• 제목/요약/키워드: Millimeter wave channel

검색결과 71건 처리시간 0.025초

유전체 도파관을 이용한 채널 드로핑 필터 (Dielectric Waveguide Channel Dropping Filter)

  • 김신기;박동철;오승엽
    • 대한전자공학회논문지
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    • 제25권1호
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    • pp.1-7
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    • 1988
  • A new type broadband channel dropping filter which has a potential use as a millimeter-wave multiplexer has been realized by properly connecting 3-dB directional couplers and bandstop filters. 90\ulcorner3-dB directional couplers have been designed using two nonuniformly coupled dielectric image guides, while bandstop filters with Chebyshev passbands have been designed using dielectric image-guide grating structure. Effective dielectric constant method has been aplied to the image-guide dispersion analysis and to the design of bandstop gratings and 3-dB couplers. Experimental results in excellent agreement with computed responses are demonstrated.

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밀리미터파 무선통신로에서 차량간 통신 시스템의 성능개선 (Improvement Performance of Inter-Vehicle Communication System in Millimeter Wave RF Channels)

  • 김춘구;강희조;최용석
    • 한국항행학회논문지
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    • 제5권2호
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    • pp.158-164
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    • 2001
  • 본 논문은 도로 지면, 옆 차선의 차량 그리고 콘크리트 벽 반사를 포함하는 차량간 통신 시스템의 전파 모델을 제시했다. 그리고 광전파나 밀리미터파를 분석하는데 효과적인 Ray tracing 방법을 이용한 전파 손실과 지연 특성을 이론적으로 전개했다. 마지막으로 다이버시티, BCH 부호화 그리고 컨벌루션 부호화 기법을 이용하여 전파 특성의 향상을 보았다. 분석 결과, MRC 다이버시티와 BCH 부호화는 데이터 서비스 기준인 PER = $10^{-6}$을 만족할 수 없었다. 그러나 라이시안 페이딩에서 컨벌루션 부호화 기법을 채용했을 때 데이터 서비스 기준인 PER = $10^{-6}$을 만족하는 패킷 오율 특성을 얻음을 알 수 있었다.

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Exploiting Multi-Hop Relaying to Overcome Blockage in Directional mmWave Small Cells

  • Niu, Yong;Gao, Chuhan;Li, Yong;Su, Li;Jin, Depeng
    • Journal of Communications and Networks
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    • 제18권3호
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    • pp.364-374
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    • 2016
  • With vast amounts of spectrum available in the millimeter wave (mmWave) band, small cells at mmWave frequencies densely deployed underlying the conventional homogeneous macrocell network have gained considerable interest from academia, industry, and standards bodies. Due to high propagation loss at higher frequencies, mmWave communications are inherently directional, and concurrent transmissions (spatial reuse) under low inter-link interference can be enabled to significantly improve network capacity. On the other hand, mmWave links are easily blocked by obstacles such as human body and furniture. In this paper, we develop a multi-hop relaying transmission (MHRT) scheme to steer blocked flows around obstacles by establishing multi-hop relay paths. In MHRT, a relay path selection algorithm is proposed to establish relay paths for blocked flows for better use of concurrent transmissions. After relay path selection, we use a multi-hop transmission scheduling algorithm to compute near-optimal schedules by fully exploiting the spatial reuse. Through extensive simulations under various traffic patterns and channel conditions, we demonstrate MHRT achieves superior performance in terms of network throughput and connection robustness compared with other existing protocols, especially under serious blockage conditions. The performance ofMHRT with different hop limitations is also simulated and analyzed for a better choice of the maximum hop number in practice.

밀리미터 웨이브 링크를 갖는 셀룰러 통신 시스템을 위한 송·수신 빔 추적 기법 (A Tx-Rx Beam Tracking Technique for Cellular Communication Systems with a mmWave Link)

  • 김규석;임태성;최주형;조용수
    • 한국통신학회논문지
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    • 제39C권12호
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    • pp.1327-1337
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    • 2014
  • 밀리미터 웨이브 대역을 링크로 갖는 셀룰러 통신 시스템에서는 하향링크 제어신호를 사용하여 빔 추적을 할 경우에는 오랜 빔 트레이닝 시간과 많은 네트워크 자원이 소요된다. 본 논문에서는 아날로그 빔형성 방식의 단말기와 디지털 빔형성 방식의 기지국으로 구성된 밀리미터 웨이브 링크를 갖는 OFDM 기반 셀룰러 통신 시스템에 적합한 빔 추적 기법을 제안한다. 제안된 기법은 Zadoff-Chu 시퀀스 기반으로 설계된 상향 링크 프리앰블 신호와 단말기 ID, 단말기의 송신빔 ID, 수신 신호의 DoA 등의 파라메터를 추정할 수 있는 메트릭을 사용하여 기지국과 단말기 사이의 송수신 빔 쌍과 서빙 기지국을 추적할 수 있다. SCM 채널을 사용한 모의실험을 통하여 제안된 기법은 다수의 단말기가 존재하는 환경에서도 각 단말기의 송수신 빔 쌍을 효율적으로 추적하고, 빔 추적 시 요구되는 소요 시간과 계산 복잡도를 크게 줄일 수 있음을 확인한다.

Millimeter-wave directional-antenna beamwidth effects on the ITU-R building entry loss (BEL) propagation model

  • Lee, Juyul;Kim, Kyung-Won;Kim, Myung-Don;Park, Jae-Joon;Yoon, Young Keun;Chong, Young Jun
    • ETRI Journal
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    • 제42권1호
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    • pp.7-16
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    • 2020
  • Assuming omnidirectional antenna reception, the ITU-R recently developed a new propagation model on building entry loss (BEL) for 5G millimeter-wave frequency sharing and compatibility studies, which is a simplified outdoor-to-indoor path loss model. Considering the utilization of high-gain narrow-beamwidth beamforming, the omnidirectional-based ITU-R BEL model may not be appropriate to predict propagation characteristics for directional beamforming scenarios. This paper studies the effects of beamwidth on the ITU-R BEL model. This study is based on field measurements collected with four different beamwidth antennas: omnidirectional, 10° horn, 30° horn, and 60° horn. The measurement campaigns were conducted at two types of building sites: traditional and thermally efficient buildings. These sites, as well as the measurement scenarios, were carefully chosen to comply with the ITU-R BEL measurement guidelines and the ITU-R building types. We observed the importance of accurate beam alignment from the BEL variation range. We were able to quantify the beamwidth dependency by fitting to a model that is inversely proportional to the beamwidth.

100GHz 이상의 밀리미터파 HEMT 소 제작 및 개발을 위한 GaAs기반 0.1$\mu\textrm{m}$ $\Gamma$-게이트MHEMT의 DC/RF 특성에 대한 calibration 연구 (A Study on the Calibration of GaAs-based 0.1-$\mu\textrm{m}$ $\Gamma$-gate MHEMT DC/RF Characteristics for the Development and Fabrication of over-100-GHz Millimeter-wave HEMT devices)

  • 손명식;이복형;이진구
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.751-754
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    • 2003
  • Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A1$_{0.48}$As modulation-doped heterostructure on the GaAs wafer. For the optimized device performance simulation, we calibrated the device performance of 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate MHEMT fabricated in our research center using the 2D ISE-DESSIS device simulator. With this calibrated parameter set, we have obtained very good reproducibility. The device simulation on the DC and RF characteristics exhibits good reproducibility for our 0.1-${\mu}{\textrm}{m}$ -gate MHEMT device compared with the measurements. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.ormance.

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Correlation Analysis of Transmission and Reflection Angle of Propagation Characteristics from 13-28 GHz

  • Kim, Yong Won;Jeong, Won Ho;Ju, Sang Lim;Kim, Kyung Seok
    • 한국위성정보통신학회논문지
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    • 제11권2호
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    • pp.69-73
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    • 2016
  • In order to derive reliable propagation models for future millimeter-wave frequency indoor pico-cellular communications systems, accurate reflectivity data of building materials is necessary. The broad variety of building materials and construction codes makes accurate attenuation prediction very difficult without the support of specific construction data or measurements. This paper derives a transmission and reflection coefficient based on 13 GHz to 28 GHz measurement data. Transmission and reflection is measured by applying change in the reception angle of each building material, such as plasterboard. The transmission and reflection coefficient derived shows a correlation between frequency dependence and angle. As a result, as the reception angle is reduced, the reflected angle from the transmitter that could be received increases, showing that there is a correlation. In addition, the fundamental investigations carried out lay the foundation for radio channel-related research, which is essential for the development of future millimeter-wave communications systems.

GaAs 기반 $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ 이종접합 구조를 갖는 MHEMT 소자의 DC 특성에 대한 calibration 연구 (Calibration Study on the DC Characteristics of GaAs-based $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ Heterostructure Metamorphic HEMTs)

  • 손명식
    • 반도체디스플레이기술학회지
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    • 제10권1호
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    • pp.63-73
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    • 2011
  • Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with conventional pseudomorphic HEMTs (PHEMTs). For the optimized device design and development, we have performed the calibration on the DC characteristics of our fabricated 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure on the GaAs wafer using the hydrodynamic transport model of a commercial 2D ISE-DESSIS device simulator. The well-calibrated device simulation shows very good agreement with the DC characteristic of the 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.

InP 식각정지층을 갖는 MHEMT 소자의 InGaAs/InP 복합 채널 항복 특성 시뮬레이션 (Simulation Study on the Breakdown Characteristics of InGaAs/InP Composite Channel MHEMTs with an InP-Etchstop Layer)

  • 손명식
    • 반도체디스플레이기술학회지
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    • 제12권4호
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    • pp.21-25
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    • 2013
  • This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to 4 V in the previous work. This is because the surface effect at the drain side decreases the channel current and the impact ionization in the channel at high drain voltage. In order to increase the breakdown voltage at the same asymmetric gate-recess structure, the InGaAs channel structure is replaced with the InGaAs/InP composite channel in the simulation. The simulation results with InGaAs/InP channel show that the breakdown voltage increases to 6V in the MHEMT as the current decreases. In this paper, the simulation results for the InGaAs/InP channel are shown and analyzed for the InGaAs/InP composite channel in the MHEMT.

M/W 중계 시스템 망의 주파수 조정을 위한 보호비 계산에 대한 연구 (A Study on Calculation of Protection Ratio for Frequency Coordination in Microwave Relay System Networks)

  • 서경환;이주환
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2005년도 종합학술발표회 논문집 Vol.15 No.1
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    • pp.125-130
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    • 2005
  • This paper suggests an efficient method of protection ratio calculation and shows some calculated results applicable to frequency coordination in microwave relay system networks, and the net filter discrimination (NFD) associated with Tx spectrum mask and overall Rx filter characteristics has been examined to obtain the adjacent channel protection ratio. The protection ratio comprises several factors such as C/N of modulation scheme, noise-to-interference ratio, multiple interference allowance, fade margins of multi-path and rain attenuation, and NFD. According to computed results for 6.7 GHz, 64-QAM, and 60 km at BER $10^{-6}$, fade margin and co-channel protection ratio are 41.1 and 75.2 dB, respectively, In addition, NFD for channel bandwidth of 40 MHz reveals 28.9 dB at the first adjacent channel, which results in adjacent channel protection ratio of 46.3 dB. The proposed method provides some merits of an easy calculation, systematic extension, and applying the same concept to frequency coordination in millimeter wave relay system networks.

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