• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1029-1033
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• 2004

In this paper, we propose a new Suppressed Sidewall Injection Magnetotransistor(SSIMT) architecture, which allows to overcome the restriction of the standard CMOS technology and achieve high linearity. The proposed SSIMT is designed based on the Hynix 0.6 um standard CMOS technology. The fabricated SSIMT has been experimentally verified. The SSIMT shows that the change of collector current is extremely linear as a function of the magnetic induction at $I_{B}$ =500$\mu$A, $V_{CE}$ =2V and VSE =5 V. The relative sensitivity is up to 120 %/T. The magnetic conversion offset is about 79 mT with 30.5 %/T relative sensitivity. The nonlinearity of the fabricated SSIMT is measured about 1.4 %.%.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.1-8
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• 1998

We have simulated the operating characteristics of the magnetotransistor(MAGFET) by the finite element method and suggested the optimum design conditions to get a maximum sensitivity, The magnetotransistor has been fabricated by CMOS standard processing according to the suggested design conditions and investigated its electromagnetic characteristics. The sensitivity of the magnetotransistor depends on the ratio of width(W) to length(L) of active area rather than its size, and has a maximum when W/L = 1. The relative sensitivity of a fabricated magnetotransistor was 2.53 %/T.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.253-256
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• 1991

Tie constructed the equivalent circuit of the magnetotransistor by the representation of the operating principle as two independent current sources. The equivalent circuit has been analyzed quantatively and the calculated values agreed to the experimental ones. It has been found out that the structure of MT inflenuces on the relative sensitivity and the structure parameters can be extracted from the equivalent circuit.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1413-1415
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• 1994

A novel magnetotransistor using a separated drift field with the guard ring around the emitter has been designed and fabricated. The operating principle of the proposed magnetic field sensor is based on the emitter injection modulation. The $p^+$ guard ring around the n-type emitter confines drifted electrons in the emitter, hence the induced Hall voltage in the emitter is increased. The measured relative sensitivity of the separated drift magnetotransistor with the guard ring is about 100 times larger than that without the guard ring.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.7
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• pp.1127-1134
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• 1994

The analytical model for the induced Hall field in the magnetotransistor considering the diffusion of carriers has been proposed and verified by experiment and simulation. Previous models for the induced Hall field in the magnetotransistor do not consider the influence of the diffusion carrier transport. However, the carrier diffusion in the base region of magnetotransistors cannot be neglected and should be considered to evaluated the Hall field in the magnetotransistors accurately. We have measured the Hall voltage in the base region of the fabricated magnetotransistors. The measured values have been compared with the numerical results evaluated from our diffusion model as well as the calculated results from the conventional model. The evaluated Hall voltage from the diffusion model agrees well with the measured values while the sign of the Hall voltage calculated by the conventional model is opposite to that of the measured values in the saturation region. This discrepancy is due to the fact that the diffusion model considers the carrier diffusion while the conventional one does not. The Hall field model including the influence of carrier diffusion may be an important tool to optimize the device structure and to understand the operating principle of the magnetotransistor.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1434-1436
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• 1995

We designed and fabricated a highly sensitive magnetotransistor which employes the emitter region as a Hall plate for inducing Hall voltage across the emitter. The Hall voltage modulates the emitter basic junction bias on both sides of the emitter so that a large collector current difference is resulted. The specially designed $p^+$ ring around the emitter enhances accumulation of drifted electrons in the emitter and thus the Hall voltage. A relative sensitivity of 240/tesla is measured by operating the device in the saturation mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.168-171
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• 2002

A SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this thesis. The prototype is fabricated by using the Hynix 0.6$\mu\textrm{m}$ P-substrate twin-well double poly three-metal CMOS Process. The fabricated SSIMT shows that variation of the collector current is extremely linear by varing the magnetic induction from -200mT to 200mT at I$\_$B/=500${\mu}$A, V$\_$CE/=2V and V$\_$SUB/=5V. The relative sensitivity is up to 120%/T. At B = 0, magnetic offset is about 79mT, there relative sensitivity is 30.5%/T. The nonlinearity of the fabricated SSIMT is measured about 1.4%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.697-700
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• 2007

A novel 2-Dimensional Suppressed Sidewall Injection Magnetotransistor (SSIMT) with high linearity has been fabricated on the standard CMOS technology and experimentally verified. The novel 2-Dimensional SSIMT overcomes the restriction of the standard CMOS technology. Experimental results of the fabricated 2-Dimensional SSIMT show that the variation of each collector output currents are extremely linear as a function of magnetic field from -200mT to 200mT at $I_B = 1 mA,\;V_{CE} = 5 V\;and\;V_{SE} = 5 V$. The relative sensitivity shows up to 13 %/T. The measured nonlinearity of the fabricated device is about 0.9%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.443-446
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• 2003

A 2-Dimensional SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this paper. The prototype is fabricated by using the Hynix $0.6{\mu}m$ CMOS Process. The fabricated SSIMT shows that the variation of each collectors current are extremely linear by varing the magnetic induction from -200mT to 200mT at $I_B\;:\;1000{\mu}A,\;V_{CE}\;=\;5V\;and\;V_{SUB}\;=\;5V$. The relative sensitivity is up to 13%/T. At B = 0, magnetic offset is about 40mT, there relative sensitivity is 4.72%/T. The nonlinearity of the fabricated 2-D SSIMT is measured about 1.2%.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.5
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• pp.779-788
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• 1994