• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.217-220
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• 2014

Graphite electrodes are used for secondary batteries, fuel cells, and super capacitors. Research is underway to increase the reaction area of graphite electrodes. In this study, we have investigated the growth properties of carbon nanowall (CNW) according to the ingredient of gas. Microwave plasma enhanced chemical vapor deposition (MPECVD) system was used to grow CNW on Si substrate with a variety of the reaction gas. The planar and vertical growth conditions of the grown CNWs according to the ingredient of the gas were characterized by a field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The electrical characteristics of CNWs were analyzed using a 4-point probe.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.687-687
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• 2013

In rearpoint contact solar cell and the PERC (passivated emitter rear contact) type cell, surfaces were passivated by SiO2 or Al2O3 to increase solar cell efficiency. Therefore, we have investigated the effect of surface passivation for crystalline silicon solarcell using mass-production atomic layer deposited (ALD) Al2O3. The patttern which consists of cylinders with 100um diameter and 5um height was formed by PR patterning on Si (100) substrate and then Al2O3 of about 10nm and 20nm thickness was deposited by ALD. The pattern in 10 nm Al2O3 film was removed by dipping in aceton solution for about 10 min but the pattern in 20 nm Al2O3 film was not. The influences of process temperature and heat treatment were investigated using microwave photoconductance decay (PCD) and Quasi-Steady-State photoconductance (QSSPC). The solar cell process used in this work combines the advantage of using the applicability of a selective deposition associated with a ALD passivation and the use of low-cost screen print for the contacts formation.

• Advances in nano research
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• v.9 no.2
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• pp.113-122
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• 2020

Surface-Enhanced Raman Scattering (SERS) spectroscopy is a multifaceted surface sensitive methodology which exploits spectroscopy-based analysis for various applications. This technique is based on the massive amplification of Raman signals which were feeble previously in order to use them for appropriate identification at qualitative and quantitative in chemical as well as biological systems. This novel powerful technique can be utilized to identify pathogens such as bacteria and viruses. As far as SERS is concerned, one of the most studied problems has been functionalization of SERS active substrate. Metal colloids and nanostructures or microstructures synthesized using noble metals such as Au, Ag and Cu are considered to be SERS active. Silver and gold are extensively used as SERS active substrates due to chemical inertness and stability in air compare to copper. However, use of Cu as a suitable alternative has been taken into account as it is cheap. Herein, we have synthesized air-stable copper microstructures/nanostructures by chemical, electrochemical and microwave-assisted methods. In this paper, we have also discussed the use of as synthesized copper micro/nanostructures as inexpensive yet effective SERS active substrates for the fast identification of micro-organisms like Staphylococcus aureus and Escherichia coli.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.223-228
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• 1999

We have investigated the microwave properties of a high-T$_c$. superconducting Josephson junction by Shapiro step measurements. A Josephson junction was fabricated on the bicrystal MgO substrate using pulsed laser deposition method. We have measured Shapiro steps in the I-V characteristics under the irradiation of 1.36 cm wavelength up to 45 K and found inclined current steps above 50 K. In order to understand these results, we introduced an additional resistance connected in series to RSJ model. Using this modified RSJ model, we could explain the inclined current steps as a result of superposition of the junction and an additional resistance above certain temperatures. Also, we presented the received power of the Josephson junction above 50 K.

• ETRI Journal
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• v.27 no.2
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• pp.133-139
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• 2005

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 ${\mu}$ gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2mm${\times}$ 2mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1mm${\times}$ 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2mm ${\times}$ 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W-band.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.6 no.2
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• pp.27-34
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• 1995

In this paper, an X-band TDRO(transistor dielectric resonator oscillator) is designed and experimented with the oscillator constructed. Design of the TDRO is carried out by deriving analycally the coupling parameters between a microstrip line and a dielectric resonator. The coupling parameters take account of the relations among substrate material, ground plane, metallic boundaries surrounding the resonator, distance between a microstrip line and a resonator. Two criteria, external quality factor and coupling coefficient, have been chosen in order to evaluate the performance of the TDRO designed. TDRO studed in this paper may be useful for the application of a microwave system requiring a stable and effective oscillator frequency.

• Journal of information and communication convergence engineering
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• v.15 no.4
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• pp.199-204
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• 2017

A compact dual-band half-ring-shaped (HRS) bent slot antenna fed by a coplanar waveguide for wireless local area network (WLAN) and worldwide interoperability for microwave access (WiMAX) applications is presented. The antenna consists of two HRS slots with different lengths and widths. The two HRS slots are connected through an arc-shaped slit, and the upper HRS slot is bent in order to reduce the size of the antenna. The optimized dual-band HRS bent slot antenna operating in the 2.45 GHz WLAN and 3.5 GHz WiMAX bands is fabricated on an FR4 substrate with dimensions of 30 mm by 30 mm. The slot length of the proposed dual-band slot antenna is reduced by 35%, compared to a conventional dual-band rectangular slot antenna. Experimental results show that the proposed antenna operates in the frequency bands of 2.40-2.49 GHz and 3.39-3.72 GHz for a voltage standing wave ratio of less than 2, and measured gain is larger than 1.4 dBi in the two bands.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.11 no.3
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• pp.153-163
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• 1986

GaAs, one of the III-V compounding semicondnctors, has been widely employed as base materials for the fabrication of the ultra-high-speed devices in the filelds of DBS, optical communications, MMIC'S and digital IC'S. There have been some reports on 4Kx4bit SRAM by D/E MESFET'S, 4K bit SRAM by HEMT'S, and receiver front ends for X-band by MMIC technologies, respectively. This paper reviews GaAs materials, wafer fabrication processes, device applications, and design aspects, and, finally, descusses the future of the ultra-high-spped-devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.243-246
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• 2004

Boron Phosphide films were deposited on (111) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with PH, using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 ml/min for B2H6, 60 ml/min for PH3 and 1 l/min for N2. After as grown the films were insitu annealed fur 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is $10.108{\AA}$ for the reaction temperature at $450^{\circ}C$ and $29.626{\AA}$ fur the reaction temperature at $650^{\circ}C$. The measurement of XRD shows that the films have the orientation of(1 0 1). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry. For the Result of microwaves absorbtion properties using VNA, it obtained the permittivity of BP about 8 between $1.5{\sim}2.5GHz$. In this study, it obtained the BP thin film by deposited in atmosphere pressure And BP thin film can be after to applicate as microwave absolution material is obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.794-797
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• 2004

The object of investigation is represented by PbxSrl-xTiO3(PST) thin films, which were fabricated by the alkoxide-based sol-gel method on Pt/Ti/SiO2/Si substrate. We have investigated both structural and dielectric properties of PST thin films aimed to tunable microwave device applications as a function of Pb/Sr ratio. PST thin films showedtypical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films were found as strongly dependent on Pb/Sr composition ratio. Increasing of Pb content leads to simultaneous increasing of both dielectric constant and dielectric loss characteristics of PST films. The figure of merit (FOM) Parameter (FOM : (%) tunability / tan (%)) reached a maximal value of 27.5 corresponding to Pb/Sr ratio of 40/60. The tunability increased with increasing Pb content. The dielectric constants, dielectric loss and tunability of the PST thin films at Pb/sr ratio of 40/60 measured at 100 kHz were 335, 0.0174 and 47.89 %, respectively.