• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1091-1097
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• 2013

This paper presents a rectifier with comparator using unbalanced body biasing in $0.11{\mu}m$ RF CMOS process. It is composed of MOSFETs and two comparators. The comparator is used to reduce reverse leakage current which occurs when the load voltage is higher than input voltage. For the comparator, unbalanced body biasing is devised. By using unbalanced body biasing, reference voltage for comparator changing from high state to low state is increased, and it reduces time interval for leakage current to flow. 13.56 MHz 2 Vpp signal is used for input and $1k{\Omega}$ resistor and 1 nF capacitor are used for output load for simulation and experimental environment. In simulation environment, voltage conversion efficiency(VCE) is 87.5 % and Power conversion efficiency(PCE) is 50 %. When the rectifier is measured, VCE shows 90.203 % and PCE shows 45 %.

• Journal of Satellite, Information and Communications
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• v.10 no.4
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• pp.1-5
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• 2015

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different partial p-well(PPW) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device shows typical SCR-like characteristics with low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW_PGM(primary gate middle) and optimal CPS(counter pocket source) implant demonstrate the stable ESD protection performance with high latch-up immunity.

• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.21-26
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• 2016

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different implant of channel blocking region was discussed for high voltage I/O applications. A conventional NSCR standard device shows low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified channel blocking structure demonstrate the improved ESD protection performance as a function of channel implant variation. Therefore, the channel blocking implant was a important parameter. Since the modified device with CPS_PDr+HNF structure satisfied the design window, we confirmed the applicable possibility as a ESD protection device for high voltage operating microchips.

• Proceedings of the KIPE Conference
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• 2004.11a
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• pp.71-75
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• 2004

In this paper, in order to develop a simple and high efficient ballast without an external igniter, a half-bridge type ballast with a coupled inductor and a frequency controlled synchronous rectifier is proposed. The internal LC resonance of the buck converter is used In generate a high voltage pulse for the ignition, and the coupled inductor filter is used for steady state ripple cancellation. Also, a synchronous buck converter is applied for the DC/DC converter stage. In order to improve the efficiency of the ballast, a frequency control method is proposed. This scheme reduces a circulation current and turn off loss of the MOSFET switch on the constant power operation, which results in increase of the efficiency of the ballast system about $4\%$, compared to a fixed frequency control. It consists a 2-stage version ballast with a PFC circuit. The results are verified with hardware experiments.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.6
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• pp.16-21
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• 2005

In paper, propose new partial resonance ZCS PWM controlled High frequency insulating Full-bridge DC/DC converter not using exciting current of high frequency transformer. It is compared with the existing principles in characteristics. It also realizes a widely stabilized ZVS operating using new ON-OFF control method at synchronized power rectification MOSFET of high frequency insulating transformer secondary. Besides, it is brought over 97[%] measurement efficiency by proposed DC-DC converts. It is proved effectiveness of new methods using DC UPS PWM rectifier as switching power supply.

• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.27-32
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• 2016

A conventional double diffused drain n-type MOSFET (DDD_NMOS) device shows SCR behaviors with very low snapback holding voltage and latch-up problem during normal operation. However, a modified DDD_NMOS-based silicon controlled rectifier (DDD_NSCR_CPS) device with a counter pocket source (CPS) structure is proven to increase the snapback holding voltage and on-resistance compare to standard DDD_NSCR device, realizing an excellent electrostatic discharge protection performance and the stable latch-up immunity.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.2
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• pp.89-96
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• 2000

This paper describes the forward type pulse power supply which is the simple circuit configuration and easy to be managed using a power semiconductor switching device(Power-MOSFET) in the view of commercialization. The maximum value of output pulse voltage of the proposed pulse power supply system can be realized by the variation of phase angle($\phi$) of bridge rectifier circuit and also its pulse period is determined by the duty ratio of Power-MOSFET. The principle of basic operating and the operating characteristics of the forward type pulse power supply are estimated by the switching frequency, the variation of phase angle($\phi$)It is shown that theoretical and experimental results are in good agreement by comparing simulation and experimental results of proposed pulse power supply when a lamp type ozonizer can be used as a load. This proposed pulse power system shows that it can be practically used in the future as a power source system in various fields.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.548-552
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• 2007

본 논문에서는 연료전지자동차의 저전압 배터리 충${\cdot}$방전을 위한 3상 양방향 DC-DC 컨버터를 제안한다. 제안한 3상 컨버터는 기존의 단상 컨버터에 비해 인터리빙 효과의 증대로 인한 입${\cdot}$출력 필터 사이즈 감소와 변압기의 이용률 증가로 인한 VA정격의 감소가 가능하며, 기존의 위상제어 방식의 3상 컨버터와 달리 입${\cdot}$출력전압이나 부하변동에 따른 무효 전류의 중가 문제가 없다. 또한 MOSFET 스위치를 사용하여 고전압 측에서는 비대칭 소프트 스위칭을 성취할 수 있고, 저전압 측에서는 동기정류 방식을 적용하여 도통손실을 감소시킬 수 있어 효율과 전력밀도를 더욱 향상 시킬 수 있다. 본 논문에서는 제안하는 3상 양방향 DC-DC 컨버터의 동작원리와 기존방식과의 비교분석을 수행하였으며 시뮬레이션을 통해 검증하였다.

• The Transactions of the Korean Institute of Power Electronics
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• v.3 no.4
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• pp.298-306
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• 1998

MOSFET 스위치로 구현된 고역률 부스트 정류기에 적합한 무손실 수동스너버가 턴오프 및 턴온 동안에 동작하는 등가회로로 기술된다. 이러한 등가회로는 주스위치에 가해지는 과도전압, 스너버 전류, 및 턴-오프 과도시간을 예측할 수 있도록 분석된다. 제안된 스너버와 결합된 부스트 컨버터의 주 스위치는 영전류에서 턴-온되기 때문에 턴-온 손실이 거의 없고, 제한된 전압 스트레스에서 턴-오프되므로 주 스위치의 전압 스트레스에 의한 파손을 방지할 수 있다. 또한 본 스너버를 사용한 부스트 컨버터의 제어 방법이 기존의 부스트 컨버터와 동일하기 때문에 기존의 부스트 컨버터용 제어회로를 그대로 쓸 수 있다. 제안된 에너지재생 수동스너버를 갖는 고역률 정류기가 구현되고 실험결과가 제시된다.

• Proceedings of the KIPE Conference
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• 2003.07b
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• pp.781-784
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• 2003

In this paper, high density on-board dc/dc converter using multi-layer PCB is proposed. Recently, the communication system wants power supply of open-frame, high density and low profile. So experimental converter was consisted of 3.3V/30A Quarter Brick size DC/DC Converter. To power height limit, coil of transformer, choke and circuits were consisted of multi layer PCB. Besides to improve of efficiency, made secondary synchronous rectifier Mosfet driving circuit. So total efficiency could be improved.