• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.64-71
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• 2020

eFuse OTP memory IP is required to trim the analog circuit of the gate driving chip of the power semiconductor device. Conventional NMOS diode-type eFuse OTP memory cells have a small cell size, but require one more deep N-well (DNW) mask. In this paper, we propose a small PMOS-diode type eFuse OTP memory cell without the need for additional processing in the CMOS process. The proposed PMOS-diode type eFuse OTP memory cell is composed of a PMOS transistor formed in the N-WELL and an eFuse link, which is a memory element and uses a pn junction diode parasitic in the PMOS transistor. A core driving circuit for driving the array of PMOS diode-type eFuse memory cells is proposed, and the SPICE simulation results show that the proposed core circuit can be used to sense post-program resistance of 61㏀. The layout sizes of PMOS-diode type eFuse OTP memory cell and 512b eFuse OTP memory IP designed using 0.13㎛ BCD process are 3.475㎛ × 4.21㎛ (= 14.62975㎛2) and 119.315㎛ × 341.95㎛ (= 0.0408mm2), respectively. After testing at the wafer level, it was confirmed that it was normally programmed.

• IMMUNE NETWORK
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• v.7 no.4
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• pp.173-178
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• 2007

Background: We studied the role for expression of CD40 and CD40L by CD4 and CD8 T cells in the generation of CD8 T cell response to minor histocompatibility antigen, H60. H60 is a cellular antigen to which CD8 responses require CD4 T cell help. Methods: CD40- or CD40L-deficient mice were adoptively transferred with normal CD4 or CD8 T cells or with memory CD4 or CD8 T cells, and were immunized with male H60 congenic splenocytes to induce CD8 T cell response to H60. Peripheral blood CD8 T cell from the immunized mice were stained with the H60 tetramer. Results: CD8 T cell response to H60 was not induced in both CD40- and CD40L-deficient mice. Adoptive transfer of $CD40^{+/+}$ CD8 T cells into CD40-deficient mice did not compensate the defect in inducing CD8 T cell response to H60, while the H60-specific CD8 T cells were activated in the CD40-deficient mice that were adoptively transferred with $CD40^{+/+}$ CD4 T cells. Adoptive transfer of $CD40L^{+/+}$ CD4 T cells into CD40L-deficient mice induced primary CD8 T cell response for H60 and the presence of $CD40L^{+/+}$ CD4 T cells was required even for memory CD8 T cells response to H60. Conclusion: Our results suggest that the CD40-CD40L interaction mediates the delivery of CD4 T cell help to naive and memory H60-specific CD8 T cells. While the expression of CD40L by CD4 T cells is essential, signaling through CD40 on CD8 T cells is not required for the induction of CD8 T cell response to H60.

• Proceedings of the Korean Society of Crop Science Conference
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• 2017.06a
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• pp.175-175
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• 2017

To understand molecular mechanisms underlying adaptation of plant cells to saline stress and stress memory, we developed Arabidopsis callus suspension-cultured cells adapted to high salt. Adapted cells to high salt exhibited enhanced tolerance compared to control cells. Moreover, the salt tolerance of adapted cells was stably maintained even after the stress is relieved, indicating that the acquired salt tolerance of adapted cells was memorized. In order to characterize metabolic responses of plant cells during adaptation to high salt stress as well as stress memory, we compared metabolic profiles of salt-adapted and stress-memorized cells with control cells by using NMR spectroscopy. A principle component analysis showed clear metabolic discrimination among control, salt-adapted and stress-memorized cells. Compared with control cells, metabolites related to shikimate metabolism such as tyrosine, and flavonol glycosides, which are related to protective mechanism of plant against stresses were largely up-regulated in adapted cell lines. Moreover, coniferin, a precursor of lignin, was more abundant in salt-adapted cells than control cells. Cell morphology analysis using transmission electron microscopy indicated that cell wall thickness of salt-adapted cells was significantly induced compared to control cells. Consistently, salt adapted cells contained more lignin in their cell walls compared to control cells. The results provide new insight into mechanisms of plant adaptation to saline stress as well as stress memory in metabolic level.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.110-116
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• 2004

We propose a novel sensing scheme, which operates by sensing the difference in voltage between a memory cell and a reference cell for a magneto-resistive random access memory (MRAM). A new midpoint-reference generation circuit is adopted for the reference cell to improve the sensing margin and to guarantee correct operation of sensing circuit for wide range of tunnel magneto resistance (TMR) voltages. In this scheme, the output voltage of the reference cell becomes nearly the midpoint between the cell voltages of high and low states even if the voltage across the magnetic tunnel junction (MTJ) varies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.300-304
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• 2008

A novel characterization method was investigated to estimate the trap generation during the program /erase cycles in nand flash memory cell. Utilizing Fowler-Nordheim tunneling current, floating gate potential and oxide electric field, we established a quantitative model which allows the knowledge of threshold voltage (Vth) as a function of either program or erase operation time. Based on our model, the derived results proved that interface trap density (Nit) term is only included in the program operation equation, while both Nit and oxide trap density (Not) term are included in the erase operation equation. The effectiveness of our model was tested using 50 nm nand flash memory cell with floating gate type. Nit and Not were extracted through the analysis of Program/Erase speed with respect to the endurance cycle. Trap generation and cycle numbers showed the power dependency. Finally, with the measurement of the experiment concerning the variation of cell Vth with respect to program/erase cycles, we obtained the novel quantitative model which shows similar results of relationship between experimental values and extracted ones.

• YAKHAK HOEJI
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• v.52 no.5
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• pp.384-393
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• 2008

We examined the effect of green tea extract (GTE) and L-theanine combination on the $A{\beta}_{1-42}$-induced memory dysfunction. GTE and combination were administrated into mice for 3 weeks followed by injection of $A{\beta}_{1-42}$ to induce memory impairment. GTE and L-theanine administration significantly improved cognitive ability and reduced $A{\beta}_{1-42}$ level accompanied with the inhibition of neuronal cell death and activities of secretase. These results suggest that GTE and L-theanine combination may be a useful for preventing for the development or progression of Alzheimer's disease.

• KIPS Transactions on Computer and Communication Systems
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• v.10 no.9
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• pp.235-242
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• 2021

Most data scrambling schemes generate pure random codes. Unlike these schemes, we propose a variable density scrambling scheme (VDSC) that differentiates densities of generated codes. First, we describe conditions and methods to translate plain codes to cipher codes with different densities. Then we apply the VDSC to flash memory such that preferred cell states occur more than others. To restrain error rate, specifically, the VDSC controls code densities so as to increase the ratio of center state among all possible cell states in flash memory. Scrambling experiments of data in Windows and Linux systems show that the VDSC increases the ratio of cells having near-center states in flash memory.

• Journal of Applied Reliability
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• v.10 no.1
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• pp.65-71
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• 2010

NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

• Journal of Oriental Neuropsychiatry
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• v.19 no.3
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• pp.85-100
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• 2008

Objective: This experiment was designed to investigate the effect of the KSKH hot water extract & ultra-fine powder on microglia and memory deficit model. Method: The effects of the KSKH hot water extract on expression of IL-1$\beta$, IL-6, TNF-$\alpha$ mRNA and production of IL-1$\beta$, IL-6, TNF-$\alpha$ in BV2 microglial cell line treated by lipopolysacchaide(LPS) were investigated. The effects of the KSKH hot water extract & ultra-fine-fine powder on the behavior of the memory deficit mice induced by scopolamine and AChE in serum of the memory deficit mice induced by scopolamine were investigated. Results: 1. The KSKH hot water extract suppressed the expression of IL-1$\beta$, IL-6, TNF-$\alpha$ mRNA in BV2 microglial cell line treated by LPS. 2. The KSKH hot water extract suppressed the production of IL-1$\beta$, IL-6, TNF-$\alpha$ in 100$\mu g/m\ell$ concentration of BV2 microglial cell line culture supernatant. 3. The KSKH hot water extract & ultra-fine powder decreased AChE activation significantly in the serum of the memory deficit mice induced by scopolamine. 4. The KSKH hot water extract & ultra-fine powder showed significant effect on memory impairment in the stop-through latency type of Morris water maze test. Conclusions: This experiment shows that the KSKH hot water extract & ultra-fine powder might be effective for the prevention and treatment of amnesia and Alzheimer's disease. Investigation into the clinical use of the KSKH hot water extract & ultra-fine powder for amnesia and Alzheimer's disease is suggested for future research.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.32-39
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• 1998

This paper presents the experimental results on the 3-electrode DC-PDP which has a common electrode to improve the PDP life cycle. The measured DC characteristic proves the effectiveness of common electrode absorbing about half of discharge currents. The waveforms for pulse memory operation of3-electrode PDP without crosstalk could also be determined from the I-V characteristics. The pulse memory drives of 8*8 cell array show the frequency response fo memory margin and the luminance efficiency of 3-electrode PDP are quite different from genrally known characteristics of 2-electrode DC-PDP.