• 공업화학전망
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• 제23권3호
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• pp.32-41
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• 2020

사람들은 대부분의 시간을 실내에서 보내고 있으며, 실내에 존재하는 유해가스는 미량의 농도에도 불구하고 심각한 질환을 일으킬 수 있다. 금속산화물 반도체 가스센서는 감도가 우수하고, 구조가 간단하며, 초소형화가 가능한 장점이 있어 고가의 대형 장비를 사용하지 않고 실내 유해가스를 측정하는 데 효과적으로 이용될 수 있다. 본 기고문에서는 금속산화물 반도체를 이용한 가스 센서의 검지 원리를 고찰하고, 나노 구조 조절, 마이크로 리액터 및 이중층 구조를 이용한 가스 개질 등 실내 유해가스 측정을 위한 다양한 센서 설계방법을 소개하고자 한다.

• 센서학회지
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• 제29권4호
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.247-247
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• 2006

Chemical and physical synthesis routes were combined to prepare macroporous thin films of semiconducting metal-oxides such as $CaCu_{3}Ti_{4}O_{12}\;and\;TiO_{2}$ by sputtering onto (PMMA) microsphere templated substrates. Subsequently, the colloidal templates were removed by thermal decomposition. The remaining inorganic films comprised a monolayer of hollow hemispheres with diameter commensurate with that of the microspheres. This unique morphology increases the surface area and reduces the interfacial area between film and substrate. Consequently, the surface activity is markedly enhanced while deleterious interfacial effects between film and substrate are significantly reduced. Both effects are highly advantageous for gas sensing applications.

• 센서학회지
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• 제25권5호
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• pp.320-325
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• 2016

In this paper, we propose an AlGaN/GaN-based extended-gate metal-insulator-semiconductor high electron mobility transistor (MISHEMT)-type biosensor for detecting streptavidin-biotin complexes. We measure the drain current of the fabricated sensor, which varies depending on the antibody-antigen reaction of streptavidin with biotin molecules. To confirm the immobilization of biotin polyethylene glycol (PEG) thiol, we analyze the Au surface of a GaN sample using X-ray photoelectron spectroscopy (XPS). The proposed biosensor shows higher sensitivity than Si-based extended-gate metal oxide semiconductor field effect transistor (MOSFET)-type biosensor. In addition, the proposed AlGaN/GaN-based extended-gate MISHEMT-type biosensor exhibits better long-term stability, compared to the conventional AlGaN/GaN-based MISHEMT-type biosensor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.602-605
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• 2000

Recently, a study of intellectual smell recognition system is applied for the various fields such as control of food processing and survey of decay. A basic gas recognition system was implemented gases using four metal oxides semiconductor sensors as inputs. A CPLD chip of twenty thousand gates level was used for this purpose. The CPLD chip was designed and the availability of the one chip smell recognition system was tested.

• 센서학회지
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• 제4권3호
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• pp.80-88
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• 1995

본 논문에서는 Al 및 TiW 금속을 상하층 전극으로 사용하고 이들 금속사이에 절연물이 존재하는 금속-절연물-금속(metal-insulator- metal : MIM) 구조의 안티휴즈 소자를 만들고 금속층간 절연물의 성질에 따른 안티휴즈 특성에 대하여 연구하였다. 금속층간 절연물로는 R.F 스퍼터링법에의해 형성된 실리콘 산화막과 탄탈륨 산화막으로 구성된 이층 절연물을 사용하였다. 이러한 안티휴즈 구조에서 실리콘 산화막은 프로그램 전의 안티휴즈 소자를 통해 흐르는 누설전류를 감소시켰으며, 실리콘 산화막에 비해 절연 강도가 낮은 탄탈륨 산화막은 안티휴즈 소자의 절연파괴전압을 저 전압으로 낮추는 역할을 하였다. 최종적으로 제조된 $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ 구조에서 1 nA 이하의 누설전류와 약 9V의 프로그래밍 전압을 갖고 수 초내에 프로그램이 완성되는 전기적 특성이 안정된 안티휴즈 소자를 제조하였다. 그리고 이때 소자의 OFF 및 ON 저항은 각각 $3.65M{\Omega}$ 및 $7.26{\Omega}$이었다. 이와 같은 $Ta_{2}O_{5}/SiO_{2}$ 구조에서 각 절연물의 두께를 조절함으로써 측정 전압에 민감하고 재현성 있는 안티휴즈 소자를 제조할 수 있었다.

• 센서학회지
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• 제30권1호
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• pp.51-55
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• 2021

We demonstrated a polymer dielectric with low leakage characteristics through an optimal blade coating method for low-cost and large-scale fabrication of metal-insulator-metal (MIM) capacitors. Cross-linked poly(4-vinylphenol) (C-PVP), which is a typically used polymer dielectric, was coated on a 10 × 10 cm indium-tin-oxide (ITO) deposited glass substrate by changing the deposition temperature (TD) and coating velocity (VC) in the blade coating. During the blade coating, the thickness of the thin c-PVP varied depending on TD and VC owing to the 'Landau-Levich (LL) regime'. The c-PVP-dielectric-based MIM capacitor fabricated in this study showed the lowest leakage current characteristics (10-6 A/㎠ at 1.2 MV/㎠, annealing at 200 ℃) and uniform electrical characteristics when TD was 30 ℃ and VC was 5 mm/s. In addition, at TD = 30 ℃, stable leakage characteristics were confirmed when a different electric field was applied. These results are expected to positively contribute to applications with next-generation electronic devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.268-268
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• 2016

Chemical sensors have attracted much attention due to their various applications such as agriculture product, cosmetic and pharmaceutical components and clinical control. A conventional chemical and biological sensor is consists of fluorescent dye, optical light sources, and photodetector to quantify the extent of concentration. Such complicated system leads to rising cost and slow response time. Until now, the most contemporary thin film transistors (TFTs) are used in the field of flat panel display technology for switching device. Some papers have reported that an interesting alternative to flat panel display technology is chemical sensor technology. Recent advances in chemical detection study for using TFTs, benefits from overwhelming progress made in organic thin film transistors (OTFTs) electronic, have been studied alternative to current optical detection system. However numerous problems still remain especially the long-term stability and lack of reliability. On the other hand, the utilization of metal oxide transistor technology in chemical sensors is substantially promising owing to many advantages such as outstanding electrical performance, flexible device, and transparency. The top-gate structure transistor indicated long-term atmosphere stability and reliability because insulator layer is deposited on the top of semiconductor layer, as an effective mechanical and chemical protection. We report on the fabrication of InGaZnO TFTs with silver nanowire as the top gate electrode for the aim of chemical materials detection by monitoring change of electrical properties. We demonstrated that the improved sensitivity characteristics are related to the employment of a unique combination of nano materials. The silver nanowire top-gate InGaZnO TFTs used in this study features the following advantages: i) high sensitivity, ii) long-term stability in atmosphere and buffer solution iii) no necessary additional electrode and iv) simple fabrication process by spray.

• 한국식품저장유통학회지
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• 제12권4호
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• pp.361-366
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• 2005

Recoverable oil 농도별 처리에 따른 MOS(metal oxide sensor) 전자코를 이용한 향기 패턴 분석 결과 오일 함량이 증가함에 따라 제 1 주성분 값의 분포가 $0.05{\sim}-0.1$ 부근으로 이동하는 경향을 나타내었으며, 주성분 분석의 discrimination index가 89로서 첨가 농도에 따른 향기 패턴이 명확히 구별되고 있는 것으로 나타났다. 저장기간에 따른 향미 변화는 거의 없었으며 약간 감소하는 경향을 나타내었다. 저장기간에 따른 recoverable oil 잔존량을 분석한 결과 $0.01\%$와 $0.03\%$의 경우 14일까지는 완만한 감소를 나타냈으며, 21일까지는 거의 변화가 없었으나 $0.05\%$의 경우 7일까지 급격히 감소되어지고 21일까지 완만한 감소를 나타내었다. 저장기간에 따른 총체적 관능검사 결과 $0.03\%$ 처리구의 경우 0일차부터 14일차까지 거의 변화가 없었으며, 14일차 이후 급격한 감소를 나타내었다. 오렌지 풍미에 대한 관능검사 결과에서도 $0.03\%$ 처리구의 경우 14일째까지 거의 변화가 없었으나 14일째 이후 급격한 감소를 나타내었다.

• 한국전기전자재료학회논문지
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• 제37권2호
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• pp.208-214
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• 2024

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (R_on,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (R_s) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.