• 한국항행학회논문지
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• 제24권6호
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• pp.573-580
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• 2020

본 논문에서는 회로의 기본 구성요소인 인덕터와 커패시터를 LTCC 다층 기판에서 활용이 가능한 형태로 구성하여 각각의 특성을 분석하였다. 분석을 위해 사용된 인덕터와 커패시터는 유전율 7인 유전체 내부에 각각 사각형 나선 구조와 MIM 구조로 설계되었으며, 인덕터의 감은 수와 커패시터의 적층 수를 달리하여 제작하고 측정하였다. 측정된 결과는 커브피팅 방식을 이용하여 논문에서 제안한 등가회로의 각 소자 값을 추출하였고 추출된 결과를 토대로 제안한 등가회로의 타당성을 검증하였다. 분석된 인덕터와 커패시터는 라이브러리 형태로 구현하였으며 일립틱 타입의 5차 LPF 설계에 적용하여 그 활용성을 입증하였다. LPF는 실제 제작을 통해 측정되었으며, 결과적으로 통과 대역인 DC ~ 3.7 GHz 대역에서 삽입손실이 최대 1.0 dB, 반사손실이 19.2 dB, 저지 대역에서의 감쇄 값이 23.9 dB로 모든 항목에서 설계 목표치에 근접한 결과를 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.62-62
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• 2008

As micro-system move toward higher speed and miniaturization, requirements for embedding the passive components into printed circuit boards (PCBs) grow consistently. They should be fabricated in smaller size with maintaining and even improving the overall performance. Miniaturization potential steps from the replacement of surface-mount components and the subsequent reduction of the required wiring-board real estate. Among the embedded passive components, capacitors are most widely studied because they are the major components in terms of size and number. Embedding of passive components such as capacitors into polymer-based PCB is becoming an important strategy for electronics miniaturization, device reliability, and manufacturing cost reduction Now days, the dielectric films deposited directly on the polymer substrate are also studied widely. The processing temperature below $200^{\circ}C$ is required for polymer substrates. For a low temperature deposition, bismuth-based pyrochlore materials are known as promising candidate for capacitor $B_2Mg_{2/3}Nb_{4/3}O_7$ ($B_2MN$) multi layers were deposited on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system at room temperature. The physical and structural properties of them are investigated by SEM, AFM, TEM, XPS. The dielectric properties of MIM structured capacitors were evaluated by impedance analyzer (Agilent HP4194A). The leakage current characteristics of MIM structured capacitor were measured by semiconductor parameter analysis (Agilent HP4145B). 200 nm-thick $B_2MN$ muti layer were deposited at room temperature had capacitance density about $1{\mu}F/cm^2$ at 100kHz, dissipation factor of < 1% and dielectric constant of > 100 at 100kHz.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1507_1508
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• 2009

This study proposes a composite right/left-handed transmission line (CRLH-TL) that permits switching between the right-handed (RH) and left-handed (LH) modes using single crystalline silicon (SCS) RF MEMS switches. It is possible to change modes from the RH to LH mode, or vice versa, by controlling the admittance of capacitors and the impedance of inductors using switch operations. The proposed switchable CRLH-TL consists of SCS RF MEMS switches, metal-insulator-metal (MIM) capacitors and shunt inductors. At 8 GHz, the fabricated device shows a phase response of $87^{\circ}$ with an insertion loss of 2.7 dB in the LH mode, and a phase response of $-77^{\circ}$ with an insertion loss of 0.56 dB in the RH mode.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.387-390
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• 1998

In this paper, HBT's with lower phase noise and passive elements, such as resistors, capacitors and inductors, for resonance and impedance matching networks are designed, fabricated, tested, and carefully analysed, respectively, and then, they are integrated for the design and fabrication of functional X-band oscillators with lower phase noise. Epi-wafers for HBT's with the structure of graded $Al_{x}$G $a_{1-x}$ As emitter and C-doped base layer of 700.angs. thick were used to specially emphasize the improvement of $f_{T}$ and $f_{max}$, and the lowering of phase noise, in design aspects. At the test frequencies of 12GHz, capacitances of MIM capacitors, spiral inductor, and resistances are 0.5~10pF, 0.4~11.06nH, and 20~1,380.ohm., respectively. The emitter size of HBY's for the X-band MMIC oscillators is 3*10u $m^{2}$, and find chip size is 0.9*0.9m $m^{2}$..EX>.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.342-347
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• 2007

$Bi_6Mg_2Nb_4O_{21}(BMN)$ thin films were deposited at various substrates by sputtering system for embedded capacitor applications. BMN thin films deposited at room temperature are manufactured as MIM(Metal/Insulator/Metal) structures. Dielectric properties and leakage current density were investigated as a function of various substrates and thickness of BMN thin films. Leakage current density of BMN thin films deposited on CCL(Copper Clad Laminates) showed relatively high value ($1{\times}10^{-3}A/cm^2$) at an applied field of 300 kV/cm on substrates, possibly due to relatively high value of roughness(rms $50{\AA}$) of CCL substrates. 100 nm-thick BMN thin films deposited on Cu/Ti/Si substrates showed the capacitance density of $300 nF/cm^2$, a dielectric constant of 32, a dielectric loss of 2 % at 100 kHz and the leakage current density of $1{\times}10^{-6}A/cm^2$ at an applied field of 300 kV/cm. BMN capacitors are expected to be promising candidates as embedded capacitors for printed circuit board(PCB).

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2015년도 추계학술대회
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• pp.861-862
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• 2015

In this paper we present a low area 12-bit SAR ADC (Successive Approximation Register Analog-to-Digital Converter). The proposed circuit is fabricated using Magnachip/SK Hynix 1-Poly 6-Metal $0.18-{\mu}m$ CMOS process, and it is powered by a 1.8-V supply. Total chip area is reduced by replacing the MIM capacitors with MOS capacitors instead of the capacitors consisting of overall part in chip area. The proposed circuit showed improved power dissipation of 1.9mW, and chip area of $0.45mm^2$ as compared to conventional research results at the power supply of 1.8V. The designed circuit also showed high SNDR (Signal-to-Noise Distortion Ratio) of 70.51dB, and excellent effective number of bits of 11.4bits.

• 한국재료학회지
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• 제15권2호
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• pp.139-142
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• 2005

[ $ZrO_2$ ] gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering and its structure, surface morphology and electrical peoperties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the $ZrO_2$ gate dielectric thin films by decreasing the number of interfacial traps at the $ZrO_2/Si$ interface. The carrier transport mechanism is dominated by the thermionic emission.

• 전자공학회논문지A
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• 제33A권7호
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• pp.121-126
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• 1996

In this paper an MMIC VCO which can be used in a double conversion TV tuner is designed, fabricated and measured. The VCO is designed using the small signal method and fabricated using ETRI GaAs MMIC foundry. The 3x200$\mu$m gate width MESFET with 1$\mu$m gate length is used for an active device and MIM capacitors, spiral inductors, thin film resitors are used as passive elements. The VCO has output power of 10.95dBm at 1955 MHz with 5V bias voltage and 4V tuning voltage. The oscillation frequency change form 1947 MHz to 1964 MHz is obtaine dby an external varactor diode connected to the gate with a tuning voltage from 0 V to 6V.

• 전자공학회논문지D
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• 제35D권4호
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• pp.1-8
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• 1998

An MMIC single-balanced upconverting mixer for PCS application has been successfully developed using an MMIC process employed by 1 .mu. ion implanted GaAs MESFET and passive lumped elements consisting of spiral inductor, Si3N4 MIM capacitors and NiCr resistors. The configuration of the mixer presented in this paper is two balanced cascode FET mixers with common-source self-bias circuits for single power supply operation. The dimension of the fabricated circuit including two active baluns intermodulation characteristic with two-tone excitation are also measured, showing -28.17 dBc at IF power of -30 dBm.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.926-929
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• 1999

In this paper, we have studied the role of sources gases, SiH$_4$, NH$_3$ and $N_2$, to produce Si-N and Si-H bond in PECVD. The correlations of a deposition rate, a refractive index and a permitivity were investigated with the NH$_3$ flow rate of 6, 9 and 12 sccm, and SiH$_4$ flow rate of 20, 30 and 40 sccm, and substrate temperature of 150, 250 and 35$0^{\circ}C$. But the $N_2$ flow rate and chamber pressure were fixed at 55 sccm and 700mTorr. And then MIM capacitors were fabricated and tested for MMIC applications.