• Journal of the Korean Electrochemical Society
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• v.6 no.3
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• pp.169-173
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• 2003

Electrochemical capacitor made with metal oxide electrode uses rapid and reversible protonation/deprotonation of metal oxide material under the aqueous acidic solution, generally. Electrochemical stability window of aqueous electrolyte-type capacitor is narrow compared to that of organic electrolyte-type capacitor. Electrochemical characteristics of electrochemical capacitor made with metal oxide electrode and lithium or ammonium cation based organic electrolyte were evaluated. Electrochemical capacitor based on $RuO_2$ electrode material and 1M $LiPF_6$ in mixed solvents of EC, DEC, and EMC has anodic and cathodic specific capacitance of 145 and $142F/g-RuO_2{\cdot}nH_2O$, respectively, by using cyclic voltammetry with scan rate of 2mV/sec $g-RuO_2$ in potential range of $2.0\~4.2V(Li|Li^+))$.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.165-170
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• 2012

One-dimensional, nanomaterial field effect transistors (FET) are promising sensors for bio-molecule detection applications. In this paper, we review fabrication and characteristics of 1-D nanomaterial FET type biosensors. Materials such as single wall carbon nanotubes, Si nanowires, metal oxide nanowires and nanotubes, and conducting polymer nanowires have been widely investigated for biosensors, because of their high sensitivity to bio-substances, with some capable of detecting a single biomolecule. In particular, we focus on three important aspects of biosensors: alignment of nanomaterials for biosensors, surface modification of the nanostructures, and electrical detection mechanism of the 1-D nanomaterial sensors.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.25.2-25.2
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• 2009

Vertically aligned zinc oxide(ZnO) nanorods (NRs) with different surface morphology were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrate with different deposition condition. Based on the surface morphology, ZnO nanostructures are divided into three types: nanoneedles, nanonails and nanorods with rounded tip. Variable temperature photoluminescence (PL) have employed to probe the exciton recombination in high density and vertically aligned ZnO Nanorod arrays. Low temperature photoluminescence measurements do not show any significant yellow emission, but the near band edge excitonic emission shows very strong dependence with the surface morphology. The recombination properties are expected to be different due to different surface-to-volume ratio and distribution of potential fluctuations of intrinsic defects.

• Journal of Welding and Joining
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• v.33 no.3
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• pp.32-39
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• 2015

With the simplicity of process and high reliability in chip or package bonding, epoxy solder paste (ESP) has been recently considered as a competitive bonding material. The ESP material is composed of solder powder and epoxy formulation which can remove oxide layers on the surface of solder powder and pad finish metal. The bonding formed using ESP shows outstanding bonding strength and suppresses electrical short between adjacent pads or leads owing to the reinforced structure by cured epoxy after the bonding. ESP is also expected to suppress the formation and growth of whisker on the pads or leads. With the mentioned advantages, ESP is anticipated to become a spotlighted bonding material in the assembly of flexible electronics and electronic modules in automotive vehicles.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.2
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• pp.52-55
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• 2006

The OLEDs(Organic Light-Emitting Diodes) structure organizes the bottom layer using glass, ITO(indium thin oxide), hole injection layer, hole transport layer, emitting material layer, electron transport layer, electron injection layer and cathode using metal. OLED has various advantages. OLEDs research has been divided into structural side and emitting material side. The amount of emitting light and luminescence efficiency has been improved by continuing effort for emitting material layer. The emitting light mechanism of OLEDs consists of electrons and holes injected from cathode and anode recombination in emitting material layer. The mobilities of injected electrons and holes are different. The mobility of holes is faster than that of electrons. In order to get high luminescence efficiency by recombine electrons and holes, the balance of their mobility must be set. The more complex thin film structure of OLED becomes, the more understanding about physical phenomenon in each interface is needed. This paper observed what the thickness change of hole transport layer has an affection through the below experiments. Moreover, this paper uses numerical analysis about carrier transport layer thickness change on the basis of these experimental results that agree with simulation results.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1459-1461
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• 2009

In this study, we prepared the multi-refraction film thin by ink-jet technique with sol-gel precursor. The precursors were prepared by using some transition metal alk-oxide and the tetraethylorthosilicate (TEOS) mixed separately with n-Butyl Alcohol and PVB (Poly(vinyl butyral)).The structure and morphology of the resulting films were investigated by atomic force microscope (AFM). It is shown that the shape of the pattern of the films would affect the refraction proportion.

• Corrosion Science and Technology
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• v.14 no.5
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• pp.226-231
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• 2015

In spite of highly advanced paint coating techniques, corrosion damage of marine metal and alloys increase more and more due to inherent micro-cracks and porosities in coatings formed during the coating process. Furthermore, flowing seawater conditions promote the breakdown of the protective oxide of the materials introducing more oxygen into marine environments, leading to the acceleration of corrosion. Various corrosion protection methods are available to prevent steel from marine corrosion. Cathodic protection is one of the useful corrosion protection methods by which the potential of the corroded metal is intentionally lowered to an immune state having the advantage of providing additional protection barriers to steel exposed to aqueous corrosion or soil corrosion, in addition to the coating. In the present investigation, the effect of flow velocity was examined for the determination of the optimum corrosion protection current density in cathodic protection as well as the corrosion rate of the steel. It is demonstrated from the result that the material corrosion under dynamic flowing conditions seems more prone to corrosion than under static conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.571-572
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• 2006

Tungsten CMP needs interconnect of semiconductor device ULSI chip and metal plug formation, CMP technology is essential indispensable method for local planarization. This Slurry development also for tungsten CMP is important, slurry of metal wiring material that is used present is depending real condition abroad. It is target that this research makes slurry of efficiency that overmatch slurry that is such than existing because focus and use colloidal silica by abrasive particle to internal production technology development. Compared selectivity of slurry that is developed with competitor slurry using 8" tungsten wafer and 8" oxide wafer in this experiment. And removal rate measures about density change of $H_2O_2$ and Fe particle. Also, corrosion potential and current density measure about Fe ion and Fe particle. As a result, selectivity find 83:1, and expressed similar removal rate and corrosion potential and current density value comparing with competitor slurry.

• Journal of the Korean institute of surface engineering
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• v.47 no.6
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• pp.311-315
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• 2014

Indium tin oxide (ITO) thin films (30 nm) were deposited on PET substrate by reactive DC magnetron sputtering using In/Sn(2, 5 wt.%) metal alloy target without intentionally substrate heating during the deposition under different DC powers of 70 ~ 110 W. The electrical properties were estimated by Hall-effect measurements system. The resistivity of ITO thin film deposited using In/Sn (5 wt.%) metal alloy target at low DC power increased with increasing annealing time. However, they increased with increasing annealing time at high DC power. In the case of ITO (Sn 2 wt%), we can't find clear change in resistivity with increasing annealing time. However, carrier density and mobility showed difference behavior due to change of oxygen vacancy.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.169-172
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• 2004

Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a $N_2$O gate oxide 30 $\AA$ by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for $N_2$O gate oxide 30 $\AA$, ultra thin gate oxide 30 $\AA$ was formed by using the $N_2$O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi$_2$ process was performed by RTP annealing at 850 $^{\circ}C$ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance( Ω /cont.) and higher capacitance-gate voltage(C- V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ～ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 $\AA$ proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 $\AA$ $N_2$O gate oxide.