Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.571-572
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- 2006
Development of Tungsten CMP (Chemical Mechanical Planarization) Slurry using New Abrasive Particle
새로운 연마입자를 이용한 텅스텐 슬러리 개발
- Yu, Young-Sam (Hanyang University) ;
- Kang, Young-Jae (Hanyang University) ;
- Kim, In-Kwon (Hanyang University) ;
- Hong, Yi-Koan (Hanyang University) ;
-
Park, Jin-Goo
(Hanyang University)
;
- Jung, Seok-Jo (ACE Hightec Co.) ;
- Byun, Jung-Hwan (ACE Hightec Co.) ;
- Kim, Moon-Sung (ACE Hightec Co.)
- 유영삼 (한양대학교 공학대학 재료화학공학부) ;
- 강영재 (한양대학교 공학대학 재료화학공학부) ;
- 김인권 (한양대학교 공학대학 재료화학공학부) ;
- 홍의관 (한양대학교 공학대학 재료화학공학부) ;
-
박진구
(한양대학교 공학대학 재료화학공학부)
;
- 정석조 ;
- 변정환 ;
- 김문성
- Published : 2006.06.22
Abstract
Tungsten CMP needs interconnect of semiconductor device ULSI chip and metal plug formation, CMP technology is essential indispensable method for local planarization. This Slurry development also for tungsten CMP is important, slurry of metal wiring material that is used present is depending real condition abroad. It is target that this research makes slurry of efficiency that overmatch slurry that is such than existing because focus and use colloidal silica by abrasive particle to internal production technology development. Compared selectivity of slurry that is developed with competitor slurry using 8" tungsten wafer and 8" oxide wafer in this experiment. And removal rate measures about density change of