References
- P. Papet, O. Nichiporuk, A. Kaminski, Y. Rozier, J. Kraiem, J. F. Lelievre, A. Chaumartin, A. Fave, M. Lemiti, "Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching", Sol. Energy Mater. Sol. Cells, Vol. 90, pp. 2319-2328, 2006. https://doi.org/10.1016/j.solmat.2006.03.005
- U. Jager, S. Mack, C. Wufka, A. Wolf, D. Biro, R. Preu, "Benefit of selective emitters for p-Type silicon solar cells with passivated surfaces", IEEE J. Photovolt., Vol. 3, No. 2, pp. 621-627, 2013. https://doi.org/10.1109/JPHOTOV.2012.2230685
- E. Van Kerschaver, G. Beaucarne, "Back-contact solar cells: a review", Prog. Photovolt: Res. Appl., Vol. 14, pp. 107-123, 2006. https://doi.org/10.1002/pip.657
- C. Gong, S. Singh, J. Robbelein, N. Posthuma, E. Van Kerschaver, J. Poortmans, R. Mertens, "High efficient n-type back-junction back-contact silicon solar cells with screen-printed al-alloyed emitter and effective emitter passivation study", Prog. Photovolt: Res. Appl., Vol. 19, pp. 781-786, 2011. https://doi.org/10.1002/pip.1035
- F. Feldmann, M. Bivour, C. Reichel, M. Hermle, S. W. Glunz, "Passivated rear contacts for high-efficiency n-type Sisolar cells providing high interface passivation quality and excellent transport characteristics", Sol. Energy Mater. Sol. Cells, Vol. 120, pp. 270-274, 2014. https://doi.org/10.1016/j.solmat.2013.09.017
- M. Taguchi, A. Yano, S. Tohoda, K. Matsuyama, Y. Nakamura, T. Nishiwaki, K. Fujita, E. Maruyama, "24.7% Record efficiency HIT solar cell on thin silicon wafer", IEEE J. Photovolt., Vol. 4, No. 1, pp. 96-99, 2014. https://doi.org/10.1109/JPHOTOV.2013.2282737
- K. Masuko, M. Shigematsu, T. Hashiguchi, D Fujishima, M. Kai, N. Yoshimura, T. Yamaguchi, Y. Ichihashi, T. Mishima, N. Matsubara, T. Yamanishi, T. Takahama, M. Taguchi, E. Maruyama, S. Okamoto, "Achievement of more than 25% conversion efficiency with crystalline silicon heterojunction solar cell", IEEE J. Photovolt., Vol. 4, No. 6, pp. 1433-1435, 2014. https://doi.org/10.1109/JPHOTOV.2014.2352151
- A. Rehman, S. H. Lee, "Advancements in n-Type base crystalline silicon solar cells and their emergence in the photovoltaic industry", Scientific World Journal 2013, 2013.
- D. Macdonald, L. J. Geerligs, "Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon", Appl. Phys. Lett, Vol. 85, pp. 4061-4063, 2004. https://doi.org/10.1063/1.1812833
- S. W. Glunz, S. Rein, J. Y. Lee, W. Warta, "Minority carrier lifetime degradation in boron-doped Czochralski silicon", J. Appl. Phys., Vol. 90, pp. 2397-2404, 2001.
- J. Schmidt, A. G. Aberle, R. Hezel, "Investigation of carrier lifetime instabilities in Cz-grown silicon", in Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference, pp. 13-18, 1997.
- J. Schmidt, K. Bothe, "Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon", Phys. Rev. B, Vol. 69, pp. 024107, 2004. https://doi.org/10.1103/PhysRevB.69.024107
- K. Graff, Metal impurities in silicon-device fabrication, Springer Science & Business Media, 2013.
- A. A. Istratov, E. R. Weber, "Electrical properties and recombination activity of copper, nickel and cobalt in silicon", Appl. Phys. A, Vol. 66, pp. 123-136, 1998. https://doi.org/10.1007/s003390050649
- A. A. Istratov, H. Hieslmair, E. R. Weber, "Iron and its complexes in silicon", Appl. Phys. A, Vol. 69, pp.13-44, 1999. https://doi.org/10.1007/s003390050968
- B. G. Streetman, Solid State Electronic Devices, Pearson Prentice Hall, 2006.
- S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, Inc., 2007.