• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.12
• /
• pp.1115-1121
• /
• 1998

MLS capacitor with lipid ultra thin films were deposited by Langmuir-Blodgett (LB) method on the silicon wafer. The current versus voltage and capacitance versus voltage relationships are depend on the applied voltage, electrode area and electrode materials. LB films deposited were made of L-$\alhpa$-DLPC, the 1 layer’s thickness of 35${\AA}$ was measured by ellipsometer. And MLS capacitor with different electrode materials, the work function of these materials was investigated to increase the leakage current. The result indicated the lower leakage current and very high saturation value of capacitance was reached within 700-800 pF when the two electrode was Ag. And $\varepsilon$1, $\varepsilon$2 versus photon energy showed good film formation.

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1297-1299
• /
• 1998

LB layers of L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multilayers was determined by ellipsometry. It was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitance and low leakage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLS capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.8
• /
• pp.628-636
• /
• 1998

LB layers L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multiayers was determined by ellipsometry. Ut was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitiance and low lekage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLD capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.155-158
• /
• 1998

MLS capacitor with lipid ultra thin films were deposited by Langmuir-Blodgett (LB) method on the sillicon wafer. The current versus voltage and capacitance versus voltage relationships are depend on the applied voltage, electrode area and electrode materials. LB films deposited were made of L-$\alpha$-DLPC, the 1 layer's thickness of 35$\AA$ was measured by ellipsometer. And MLS capacitor with different electrode materials, the work function of these materials was investigated to increase the leakage current. The result indicated the lower leakage current and very high saturation value of capacitance was reached within 700-800 pF when the two electrode was Ag. And $\varepsilon$$_1$, $\varepsilon$$_2$ versus photon energy showed good film formation.

• Proceedings of the KAIS Fall Conference
• /
• 2011.12a
• /
• pp.194-195
• /
• 2011

런던협약 '96의정서' 발효에 의해 2012년부터 하수 슬러지 처분 방법 중 대부분을 차지하고 있는 유기성 슬러지 등 폐기물의 해양투기가 전면 금지되기 때문에 효과적인 하수 슬러지 처분 및 슬러지 감량화에 대한 기술 수요가 꾸준히 제기되고 있다. 본 연구에서는 슬러지 처분법의 대안으로 슬러지 가용화 연구에 고전압 임펄스을 접목시켜 슬러지 가용화 연구를 수행하였다. 본 연구에서 사용된 고전압 임펄스 장치는 power supply, HV generator, capacitor와 switch, impulse generator로 구성되어 있다. 고전압 임펄스에 의한 슬러지의 특성 변화를 관찰하였다. HVI를 90분 인가하였을 경우 하수 슬러지의 MLSS와 MLVSS는 각각 평균 8%와 9% 감소하였다. 또한 SCOD는 341% 증가하였고, TN과 TP는 각각 34%와 90.9% 증가하였다.