The Effect of the Guard Ring around the Emitter on the Sensitivity of the Highly Sensitive Separated Drift Field Magnetotransistor

에미터 주위의 guard ring이 분리된 전계를 갖는 고감도 자기 트랜지스터의 민감도에 미치는 영향

A novel magnetotransistor using a separated drift field with the guard ring around the emitter has been designed and fabricated. The operating principle of the proposed magnetic field sensor is based on the emitter injection modulation. The $p^+$ guard ring around the n-type emitter confines drifted electrons in the emitter, hence the induced Hall voltage in the emitter is increased. The measured relative sensitivity of the separated drift magnetotransistor with the guard ring is about 100 times larger than that without the guard ring.