• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.331-341
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• 2013

In the present work, the effect of the gate-to-drain capacitance ($C_{gd}$) on the noise performance of a symmetric tied-gate $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ double-gate HEMT is studied using an accurate charge control based approach. An analytical expression for the gate-to-drain capacitance is obtained. In terms of the intrinsic noise sources and the admittance parameters ($Y_{11}$ and $Y_{21}$ which are obtained incorporating the effect of $C_{gd}$), the various noise performance parameters including the Minimum noise figure and the Minimum Noise Temperature are evaluated. The inclusion of gate-to-drain capacitance is observed to cause significant reduction in the Minimum Noise figure and Minimum Noise Temperature especially at low values of drain voltage, thereby, predicting better noise performance for the device.

• 전자공학회논문지A
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• 제32A권3호
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• pp.110-117
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• 1995

New formulas for the minimum noise figure and the optimum source impedance of microwave FETs are derived using the noise equivalent circuits obtained from the steady-state Nyquist theorem for multi-terminal semiconductor devices. The derived formulas manifest the relationships between the noise sources and the physical parameters of a noise equivalent circuit. Furthermore the formulas can explain the effect of gate leakage current on the minimum noise figure and the optimum source impedance. comparisons with the published experimental data confirm the validity and usability of our formula.

• ETRI Journal
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• 제18권3호
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• pp.171-179
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• 1996

Fully passivated low noise AlGaAs/InGaAs/GaAs pseudomorphic (PM) HEMT with wide head T-shaped gates were fabricated by dose split electron beam lithography (DSL). The dimensions of gate head and footprint were optimized by controlling the splitted pattern size, dose, and spaces of each pattern. We obtained stable T-shaped gate of $0.15{\mu}m$ gate length with $1.35{\mu}m-wide$ head. The maximum extrinsic transconductance was 560 mS/mm. The minimum noise figure measured at 18 GHz at $V_{ds}=2V andI_{ds}=17mA$ was 0.41 dB with associated gain of 8.19 dB. At 12 GHz, the minimum noise figure and an associated gain were 0.26 and 10.25 dB, respectively. These noise figures are the lowest values ever reported for GaAs-based HEMTs. These results are attributed to the extremely low gate resistance of wide head T-shaped gate having a ratio of the head to footprint dimensions larger than 9.

• 전기전자학회논문지
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• 제23권3호
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• pp.917-924
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• 2019

This paper presents a wideband low noise amplifier (LNA) that is suitable for LTE-Advanced and 5G communication standards employing carrier aggregation (CA). The proposed LNA encompasses a common input stage and a dual output second stage with a buffer at each distinct output. This architecture is targeted to operate in both intra-band (contiguous and non-contiguous) and inter-band CA. In the proposed design, the input and second stages employ a gm enhancement with resistive feedback technique to achieve self-biasing, enhanced gain, wide bandwidth as well as reduced noise figure of the proposed LNA. An up/down power controller controls the single input single out (SISO) and single input multiple outputs (SIMO) modes of operation for inter-band and intra-band operations. The proposed LNA is designed with a 45nm CMOS technology. For SISO mode of operation, the LNA operates from 0.52GHz to 4.29GHz with a maximum power gain of 17.77dB, 2.88dB minimum noise figure and input (output) matching performance better than -10dB. For SIMO mode of operation, the proposed LNA operates from 0.52GHz to 4.44GHz with a maximum voltage gain of 18.30dB, a minimum noise figure of 2.82dB with equally good matching performance. An $IIP_3$ value of -6.7dBm is achieved in both SISO and SIMO operations. with a maximum current of 42mA consumed (LNA+buffer in SIMO operation) from a 1.2V supply.

• 한국정보처리학회논문지
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• 제6권1호
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• pp.159-166
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• 1999

본 논문에서는 개인휴대통신(PCS)의 최소 규격인 J-STD-018을 기준으로 하여 수신기의 수신감도, 단일톤 둔감도, 상호변조 스퓨리어스에 의한 응답감쇄 규격에서 각각 잡음지수와 제 3고조파 차담점을 구하고 시뮬레이션을 통하여 분석하였다. 시뮬레이션 결과 수신감도 규격에서는 전체 잡음지수가 5.99dB이고 제 3고조파 차단점은 -33.979dBm이었다. 또한 단일톤 둔감도 및 상호 변조 스퓨리어스에 의한 응답감쇄 규격에는 전제 잡음지수가 0.367dBm이고 제 3고조파 차단점은 6.989 이 증가되었다. 이것은 잡음지수보다 제 3고조파 차단점이 훨씬 증가 되므로 간섭톤과 밀접한 관계가 있는 소자인 Mixer는 제 3고조파 차단점을 높게 규정하고 IF SAW 필터의 중심 주파수로부터 1.25MHz와 2.05MHz지점인 곳에 감쇄가 456dB이상 되어야 함을 보였다.

• 한국통신학회논문지
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• 제10권3호
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• pp.135-146
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• 1985

임펄스성 잡음과 동일 채널 간섭이 존재하는 환경하에서 페이딩채널을 통과하는 MSK(Minimum Shift Keying)신호의 오율의 일반식을 유도하여 반송파 대 잡음 전력비(CNR), 반송파 대 간섭파 전력비(CIR), 임펄스지수, 가우스성 잡음 대 임펄스성 잡음 전력비 및 페이딩 지수를 파라미터로 하여 시스템의 성능을 오율적 측면에서 평가했다. 해석겨로가, 강한 페이딩하에서는 에러가 주로 가우으성 잡음에 의하여 발생되고 페이딩이 약해지면 가우스성 잡음에 의한 영향이 크게 줄어드는 반면 임펄스성 잡음의 영향은 그다지 줄지 않는다는 것을 알아냈다. 또 신호가 페이딩을 받게 되면 미약한 간섭파일지라도 수신 시스템의 성능을 크게 저하시킨다는 것을 알 수 있다.

• 전자공학회논문지C
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• 제34C권11호
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• pp.66-75
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• 1997

We derive the system design parameters to implement the receiving system for the PCS mobile station to satisfy the J-sTD-018 which is the PCS mobile station(MS) minimum performance. Also we analyze the system performance and intermodulation spurious due to the values of a device cause the system performance degradation, is proposed. The simulation shows the receiver's maximum system noise figure to satisfy the receiver selectivity is approximately 11 dB. While the MS noise figure is 10dB with system margin 1 dB, the minimum selectivity is -71 dB at 1.25MHz frequency offset from the carrier frequency. And the input 3rd order intercept point of the MS class I and the MS class II~V is -9.5 dBm and -14dBm respectively. When the interference power level at the receiver is small, the receiver has better performance as we increase the gain of the LNA. However, when the interference level at the receiver is large, the receiver performance is heavily affected by the spurious as we increase the gain of the LNA. Thus, we proved the effectiveness of the LNA On/Off switching technique as to reduce the effect of the spurious.

• 한국정보통신학회논문지
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• 제25권6호
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• pp.853-856
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• 2021

In this paper, a low noise amplifier having high gain and low noise by using input and inter stage matching circuits has been designed. A current-reused two-stage common-source topology is adopted, which can obtain high gain and low power consumption. Deterioration of noise characteristics according to the source inductive degeneration matching is compensated by adopting additional matching circuits. Moreover trade-offs among noise, gain, linearity, impedance matching, and power dissipation have been considered. In this design, 0.18-mm CMOS process is employed for the simulation. The simulated results show that the designed low noise amplifier can provide high power gain and low noise characteristics.

• 한국전자통신학회논문지
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• 제7권1호
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• pp.15-20
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• 2012

본 논문에서는 디지털 마이크로파 통신 시스템 수신기의 동작범위(Dynamic Range) 향상을 위한 설계 방법을 K-band FEM(Front-End Module)에 적용하여 설계 및 분석하였다. 동작범위를 광범위하게 설계하기 위해 저 잡음 증폭기(LNA)의 잡음지수를 최소화하여 증폭된 입력신호 레벨을 최소화하는 방법을 제안하였으며, 주파수 변환은 높은 선택도(Q)와 안정도가 높은 위상고정 유전체 발진기(PL-DRO) 및 변환이득을 가지는 능동믹서로 구성하였다. 각각의 모듈을 집적화하여 측정한 결과 약 54dB의 변환이득(CG)과 1.3dB의 전제 잡음지수(NF)를 나타내었다.

• 디지털산업정보학회논문지
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• 제20권2호
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• pp.63-74
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• 2024

This Paper presents a resistive wideband fully differential low-noise amplifier (LNA) designed using a noise-cancellation technique for TV tuner applications. The front-end of the LNA employs a cascode common-gate (CG) configuration, and cross-coupled local feedback is employed between the CG and common-source (CS) stages. The moderate gain at the source of the cascode transistor in the CS stage is utilized to boost the transconductance of the cascode CG stage. This produces higher gain and lower noise figure (NF) than a conventional LNA with inductor. The NF can be further optimized by adjusting the local open-loop gain, thereby distributing the power consumption among the transistors and resistors. Finally, an optimized DC gain is obtained by designing the output resistive network. The proposed LNA, designed in SK Hynix 180 nm CMOS, exhibits improved linearity with a voltage gain of 10.7 dB, and minimum NF of 1.6-1.9 dB over a signal bandwidth of 40 MHz to 1 GHz.