• Title/Summary/Keyword: MOS structure

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Design and Fabrication of $8{\times}8$ Foveated CMOS Retina Chip for Edge Detection (물체의 윤곽검출을 위한 $8{\times}8$ 방사형 CMOS 시각칩의 설계 및 제조)

  • Kim, Hyun-Soo;Park, Dae-Sik;Ryu, Byung-Woo;Lee, Soo-Kyung;Lee, Min-Ho;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • v.10 no.2
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    • pp.91-100
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    • 2001
  • A $8{\times}8$ foveated (log-polar) retina chip for edge detection has been designed and fabricated using CMOS technology. Retina chip performs photo-input sensing, edge extraction and motion detection and we focused edge extraction. The pixel distribution follows the log-polar transform having more resolution in the center than in the periphery and can reduce image information selectively. This kind of structure has been already employed in simple image sensors for normal cameras, but never in edge detection retina chip. A scaling mechanism is needed due to the different pixel size from circumference to circumference. A mechanism for current scaling in this research is channel width scaling of MOS transistor. The designed chip has been fabricated using standard $1.5{\mu}m$ single-poly double-metal CMOS technology.

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The characteristics of source/drain structure for MOS typed device using Schottky barrier junction (Schottky 장벽 접합을 이용한 MOS형 소자의 소오스/드레인 구조의 특성)

  • 유장열
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.35T no.1
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    • pp.7-13
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    • 1998
  • The VLSI devices of submicron level trend to have a lowering of reliability because of hot carriers by two dimensional influences which are caused by short channel effects and which are not generated in a long channel devices. In order to minimize the two dimensional influences, much research has been made into various types of source/drain structures. MOS typed tunnel transistor with Schottky barrier junctions at source/drain, which has the advantages in fabrication process, downsizing and response speed, has been proposed. The experimental device was fabricated with p type silicon, and manifested the transistor action, showing the unsaturated output characteristics and the high transconductance comparing with that in field effect mode. The results of trial indicate for better performance as follows; high doped channel layer to lower the driving voltage, high resistivity substrate to reduce the leakage current from the substrate to drain.

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Improved Electrical Characteristics of Symmetrical Tunneling Dielectrics Stacked with SiO2 and Si3N4 Layers by Annealing Processes for Non-volatile Memory Applications (비휘발성 메모리를 위한 SiO2와 Si3N4가 대칭적으로 적층된 터널링 절연막의 전기적 특성과 열처리를 통한 특성 개선효과)

  • Kim, Min-Soo;Jung, Myung-Ho;Kim, Kwan-Su;Park, Goon-Ho;Jung, Jong-Wan;Chung, Hong-Bay;Lee, Young-Hie;Cho, Won-Ju
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.5
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    • pp.386-389
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    • 2009
  • The electrical characteristics and annealing effects of tunneling dielectrics stacked with $SiO_2$ and $Si_{3}N_{4}$ were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_{3}N_{4}/SiO_2/Si_{3}N_{4}$ (NON), $SiO_2/Si_{3}N_{4}/SiO_2$ (ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS (metal-oxide-semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field. Furthermore, the increased tunneling current through engineered tunneling barriers related to high speed operation can be achieved by annealing processes.

Study on the turbulent structure for two-dimensional recirculating flows by curvature dependent 2-equation model (曲率修正2方程式모델을 利용한 2次元 再循環 亂流 流動構造의 硏究)

  • 박상우;정명균
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.11 no.3
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    • pp.444-453
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    • 1987
  • In the present study, a new computational closure model is proposed in order to contain physical models in the k- and .epsilon.- equations. The time scale of the third-order diffusive transport of turbulent kinetic energy in a curved streamline flow field is assumed as a function of a velocity time scale and a curvature time scale, the latter being derived from the analogy between buoyancy and streamline curvature effects on turbulence. The curvature time scale is represented by a combination of Brunt-Vaisala frequency of the curvature instability and the velocity time scale. Besides the modification of diffusive transport time scale, the destruction term in the dissipation rate equation is modeled to incorporate the streamline curvature effect on the dissipation rate of turbulent kinetic energy as a function of the ratio between velocity time scale and curvature time scale. The new curvature dependent 2-equation model is found to yield very good prediction accuracy for the various turbulent recirculating flows. Particurarly, the recovery of the mean velocity profile in the redeveloping region after the reattachment is correctly simulated by the present model.

End-to-end non-autoregressive fast text-to-speech (End-to-end 비자기회귀식 가속 음성합성기)

  • Kim, Wiback;Nam, Hosung
    • Phonetics and Speech Sciences
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    • v.13 no.4
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    • pp.47-53
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    • 2021
  • Autoregressive Text-to-Speech (TTS) models suffer from inference instability and slow inference speed. Inference instability occurs when a poorly predicted sample at time step t affects all the subsequent predictions. Slow inference speed arises from a model structure that forces the predicted samples from time steps 1 to t-1 to predict the sample at time step t. In this study, an end-to-end non-autoregressive fast text-to-speech model is suggested as a solution to these problems. The results of this study show that this model's Mean Opinion Score (MOS) is close to that of Tacotron 2 - WaveNet, while this model's inference speed and stability are higher than those of Tacotron 2 - WaveNet. Further, this study aims to offer insight into the improvement of non-autoregressive models.

A Study on Comparison of Pronunciation Accuracy of Soprano Singers

  • Song, Uk-Jin;Park, Hyungwoo;Bae, Myung-Jin
    • International journal of advanced smart convergence
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    • v.6 no.2
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    • pp.59-64
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    • 2017
  • There are three sorts of voices of female vocalists: soprano, mezzo-soprano, and contralto according to the transliteration. Among them, the soprano has the highest vocal range. Since the voice is generated through the human vocal tract based on the voice generation model, it is greatly influenced by the vocal tract. The structure of vocal organs differs from person to person, and the formants characteristic of vocalization differ accordingly. The formant characteristic refers to a characteristic in which a specific frequency band appears distinctly due to resonance occurring in each vocal tract in the vocal process. Formant characteristics include personality that occurs in the throat, jaw, lips, and teeth, as well as phonological properties of phonemes. The first formant is the throat, the second formant is the jaw, the third formant and the fourth formant are caused by the resonance phenomenon in the lips and the teeth. Among them, pronunciation is influenced not only by phonological information but also by jaws, lips and teeth. When the mouth is small or the jaw is stiff when pronouncing, pronunciation becomes unclear. Therefore, the higher the accuracy of the pronunciation characteristics, the more clearly the formant characteristics appear in the grammar spectrum. However, many soprano singers can not open their mouths because their jaws, lips, teeth, and facial muscles are rigid to maintain high tones when singing, which makes the pronunciation unclear and thus the formant characteristics become unclear. In this paper, in order to confirm the accuracy of the pronunciation characteristics of soprano singers, the experimental group was selected as the soprano singers A, B, C, D, E of Korea and analyzed the grammar spectrum and conducted the MOS test for pronunciation recognition. As a result, soprano singer B showed a clear recognition from F1 to F5 and MOS test result showed the highest recognition rate with 4.6 points. Soprano singers A, C, and D appear from F1 to F3, but it was difficult to find formants above 2kHz. Finally, the soprano singer E had difficulty in finding the formant as a whole, and MOS test showed the lowest recognition rate at 2.1 points. Therefore, we confirmed that the soprano singer B, which exhibits the most distinct formant characteristics in the grammar spectrum, has the best pronunciation accuracy.

Salient Region Detection Algorithm for Music Video Browsing (뮤직비디오 브라우징을 위한 중요 구간 검출 알고리즘)

  • Kim, Hyoung-Gook;Shin, Dong
    • The Journal of the Acoustical Society of Korea
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    • v.28 no.2
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    • pp.112-118
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    • 2009
  • This paper proposes a rapid detection algorithm of a salient region for music video browsing system, which can be applied to mobile device and digital video recorder (DVR). The input music video is decomposed into the music and video tracks. For the music track, the music highlight including musical chorus is detected based on structure analysis using energy-based peak position detection. Using the emotional models generated by SVM-AdaBoost learning algorithm, the music signal of the music videos is classified into one of the predefined emotional classes of the music automatically. For the video track, the face scene including the singer or actor/actress is detected based on a boosted cascade of simple features. Finally, the salient region is generated based on the alignment of boundaries of the music highlight and the visual face scene. First, the users select their favorite music videos from various music videos in the mobile devices or DVR with the information of a music video's emotion and thereafter they can browse the salient region with a length of 30-seconds using the proposed algorithm quickly. A mean opinion score (MOS) test with a database of 200 music videos is conducted to compare the detected salient region with the predefined manual part. The MOS test results show that the detected salient region using the proposed method performed much better than the predefined manual part without audiovisual processing.

Suppression of Gate Oxide Degradation for MOS Devices Using Deuterium Ion Implantation Method

  • Lee, Jae-Sung
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.4
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    • pp.188-191
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    • 2012
  • This paper introduces a new method regarding deuterium incorporation in the gate dielectric including deuterium implantation and post-annealing at the back-end-of-the process line. The control device and the deuterium furnace-annealed device were also prepared for comparison with the implanted device. It was observed that deuterium implantation at a light dose of $1{\times}10^{12}-1{\times}10^{14}/cm^2$ at 30 keV reduced hot-carrier injection (HCI) degradation and negative bias temperature instability (NBTI) within our device structure due to the reduction in oxide charge and interface trap. Deuterium implantation provides a possible solution to enhance the bulk and interface reliabilities of the gate oxide under the electrical stress.

A Study on XML-Based Electronic Documents (XML기반의 전자문서 처리방안에 관한 연구)

  • Nam Cheol-Gi;Jang Gil-Sang
    • Proceedings of the Society of Korea Industrial and System Engineering Conference
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    • 2002.05a
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    • pp.57-62
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    • 2002
  • Recently, due to the development of internet based information technology, organizations Is utilizing electronic documents as important media for processing business work and sharing Information exchange. These electronic documents are mos4 form like documents and are important user interfaces for business applications. But, presently web-based electronic documents are lack of the characteristics that are taken in documents, such as document writing rules and its workflow. This Paper deals with XML-based business document that include the structure, data, and logic and proposes the framework for validating the data and logic included within business documents using Prolog.

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Prediction of the transient response of the IGBT using the Spice parameter (Spice parameter를 이용한 IGBT의 과도응답 예측)

  • 이효정;홍신남
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.815-818
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    • 1998
  • The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.

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