe 장벽층의 두께에 따른 운반자 동역학에 대해 연구하였다. 이와 같은 결과 CdTe/ZnTe 다층 양자점 구조에서 장벽층의 두께에 따른 광학적 특성에 대해 이해 할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.194.2-194.2
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• 2015

본 논문에서는 InP 기판에 자발형성법 (Self-assembled Mode)으로 성장한 InAs/InAlGaAs 양자점(Quantum Dots)의 외부 열처리 온도에 따른 광학적 특성을 논의한다. 분자선증착기 (Molecular Beam Epitaxy, VH80MBE)로 5주기 적층구조를 갖는 InAs/InAlGaAs 양자점 시료 (기준시료)를 성장 후 온도 의존성 및 여기광세기 의존성 포토루미네슨스 (photoluminescence, PL) 분광법으로 기본특성을 평가하였다. 양자점 시료를 $500{\sim}800^{\circ}C$에서 열처리를 수행하고 광학적 특성을 열처리 전과 비교하여 분석하였다. $550^{\circ}C$에서 열처리한 InAs/InAlGaAs 양자점 시료의 저온 (11K) PL 파장은 1465 nm를 보였으며, 이는 열처리를 하지 않은 기준시료의 1452 nm 보다 13 nm 장파장으로 이동하였다. 열처리 온도가 $700^{\circ}C$ 이상인 경우, 양자점 PL 파장이 다시 단파장으로 이동하는 현상을 보였지만 여전히 열처리하지 않은 기준시료보다 장파장을 나타내었다. $700^{\circ}C$에서 열처리한 양자점 시료의 저온 PL 광세기는 기준시료보다 15.5배 더 크게 나타났으며, 주변 온도가 증가할수록 더디게 감소하는 것을 확인할 수 있었다. 온도의존성 PL로부터 구한 활성화에너지 (Activation Energy)는 $700^{\circ}C$ 열처리 온도의 경우 175.9 meV를 나타내었다. InAs/InAlGaAs 양자점 시료의 열처리 온도에 따른 광특성 변화를 InAs 양자점과 InAlGaAs 장벽층 계면에서 III족 원소인 In, Al 및 Ga의 상호확산과 결함이 완화되는 현상으로 해석할 수 있다.