• Title/Summary/Keyword: Lipid ultra thin film

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Elctrical Properties of DLPC Lipid Membrane Fabricated on the Silicon Wafer (실리콘 웨이퍼 위에 제작된 DLPC 지질막의 전기적특성)

  • 이우선;김충원;이강현;정용호;김남오;김상용
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.12
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    • pp.1115-1121
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    • 1998
  • MLS capacitor with lipid ultra thin films were deposited by Langmuir-Blodgett (LB) method on the silicon wafer. The current versus voltage and capacitance versus voltage relationships are depend on the applied voltage, electrode area and electrode materials. LB films deposited were made of L-$\alhpa$-DLPC, the 1 layer’s thickness of 35${\AA}$ was measured by ellipsometer. And MLS capacitor with different electrode materials, the work function of these materials was investigated to increase the leakage current. The result indicated the lower leakage current and very high saturation value of capacitance was reached within 700-800 pF when the two electrode was Ag. And $\varepsilon$1, $\varepsilon$2 versus photon energy showed good film formation.

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The Deposition Characterization of DLPC Lipid Membrane Fabricated by Moving wall Type LB Method (Moving wall형 LB법에 의하여 제작된 DLPC 지질막의 누적특성)

  • 이우선;최창주;정용호;김남오;이경섭;장의구;김태성
    • Electrical & Electronic Materials
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    • v.10 no.6
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    • pp.548-554
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    • 1997
  • We fabricated the sample of ultra thin lipid membrane(L-$\alpha$-DLPC) by LB method. The $\pi$-A isotherm of the DLPC was measured at the air-water interface varying with the compressing speed and amounts of solutions for spreading. For the good property of lipid monolayer film, it was necessary to prepare at the lower speed of compressing, with an appropriate volume of solutions for spreading. Absorption, transmitance and intensity with the UV spectrophotometer were measured. The Z-type multilayers showed good characteristics better than Y-type. So we found building-up of structurally high quality LB films is essential to study properties of the films and to get reproducible data.

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Fabrication of DLPC LB films with MIS structure and I-V characteristics (MIS 구조의 DLPC LB 막의 제작과 전압-전류 특성)

  • 이우선;정용호;정종상;손경춘;김상용;장의구;이경섭
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.155-158
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    • 1998
  • MLS capacitor with lipid ultra thin films were deposited by Langmuir-Blodgett (LB) method on the sillicon wafer. The current versus voltage and capacitance versus voltage relationships are depend on the applied voltage, electrode area and electrode materials. LB films deposited were made of L-$\alpha$-DLPC, the 1 layer's thickness of 35$\AA$ was measured by ellipsometer. And MLS capacitor with different electrode materials, the work function of these materials was investigated to increase the leakage current. The result indicated the lower leakage current and very high saturation value of capacitance was reached within 700-800 pF when the two electrode was Ag. And $\varepsilon$$_1$, $\varepsilon$$_2$ versus photon energy showed good film formation.

  • PDF