• Journal of Electrical Engineering and Technology
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• v.7 no.3
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• pp.396-400
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• 2012

Novel fabrication method of nanobridge array of various materials was proposed using suspended silicon nanowire array as a sacrificial template structure. Nanobridges of various materials can be simply fabricated by direct deposition with thermal evaporation on the top of prefabricated suspended silicon nanobridge arrays, which are used as a sacrificial structure. Since silicon nanowire can be easily removed by selective dry etching, nanobridge arrays of an intended material are finally obtained. In this paper, metal nanobridges of Ti/Au, around 50-200 nm in thickness and width, 5-20 ${\mu}m$ in length were fabricated to prove the advantages of the proposed nanowire or nanobridge fabrication method. The nanobridges of Ti/Au after complete removal of sacrificial silicon nanowire template were well-established and bending of nanobridge caused by the tensile stress was observed after silicon removing. Up to 50 nm and 10 ${\mu}m$ of silicon nanowire in diameter and length respectively was also very useful for nanowire templates.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.147-152
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• 2016

In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

• Journal of Integrative Natural Science
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• v.10 no.2
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• pp.65-73
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• 2017

In this review paper, we will discuss about the methods of synthesizing Si nanowires by Top-down and Bottom-up. Silicon nanowires have a lot of application on various fields such as Li ion batteries, solar cells, chemical and biological sensors. We will address some of the applications of silicon Nanowires.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.67-71
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• 2003

Sawing silicon ingot with abrasive slurry generates sludge that includes abrasive powders, cutting oil, and silicon powders. The abrasive powders and cutting oil are being separated and reused. Mixing the remained stodged silicon powders with carbon powders and subsequent heat-treatment are conducted to produce silicon carbide. The size of SiC whiskers and powders was smaller than the conventionally grown silicon carbide whiskers that were synthesized by adding micron-size metal impurities. Impurity related mechanism is attributed to the formation of the silicon carbide whiskers, as metal impurities are contained in the stodged silicon powders.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1091-1092
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• 2006

Silicon nitride - silicon carbide composite was developed by using an abrasive SiC powders as a raw material. The composites were prepared by mixing abrasive SiC powder with silicon, pressing and sintering at $1400^{\circ}C$ under nitrogen atmosphere in atmosphere controlled vacuum furnace. The proportion of silicon in the initial mixtures varied from 20 to 50 wt%. After sintering, crystalline phases and microstructure were characterized. All composites consisted of ${\alpha}-Si_3N_4$ and ${\beta}-Si_3N_4$ as the bonding phases in SiC matrix. Their physical and mechanical properties were also determined. It was found that the density of the obtained composites increased with an increase in the $Si_3N_4$ content formed in the reaction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.328-332
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• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surface. One of the front metal contacts is Ni/Cu plating that it is available to simply and inexpensive production to apply mass production. Ni is shown to be a suitable barrier to Cu diffusion into the silicon. The process of Ni electroless plating on front silicon surface is performed using a chemical bath. Additives and buffer agents such as ammonium chloride is added to maintain the stability and pH control of the bath. Ni deposition rate is found to vary with temperature, time, utilization of bath. The experimental result shown that Ni layer by SEM (scanning electron microscopy) and EDX analysis. Finally, plated Ni/Cu contact solar cell result in an efficiency of 17.69% on $2{\times}2\;cm^2$, Cz wafer.

• Current Photovoltaic Research
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• v.6 no.1
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• pp.17-20
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• 2018

The dependency of the photovoltaic performance of p-/n-type silicon solar-cells on the metallic contaminant type (Fe, Cu, and Ni) and concentration was investigated. The minority-carrier recombination lifetime was degraded with increasing metallic contaminant concentration, however, the degradation sensitivity of recombination lifetime was lower at n-type than p-type silicon wafer, which means n-type silicon wafer have an immunity to the effect of metallic contamination. This is because heavy metal ions with positive charge have a much larger capture cross section of electron than hole, so that reaction with electrons occurs much more easily. The power conversion efficiency of n-type solar-cells was degraded by 9.73% when metallic impurities were introduced in the silicon bulk, which is lower degradation compared to p-type solar-cells (15.61% of efficiency degradation). Therefore, n-type silicon solar-cells have a potential to achieve high efficiency of the solar-cell in the future with a merit of immunity against metal contamination.

• Membrane and Water Treatment
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• v.9 no.1
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• pp.63-68
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• 2018

Molecular dynamics simulations were used to study the removal of Cd(II) as a heavy metal from wastewater using armchair carbon nanotube, boron nitride nanotube and silicon carbide nanotubes under applied electric field. The system contains an aqueous solution of $CdCl_2$ as a heavy metal and a (7,7) nanotube as a nanostructured membrane, embedded in a silicon nitride membrane. An external electric field was applied to the considered system for the removal of $Cd^{2+}$ through nanotubes. The simulation results show that in the same conditions, considered armchair nanotubes were capable to remove $Cd^{2+}$ from wastewater with different ratios. Our results reveal that the removal of heavy metals ions through armchair carbon, boron nitride and silicon carbide nanotubes was attributed to the applied electric field. The selective removal phenomenon is explained with the calculation of potential of mean force. Therefore, the investigated systems can be recommended as a model for the water treatment.

• Korean Journal of Metals and Materials
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• v.49 no.11
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• pp.905-909
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• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surfaces. One of the available front metal contacts is Ni/Cu plating, which can be mass produced via asimple and inexpensive process. A selective emitter, meanwhile, involves two different doping levels, with higher doping (${\leq}30{\Omega}/sq$) underneath the grid to achieve good ohmic contact and low doping between the grid in order to minimize the heavy doping effect in the emitter. This study describes the formation of a selective emitter and a nickel silicide seed layer for the front metallization of silicon cells. The contacts were thickened by a plated Ni/Cu two-step metallization process on front contacts. The experimental results showed that the Ni layer via SEM (Scanning Electron Microscopy) and EDX (Energy dispersive X-ray spectroscopy) analyses. Finally, a plated Ni/Cu contact solar cell displayed efficiency of 18.10% on a $2{\times}2cm^2$, Cz wafer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.160-165
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• 2001

The effects of various metals on Field Aided Lateral Crystallization (FALC) behaviors of amorphous silicon (a-Si) were investigated. Under an influence of electric field, metals such s Cu, Ni and Co were found to fasten the lateral crystallization toward a metal-free region, exhibiting a typical FALC behavior while the lateral crystallization of a-Si was not obvious for Pd. However, Au, Al and Cr did not induce the lateral crystallization of a-Si in metal-free region. Such phenomenological differences in various metals were studied in terms of dominant diffusing species (DDS) in the reaction between metal and Si. It was judged that the applied electric field enhanced the crystallization velocity by accelerating the diffusion of metal atoms since the occurrence of lateral crystallization would be strongly dependent on the diffusion of metal atoms than that of Si atoms. Therefore, it was concluded that he only metal-dominant diffusing species in the reaction between metal and Si results in the crystallization of a-Si in metal-free region.