• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.73-74
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• 2007

We fabricated strained-SOI(sSOI) n-/p-MOSFETs and investigated the electron/hole mobility characteristics. The subthreshold characteristics of sSOI MOSFETs were similar to those of conventional SOI MOSFET. However, The electron mobility of sSOI nMOSFETs was larger than that of the conventional SOI nMOSFETs. These mobility enhancement effects are attributed to the subband modulation of silicon conduction band.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.518-524
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• 2014

The substrate doping concentration dependence of strain-enhanced electron mobility in (110)/<110> nMOSFETs is investigated by using a self-consistent Schr$\ddot{o}$dinger-Poisson solver. The electron mobility model includes Coulomb, phonon, and surface roughness scattering. The calculated results show that, in contrast to (100)/<110> case, the longitudinal tensile strain-induced electron mobility enhancement on the (110)/<110> can be increased at high substrate doping concentration.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.264-275
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• 2008

Electron mobility has been investigated theoretically in undoped double-gate (DG) MOSFETs of different channel architectures: a relaxed-Si DG SOI, a strained-Si (sSi) DG SSOI (strained-Si-on-insulator, containing no SiGe layer), and a strained-Si DG SGOI (strained-Si-on-SiGe-on-insulator, containing a SiGe layer) at 300K. Electron mobility in the DG SSOI device exhibits high enhancement relative to the DG SOI. In the DG SGOI devices the mobility is strongly suppressed by the confinement of electrons in much narrower strained-Si layers, as well as by the alloy scattering within the SiGe layer. As a consequence, in the DG SGOI devices with thinnest strained-Si layers the electron mobility may drop below the level of the relaxed DG SOI and the mobility enhancement expected from the strained-Si devices may be lost.

• 한국전기전자재료학회논문지
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• 제20권11호
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• pp.939-942
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.

• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.695-698
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• 2008

We investigated the characteristics of Strained-Si-on-Insulator (sSOI) MOSFETs with 0.7% tensile strain. The sSOI MOSFETs have superior subthreshold swing under 70 mV/dec and output current. Especially, the electron and hole were increased in sSOI MOSFET. The electron and hole mobility in sSOI MOSFET were 286$cm^2/Vs$ and 151$cm^2/Vs$, respectively. The carrier mobility enhancement is due to the subband splitting by 0.7% tensile strain.

• 한국정보처리학회논문지
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• 제7권11S호
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• pp.3714-3722
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• 2000

인터넷에서 단말기의 이동성을 보장하기 위한 연구는 크게 매크로 이동성과 마이크로 이동성의 두 가지로 분류 가능하다. 매크로 이동성의 경우 IETF의 RFC 2002로 수렴되는 추세이나 마이크로 이동성의 경우 다양한 방안들의 논의 중이다. 본 논문에서는 기존의 Mobile IP에 LA(Local Agent) 개념을 도입하여 이동 노드의 빈번한 지역 핸드오프를 LA에 전담시켜 HA가 관여하지 않도록 하는 기법을 제안하였다. 따라서 최대 핸드오프 지연을 MN과 MN의 HA간 거리의 영향을 받지않고 일전 수준으로 제한할 수 있다. 등록비용과 핸드오프 지연으로 인한 패킷 손실 확률 측면에서 기존 Mobile IP와 LA 개념을 적용했을 경우에 대한 분석을 수행함으로써 제안된 모델이 Mobile IP의 성능향상을 시킬 수 있음을 검증하였다.

• Journal of the Korean Physical Society
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• 제73권9호
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• pp.1329-1333
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• 2018

We investigated the mechanism of mobility enhancement after the dehydrogenation process in polycrystalline silicon (poly-Si) thin films. The dehydrogenation process was performed by using an in-situ CVD chamber in a $N_2$ ambient or an ex-situ furnace in air ambient. We observed that the dehydrogenated poly-Si in a $N_2$ ambient had a lower oxygen concentration than the dehydrogenated poly-Si annealed in an air ambient. The in-situ dehydrogenation increased the (111) preferred orientation of poly-Si and reduced the oxygen concentration in poly-Si thin films, leading to a reduction of the trap density near the valence band. This phenomenon gave rise to an increase of the field-effect mobility of the poly-Si thin film transistor.

• 한국통신학회논문지
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• 제28권6B호
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• pp.563-572
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• 2003

차세대 이동 통신망 환경에 Mobile IP 방식을 적용하였을 경우 빈번히 발생하는 핸드오프로 인한 재등록 과정의 오버헤드 증가와 등록 시의 지연으로 인한 패킷 손실 증가 등의 마이크로 이동성(micro-mobility) 문제가 발생할 수 있다. 본 논문에서는 이 문제의 해결을 위해 IP 기반 무선 액세스 망에서 마이크로 이동성을 효율적으로 지원하는 ANMM(Access Network Mobility Management) 방식을 제안한다. ANMM 방식은 액세스 망 내에서 노드가 이동할 때 발생하는 핸드오프 등록 과정을 액세스 망 자체적으로 처리하여 등록 지연과 시그널링 오버헤드를 감소시킨다. 또한 핸드오프 시의 무선 구간에서의 시그널링을 최소화하여 무선 자원의 낭비를 줄일 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.113-114
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• 2007

Hole mobility characteristics of single surface channel and dual channel Si/SiGe structure are compared, where the former one consists of a relaxed SiGe buffer layer and a tensile strained Si layer on top, and for dual channel structure a compressively strained SiGe layer is inserted between them. Due to the difference of hole mobility enhancement factors of layers between them, hole mobility characteristics with respect to the Si cap thickness shows the opposite tend. Hole mobility increases with thicker Si cap for single channel structure, whereas it decreases with thicker Si cap for dual channel structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.293-293
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• 2009