• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1473-1478
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• 2018

In this study, we have developed a simple and cost-effective method to prevent edge bead formation by covering the edge of a chip-level substrate with heat-resistant tape during patterning using SU-8. Edge beads are a fundamental problem in photoresists and are particularly notable in high-viscosity fluids and thick coatings. Edge beads can give rise to an air gap between the substrate and the patterning mask during UV exposure, which results in non-uniform patterns. Furthermore, the sample may break since the edge bead is in contact with the mask. In particular, the SU-8 coating thickness of the chip-level substrates used in MEMS or BioMEMS may not be properly controlled because of the presence of edge beads. The proposed method to solve the edge bead problem can be easily and economically utilized without the need for a special device or chemicals. This method is simple and prevents edge bead formation on the sample substrate. Despite the small loss in the taping area, the uniformity of the SU-8 coating is improved from 50.9% to 5.6%.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1405-1408
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• 2008

Synchronization signal circuit system for low cross-talk stereoscopic display. We proposed the employment of the scanning beams of any adjacent scanning regions gradually scan from upper to down direction of the LED backlight panel.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.710-713
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• 2008

LED Scanning Backlight Stereoscopic Display with Shutter Glasses is provided to realize stereoscopic image viewing even in a liquid crystal display. The eye shutter signal is alternately switched from the left eye to the right eye with 120Hz of LCD Vertical synchronization (V-sync).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.825-826
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• 2009

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.5
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• pp.1073-1078
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• 2012

In this paper, we propose the MEMS system with Duffing equation to confirm nonlinear features in MEMS system. We also analyze nonlinear phenomena when adding the nonlinear term of another type. As a verification, we confirm chaotic motion by parameter variation through the time series, phase portrait and power spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.376-377
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• 2006

Chemical Mechanical Planarization (CMP) has emerged as an enabling technology for the manufacturing of multi-level metal interconnects used in high-density Integrated Circuits (IC). Recently, multi-level structures have been also widely used m the MEMS device such as micro engines, pressure sensors, micromechanical fluid pumps, micro mirrors and micro lenses. Especially, among the thin films available in IC technologies, polysilicon has probably found the widest range of uses in silicon technology based MEMS. This paper presents the characteristic of polysilicon CMP for multi-level MEMS structures. Two-step CMP process verifies that is possible to decrease dishing amount with two type of slurries characteristics. This approach is attractive because two-step CMP process can be decreased dishing amount considerably more then just one CMP process.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1407-1412
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• 2003

In MEMS devices, packaging induced stress or stress induced structure deformation become increasing concerns since it directly affects the performance of the device. In this paper, deformation behavior of MEMS gyroscope package subjected to temparature change is investigated using high-sensitivity $Moir{\acute{e}}$ interferometry. Using the real-time $Moir{\acute{e}}$ setup, fringe patterns are recorded and analyzed at several temperatures. Temperature dependent analyses of warpages and extensions/contractions of the package are presented. Linear elastic behavior is documented in the temperature region of room temperature to $125^{\circ}C$. Analysis of the package reveals that global bending occurs due to the mismatch of thermal expansion coefficient between the chip, the molding compond and the PCB.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.11-15
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• 2001

In this paper, hermetic sealing technology was studied for wafer level packaging of the RF-MEMS devices. With the flip-chip bonding method. this non-conductive B-stage epoxy sealing will be profit to the MEMS device sealing. It will be particularly profit to the RF-MEMS device sealing. B-stage epoxy can be cured by 2-step and hermetic sealing can be obtained. After defining 500 $\mu\textrm{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was, then, aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line could be maintained during the sealing process. The height of the seal-line was controlled within $\pm$0.6 $\mu\textrm{m}$ in the 4 inches wafer and the bonding strength was measured to about 20MPa by pull test. The leak rate, that is sealing characteristic of the B-stage epoxy, was about $10^{-7}$ cc/sec from the leak test.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.3
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• pp.31-36
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• 2017

In this paper, designed infrared (IR) emitter device for infrared scene projector (IRSP) which is used for evaluating the performance of IR sensor systems was simulated by using finite element analysis (FEA) tool and fabricated by using MEMS (Micro Electro-Mechanical System) technology. The performance of the fabricated IR emitter unit device was characterized in the vacuum chamber by using IR image microscope for MWIR($3{\sim}5{\mu}m$), which showed 423K apparent temperature (Tapp) and 22msec time constant (${\tau}$).

• Journal of the Korean Society for Precision Engineering
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• v.22 no.11 s.176
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• pp.173-181
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• 2005

We report on the design and fabrication of an electrostatic 2-axis MEMS stage possessing a platform with a size of $5{times}5mm^2$. The stage, as a key component, would be used in developing probe-based storage devices in the future. It was fabricated by forming numerous $5{\times}5{\mu}m^2$ etching holes in the central platform, as a result, reducing the total number of masks to 1, thereby simplifying the whole fabrication process. Experimental results show that the driving range of the stage was $32{\mu}m$ at the supplied voltage of 20V and the natural frequency was approximately 300Hz. The mechanical coupling between x- and y-motion was also measured and verified to be $25\%$.