• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.8 no.2
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• pp.91-97
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• 2010

As nuclear power plants are getting older, interests on a decontaminating process are increasingly attracting more attention. Chemical decontamination is crucial to lower the production of radioactive waste and radiation dose rate. Prior to this, oxidizers and detergents for target material should be chosen so as to decontaminate major systems and components of a nuclear power plant chemically. In order to decontaminate it properly, it is crucial to have information about the chemical composition and crystalline structure of CRUD, analyzing its samples from the target or the decontamination system with components. However, there is no program which enables the extraction of samples directly from the object or the decontamination system with components carrying genuine radioactivity. Therefore, it is limited to samples from corrosion products carrying partial radioactivity as a resource. The composition of CRUD varies considerably depending on refueling cycle because it is closely related to the constituent of basic material. After settling a target, it is crucial to analyze and obtain analytical information about CRUD as a decontamination target. In this paper, various technologies for manufacturing simulated CRUD are introduced as alternatives to unattained samples. A metal oxide or metal hydroxide was used to synthesize simulated cruds having chemical compositions and crystalline stricture similar to the actual one by 12 different methods. CRUD 4(metal oxides in the autoclave vessel) and CRUD 10(metal oxides in a crucible after hydrazing pretreatment)were chosen as the best method for Type 1 and Type 2.respectively. As these CRUD can be synthesized easily without using any specialized equipment or reagents in a short time and in large quantities, they are expected to stimulate the development of decontaminating agents and processes.

• Journal of the Korean Society of Industry Convergence
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• v.7 no.3
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• pp.259-263
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• 2004

In the manufacture progress of LCD or semiconductor, there are used many kinds of gas like erosion gas, dilution gas, toxic gas as a progress which used these gas there are required high puritize to increase accumulation rate of semiconductor or LCD materials work progress of semiconductor or LCD it demand many things like the material which could minimize metallic dust that could be occured by reaction between gas and transfer pipe laying material, illumination of the surface, emition of the gas, metal liquation, welding etc also demand quality geting stricted. Material-Low-sulfur-contend (0.007-0010), vacuum-arc-remelt(VAR), seamless, high-purity tubing material is recommend for enhance welding lower surface defect density All wetted stainless steel surface must be 316LSS elecrto polishinged with ${\leq}0.254{\mu}m$($10.0{\mu}in$) Ra average surface finish, $Cr/Fe{\geq}1.1$ and $Cr_2O_3$ thickness ${\geq}25{\AA}$ From the AES analytical the oxide layer thickness (23.5~36 angstroms silicon dioxide equivalent) and chromum to iron ratios is similar to those generally found on electropolished stainless steel., molybdenum and silicon contaminants ; elements characteristic of stainless steel (iron, nickel and chromium); and oxygen were found on the surface Phosphorus and nitrogen are common contaminants from the electropolish and passivation steps.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.111-114
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• 1999

Electroluminescence(EL) devices based on organic thin films have been attracted lots of interests in large-area light-emitting display. In this stuffy, an emissive layer was fabricated using Langmuir-Blodgett(LB) technique in organic light-emitting (OLEDs). This emissive organic material was synthesized and named PECCP[poly(3.6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] which has a strong electron donor group and an electron acceptor group in main chain repeated unit. This material has good solubility in common organic solvents such as chloroform. THF, etc, and has a good stability in air. The Langmuir-Blodgett(LB) technique has the advantage of precise control of the thickness down to the molecular scale, In particular, by varying the film thickness it is possible to investigate the metal/polymer interface. Optimum conditions for the LB film deposition are usually determined by investigating a relationship between a surface pressure $\pi$ and an effective are A occupied by one molecule on the subphase. The LB films were deposited on an indium-tin-oxide(ITO) glass at a surface pressure of 10 mN/m and dipping speed of 12 mm/min after spreading PECCP solution on distilled water surphase at room temperature, Cell structure was ITO/PECCP LB film/Alq$_3$/Al. We considered PECCP as a hole -transport layer inserted between the emissive layer and ITO. We also used Alq$_3$ as an emissive layer and an electron transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum and EL spectrum of the OLEDs.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.497-502
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• 2019

Metal oxide nanostructures are promising materials for advanced applications, such as high sensitive gas sensors, and high capacitance lithium-ion batteries. In this study, tin oxide (SnO) nanostructures were grown on a Si wafer substrate using a two-zone horizontal furnace system for a various substrate temperatures. The raw material of tin dioxide ($SnO_2$) powder was vaporized at $1070^{\circ}C$ in an alumina crucible. High purity Ar gas, as a carrier gas, was flown with a flow rate of 1000 standard cubic centimeters per minute. The SnO nanostructures were grown on a Si substrate at $350{\sim}450^{\circ}C$ under 545 Pa for 30 minutes. The surface morphology of the as-grown SnO nanostructures on Si substrate was characterized by field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Raman spectroscopy was used to confirm the phase of the as-grown SnO nanostructures. As the results, the as-grown tin oxide nanostructures exhibited a pure tin monoxide phase. As the substrate temperature was increased from $350^{\circ}C$ to $424^{\circ}C$, the thickness and grain size of the SnO nanostructures were increased. The SnO nanostructures grown at $450^{\circ}C$ exhibited complex polycrystalline structures, whereas the SnO nanostructures grown at $350^{\circ}C$ to $424^{\circ}C$ exhibited simple grain structures parallel to the substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.806-811
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• 2017

An all-transparent ultraviolet (UV) photodetector was fabricated by structuring $p-NiO/n-SnO_2/ITO$ on a glass substrate. $SnO_2$ is an important semiconductor material because of its large bandgap, high electron mobility, high transmittance (as high as 80% in the visible range), and high stability under UV light. For these reasons, $SnO_2$ is suitable for a range of applications that involve UV light. In order to form a highly transparent p-n junction for UV detection, $SnO_2$ was deposited onto a device containing NiO as a high-transparent metal conductive oxide for UV detection. We demonstrated that all-transparent UV photodetectors based on $SnO_2$ could provide a definitive photocurrent density of $4nA\;cm^{-2}$ at 0 V under UV light (365 nm) and a low saturation current density of $2.02nA{\times}cm^{-2}$. The device under UV light displayed fast photoresponse with times of 31.69 ms (rise-time) and 35.12 ms (fall-time) and a remarkable photoresponse ratio of 69.37. We analyzed the optical and electrical properties of the $NiO/SnO_2$ device. We demonstrated that the excellent properties of $SnO_2$ are valuable in transparent photoelectric device applications, which can suggest various routes for improving the performance of such devices.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.367-373
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• 2014

In this study, the reducing agent hydrazine and precipitator NaOH were used with $NiCl_2$ as a starting material in order to compound Ni-based material with spherical nano characteristics; resulting material was used as an anode for SOFC. Synthetic temperature, pH, and solvent amounts were experimentally optimized and the synthesis conditions were confirmed. Also, a 0 ~ 0.15 mole ratio of metal(Co, Fe) was alloyed in order to increase the catalyst activation performance of Ni and finally, spherical nano $Ni_{(1-x)}-M_{(x=0{\sim}0.15)}$(M = Co, Fe) alloy materials were compounded. In order to evaluate the catalyst activation for hydrocarbon fuel, fuel gas(10%/$CH_4$+10%/Air) was added and the responding gas was analyzed with GC(Gas Chromatography). Catalyst activation improvement was confirmed from the 3% hydrogen selectivity and 2.4% methane conversion rate in $Ni_{0.95}-Co_{0.05}$ alloy; those values were 4.4% and 19%, respectively, in $Ni_{0.95}-Fe_{0.05}$ alloy.

• Corrosion Science and Technology
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• v.11 no.6
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• pp.280-285
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• 2012

Aluminum is on active metal, but it is well known that its oxide film plays a role as protective barrier which is comparatively stable in air and neutral aqueous solution. Thus, aluminum alloys have been widely applied in architectural trim, cold & hot-water storage vessels and piping etc., furthermore, the aluminum alloy of AC8A have been widely used in mold casting material of engine piston because of its properties of temperature and wear resistance. In recent years, the oil price is getting higher and higher, thus the using of low quality oil has been significantly increased in engines of ship and vehicle. Therefore it is considered that evaluation of corrosion resistance as well as wear resistance of AC8A material is also important to improve its property and prolong its lifetime. In this study, the effect of solution and tempering heat treatment to corrosion and wear resistance is investigated with electrochemical method and measurement of hardness. The hardness decreased with solution heat treatment compared to mold casting condition, but its value increased with tempering heat treatment and exhibited the highest value of hardness with tempering heat treatment temperature at $190^{\circ}C$ for 24hrs. Furthermore, corrosion resistance increased with decreasing of the hardness, and decreased with increasing of the hardness reversely. As a result, it is suggested that the optimum heat treatment to improve both corrosion and wear resistance is tempering heat treatment temperature at $190^{\circ}C$ for 16hrs.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.433-436
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• 2013

Carbon-coated $Li_3V_2(PO_4)_3-LiMnPO_4$ composite cathode materials are first reported in this work, prepared by the mechanochemical process with a complex metal oxide as the precursor and sucrose as the carbon source. X-ray diffraction pattern of the composite material indicates that both olivine $LiMnPO_4$ and monoclinic $Li_3V_2(PO_4)_3$ co-exist. We further investigated the electrochemical properties of our $Li_3V_2(PO_4)_3-LiMnPO_4$ composite cathode materials using galvanostatic charging/discharging tests, where our $Li_3V_2(PO_4)_3-LiMnPO_4$ composite electrode materials exhibit the charge/discharge efficiency of 91.9%, while $Li_3V_2(PO_4)_3$ and $LiMnPO_4$ exhibit the efficiency of 87.7 and 86.7% in the first cycle. The composites display unique electrochemical performances in terms of overvoltage and cycle stability, displaying a reduced gap of 141.6 mV between charge and discharge voltage and 95.0% capacity efficiency after $15^{th}$ cycles.

• KEPCO Journal on Electric Power and Energy
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• v.7 no.1
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• pp.161-165
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• 2021

In general, SOFCs mainly use Ni-YSZ cermet, a mixture of Ni and YSZ, as an anode material, which is stable in a high-temperature reducing atmosphere. However, when SOFCs have operated at a high temperature for a long time, the structural change of Ni occurs and it results in the problem of reducing durability and efficiency. Accordingly, a development of a new anode material that can replace existing nickel and exhibits similar performance is in progress. In this study, SrTiO₃, which is a perovskite-based mixed conductor and one of the candidate materials, was used. In order to increase the electrical conduction properties, Y_0.08Sr_0.92Fe_0.3Ti_0.7O₃, doped with 0.08 mol of Y³⁺ in Sr-site and 0.03 mol of transition metal Fe³⁺ in Ti-site, was synthesized and its chemical diffusion coefficient and reaction constant were measured. Its electrical conductivity changes were also observed while changing the oxygen partial pressure at a constant temperature. The performance as a candidate electrode material was verified by predicting the defect area through the electrical conductivity pattern according to the oxygen partial pressure.