The Surry Characteristic Using Monitoring System in MEMS CMP

MEMS CMP에서 모니터링 시스템을 이용한 슬러리 특성

  • 박성민 (부산대학교 정밀기계공학과) ;
  • 정석훈 (부산대학교 정밀기계공학과) ;
  • 박범영 (부산대학교 정밀기계공학과) ;
  • 이상직 (부산대학교 정밀기계공학과) ;
  • 정원덕 (부산대학교 정밀기계공학과) ;
  • 장원문 (부산대학교 정밀기계공학과) ;
  • 정해도 (부산대학교 기계공학부)
  • Published : 2006.06.22

Abstract

The planarization technology of Chemical-mechanical polishing(CMP), used for the manufacturing of multi-layer various material interconnects for Large-scale Integrated Circuits (LSI), is also readily adaptable as an enabling technology in MicroElectroMechanical System (MEMS) fabrication, particularly polysilicon surface micromachining. However, general LSI device CMP has partly distinction aspects, the pattern scale and material sorts in comparison with MEMS CMP. This study performed preliminary CMP tests to identify slurry characteristic used in general IC device. The experiment result is possible to verify slurry characteristic in MEMS structure material.

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