Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Suppression of Gate Oxide Degradation for MOS Devices Using Deuterium Ion Implantation Method

  • Lee, Jae-Sung (Department of Information and Communication Engineering, Uiduk University)
  • Received : 2012.05.07
  • Accepted : 2012.06.12
  • Published : 2012.08.25
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Abstract

This paper introduces a new method regarding deuterium incorporation in the gate dielectric including deuterium implantation and post-annealing at the back-end-of-the process line. The control device and the deuterium furnace-annealed device were also prepared for comparison with the implanted device. It was observed that deuterium implantation at a light dose of $1{\times}10^{12}-1{\times}10^{14}/cm^2$ at 30 keV reduced hot-carrier injection (HCI) degradation and negative bias temperature instability (NBTI) within our device structure due to the reduction in oxide charge and interface trap. Deuterium implantation provides a possible solution to enhance the bulk and interface reliabilities of the gate oxide under the electrical stress.

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References

  1. J. W. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett., 68, 2526 (1996) [DOI: 10.1063/1.116172].
  2. C. H. Liu, M.T. Lee, C. Lin, J. Chen, K. Schruefer, J. Brighten, N. Rovedo, T. B. Hook, M. V. Khare, S.-F. Huang, C. Wann, T. C. Chen, T. H. Ning, IEEE IEDM 2001 P. 861 [DOI: 10.1109/IEDM.2001.979649].
  3. J. Wu, E. Rosenbaum, E. MacDonald, B. E. Li, B. Tracy, and P. Fang, IEEE Int. Reliability Physics Symp. 2000 p. 27 [DOI: 10.1109/RELPHY.2000.843887].
  4. J. Lee, Y. Epstein, A. C. Berti, J. Huber, K. Hess, J. W. Lyding, IEEE Trans. Electron Devices 46, 1812 (1999) [DOI: 10.1109/16.777177 ].
  5. W. F. Clark, T. G. Ference, T. B. Hook, K. M. Watson, S. W. Mitti, J .S. Burnham, IEEE Electron Device Lett. 20, 48 (1999) [DOI : 10.1109/55.737570 ].
  6. K. C. Harvey, U.S. Patent 6 017 806, Jan. 25, (2000).
  7. T. Kundu, D. Misra, IEEE Trans. Device and Material Reliability 6, 288 (2006) [DOI: 10.1109/TDMR.2006.876586].
  8. H. Park and C. R. Helms, J. Electrochem. Soc., 139, 2042 (1992) [DOI: 10.1149/1.2221171].
  9. K. Hess, I. C. Kizilyalli, J. W. Lyding, IEEE Trans. Electron Devices 45, 406 (1998) [DOI: 10.1109/16.658674].
  10. J. S. Lee, J. W. Lyding, K. Hess, IEEE Int. Reliability Phys. Symp. 2004 p. 685 [DOI: 10.1109/RELPHY.2004.1315451].
  11. D. K. Schroder, J. A. Babcock, J. Appl. Phys. 94, 1 (2003) [DOI: 10.1063/1.1567461].