• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.331-341
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• 2013

In the present work, the effect of the gate-to-drain capacitance ($C_{gd}$) on the noise performance of a symmetric tied-gate $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ double-gate HEMT is studied using an accurate charge control based approach. An analytical expression for the gate-to-drain capacitance is obtained. In terms of the intrinsic noise sources and the admittance parameters ($Y_{11}$ and $Y_{21}$ which are obtained incorporating the effect of $C_{gd}$), the various noise performance parameters including the Minimum noise figure and the Minimum Noise Temperature are evaluated. The inclusion of gate-to-drain capacitance is observed to cause significant reduction in the Minimum Noise figure and Minimum Noise Temperature especially at low values of drain voltage, thereby, predicting better noise performance for the device.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.110-117
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• 1995

New formulas for the minimum noise figure and the optimum source impedance of microwave FETs are derived using the noise equivalent circuits obtained from the steady-state Nyquist theorem for multi-terminal semiconductor devices. The derived formulas manifest the relationships between the noise sources and the physical parameters of a noise equivalent circuit. Furthermore the formulas can explain the effect of gate leakage current on the minimum noise figure and the optimum source impedance. comparisons with the published experimental data confirm the validity and usability of our formula.

• ETRI Journal
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• v.18 no.3
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• pp.171-179
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• 1996

Fully passivated low noise AlGaAs/InGaAs/GaAs pseudomorphic (PM) HEMT with wide head T-shaped gates were fabricated by dose split electron beam lithography (DSL). The dimensions of gate head and footprint were optimized by controlling the splitted pattern size, dose, and spaces of each pattern. We obtained stable T-shaped gate of $0.15{\mu}m$ gate length with $1.35{\mu}m-wide$ head. The maximum extrinsic transconductance was 560 mS/mm. The minimum noise figure measured at 18 GHz at $V_{ds}=2V andI_{ds}=17mA$ was 0.41 dB with associated gain of 8.19 dB. At 12 GHz, the minimum noise figure and an associated gain were 0.26 and 10.25 dB, respectively. These noise figures are the lowest values ever reported for GaAs-based HEMTs. These results are attributed to the extremely low gate resistance of wide head T-shaped gate having a ratio of the head to footprint dimensions larger than 9.

• Journal of IKEEE
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• v.23 no.3
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• pp.917-924
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• 2019

This paper presents a wideband low noise amplifier (LNA) that is suitable for LTE-Advanced and 5G communication standards employing carrier aggregation (CA). The proposed LNA encompasses a common input stage and a dual output second stage with a buffer at each distinct output. This architecture is targeted to operate in both intra-band (contiguous and non-contiguous) and inter-band CA. In the proposed design, the input and second stages employ a gm enhancement with resistive feedback technique to achieve self-biasing, enhanced gain, wide bandwidth as well as reduced noise figure of the proposed LNA. An up/down power controller controls the single input single out (SISO) and single input multiple outputs (SIMO) modes of operation for inter-band and intra-band operations. The proposed LNA is designed with a 45nm CMOS technology. For SISO mode of operation, the LNA operates from 0.52GHz to 4.29GHz with a maximum power gain of 17.77dB, 2.88dB minimum noise figure and input (output) matching performance better than -10dB. For SIMO mode of operation, the proposed LNA operates from 0.52GHz to 4.44GHz with a maximum voltage gain of 18.30dB, a minimum noise figure of 2.82dB with equally good matching performance. An $IIP_3$ value of -6.7dBm is achieved in both SISO and SIMO operations. with a maximum current of 42mA consumed (LNA+buffer in SIMO operation) from a 1.2V supply.

• The Transactions of the Korea Information Processing Society
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• v.6 no.1
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• pp.159-166
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• 1999

In this paper, we examined noise figure and the 3rd order intercept point in sensitivity single tone desensitization, and response attenuation by intermodulation spurious of receiver and also analyzed them through simulation based on J-STD-0.18, which is the minimum specification of PCS mobile station. The result of simulation was as follows ; In sensitivity specification, the total noise figure was 5.99dB and the 3rd order intercept point was -33.979dB. Ins ingle tone desensitization and intermodulation spurious response attenuation specification, the total noise figure was 6.375dB and the 3rd order intercept point was -26.99dBm. When there is an interference tone, the nosie figure and the 3rd order intercept point have been increasedly 0.367dB respectively, compared wit that of no interference tone. Because the amount of increase in the 3rd order intercept point was highly raised more than that of noise figure, mixer, closely related to interference tone should be specified in high 3rd order intercept point. At a frequency spacing of 1.25MHz and 2.05MHz from center frequency in IF SAW filter, attenuation should be more than 45dB.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.10 no.3
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• pp.135-146
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• 1985

The error rate equation of MSK(Minimum Shift Keying) signal transmitted through the fading channel has been derived in the interference and impulsive noise environments. The error rate performance of MSK system have been evaluated and shown in figures as parameters of carrier-to-noise power ratio(CNR), carrier-to-interferer power ratio(CIR), impulsive index, the ratio of Gaussian noise power component to impulsive noise power component, and fading figure. The results show that, in the fading environment, the error is occurred more frequently by Gaussian noise in the deep fading, however in the shallow fading, impulsive noise is more dominant than Gaussian noise. And in thepresence of interference and fading, interferer deteriorates the MSK receiving system severely even if the interferer is weak.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.11
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• pp.66-75
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• 1997

We derive the system design parameters to implement the receiving system for the PCS mobile station to satisfy the J-sTD-018 which is the PCS mobile station(MS) minimum performance. Also we analyze the system performance and intermodulation spurious due to the values of a device cause the system performance degradation, is proposed. The simulation shows the receiver's maximum system noise figure to satisfy the receiver selectivity is approximately 11 dB. While the MS noise figure is 10dB with system margin 1 dB, the minimum selectivity is -71 dB at 1.25MHz frequency offset from the carrier frequency. And the input 3rd order intercept point of the MS class I and the MS class II~V is -9.5 dBm and -14dBm respectively. When the interference power level at the receiver is small, the receiver has better performance as we increase the gain of the LNA. However, when the interference level at the receiver is large, the receiver performance is heavily affected by the spurious as we increase the gain of the LNA. Thus, we proved the effectiveness of the LNA On/Off switching technique as to reduce the effect of the spurious.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.6
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• pp.853-856
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• 2021

In this paper, a low noise amplifier having high gain and low noise by using input and inter stage matching circuits has been designed. A current-reused two-stage common-source topology is adopted, which can obtain high gain and low power consumption. Deterioration of noise characteristics according to the source inductive degeneration matching is compensated by adopting additional matching circuits. Moreover trade-offs among noise, gain, linearity, impedance matching, and power dissipation have been considered. In this design, 0.18-mm CMOS process is employed for the simulation. The simulated results show that the designed low noise amplifier can provide high power gain and low noise characteristics.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.1
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• pp.15-20
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• 2012

In this paper, we designed and analysed K-band front-end module for digital microwave communication system receiver which improvement of dynamic range. We also suggested method of minimum amplified input signal level used to minimize noise figure of low-noise amplifier for High dynamic range. The designed modules consist of active mixer with conversions gain and PL-DRO with high stability and quality factor. The designed modules performance is that has the characteristics of over 54dB conversion gain, 1.3dB noise figure.

• Journal of Korea Society of Digital Industry and Information Management
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• v.20 no.2
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• pp.63-74
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• 2024

This Paper presents a resistive wideband fully differential low-noise amplifier (LNA) designed using a noise-cancellation technique for TV tuner applications. The front-end of the LNA employs a cascode common-gate (CG) configuration, and cross-coupled local feedback is employed between the CG and common-source (CS) stages. The moderate gain at the source of the cascode transistor in the CS stage is utilized to boost the transconductance of the cascode CG stage. This produces higher gain and lower noise figure (NF) than a conventional LNA with inductor. The NF can be further optimized by adjusting the local open-loop gain, thereby distributing the power consumption among the transistors and resistors. Finally, an optimized DC gain is obtained by designing the output resistive network. The proposed LNA, designed in SK Hynix 180 nm CMOS, exhibits improved linearity with a voltage gain of 10.7 dB, and minimum NF of 1.6-1.9 dB over a signal bandwidth of 40 MHz to 1 GHz.