Abstract
MLS capacitor with lipid ultra thin films were deposited by Langmuir-Blodgett (LB) method on the silicon wafer. The current versus voltage and capacitance versus voltage relationships are depend on the applied voltage, electrode area and electrode materials. LB films deposited were made of L-$\alhpa$-DLPC, the 1 layer’s thickness of 35${\AA}$ was measured by ellipsometer. And MLS capacitor with different electrode materials, the work function of these materials was investigated to increase the leakage current. The result indicated the lower leakage current and very high saturation value of capacitance was reached within 700-800 pF when the two electrode was Ag. And $\varepsilon$1, $\varepsilon$2 versus photon energy showed good film formation.
