• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.67-75
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• 1998

This paper examined the geometrical variables of microstrip to control the characteristic impedance of MCM interconnect and also with respect to the practical requirements, evaluated the critical lengths for attenuation, propagation delay, and crosstalk at 500 MHz frequency compared to at 50 MHz frequency. With the illustration of each MCM-L and MCM-D interconnect having 50 characteristic impedance, it was revealed that the most important geometrical variables to control the characteristic impedance of microstrip are eventually dielectric thickness and line width. In particular, the dielectric thickness of MCM-D interconnect must be controlled with tolerance below 2 m. It is clear that the attenuation does not give rise to signal distortion in the range of up to 500MHz frequency for both MCM-L and MCM-D interconnects. However, the propagation delay is so significant that both MCM-L and MCM-D interconnects should be matched with load at the 500 MHz frequency. For the MCM-D interconnect, the crosstalk voltage would not be high to generate the wrong signal on the neighboring line at 500 MHz frequency, but the MCM-L interconnect could not be used due to severe crosstalk. Eventually, it is clear that the transmission line behavior must be studied for the design of MCM substrate at the 500 MHz frequency.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.2
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• pp.13-20
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• 1998

고속 디지털 MCM 응용을 위해 MCM-D 와 MCM-SLC 배선에서 CMOS 버퍼의 신호상승시간에 따른 신호전송특성을 연구하였다. 고속신호처럼 버퍼의 내부저항이 배선의 임피던스보다 작아 발생하게 되는 과도한 ringing은 MCM-D와 같이 lossy line의 전송감쇠 효과로 overshooting 이나 undershooting을 줄일 수 있지만 ringing에 의한 신호왜곡을 근 본적으로 막기위해서는 CMOS버퍼와 배선사이에 적절한 종단을 통해 임피던스 비해 크면 배선의 캐패시턴스에 의해 RC 지연이 증가한다. 그런데 MCM-D 배선은 단위길이당 캐패 시턴스도 작고 배선길이를 줄일수 있으므로 총 RC 지연은 MCM-SLC보다 작았다. 결론적 으로 MCM-D 배선이 MCM-SLC 배선에 비해 고속 디지털 MCM기판으로 적합한 것을 알 수 있었다.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.31-36
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• 2000

We developed embedded inductors in MCM-D substrate for RF applications. The increasing demand for high density packaging was the driving forces to the development of MCM-D technology. Most of these development efforts have been focused on high performance digital circuits. However, recently there is a great need fur mixed mode circuits with a combination of digital, analog and microwave devices. Mixed mode modules often have a large number of passive components that are connected to a small number of active devices. Integration of passive components into the high density MCM substrate becomes desirable to further reduce cost, size, and weight of electronic systems while improving their performance and reliability. The proposed MCM-D substrate was based on Cu/photosensitive BCB multilayer and Ti/Cu is used to form the interconnect layer. Seed metal was formed with 1000 $\AA$ Ti/3000 $\AA$ Cu by sputtering method and main metal was formed with 3 $\mu\textrm{m}$ Cu by electrical plating method. The multi-turn sprial inductors were designed in coplanar fashion. This paper describe the manufacturing process of integrated inductors in MCM-D substrate and the results of electrical performance test.

• Polymer(Korea)
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• v.29 no.2
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• pp.122-126
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• 2005

The effect of Al-MCM-41 preparation methods on the catalytic degradation of linear low density polyethylene (LLDPE) was investigated. Al-MCM-41 catalysts were synthesized by direct method (Al-MCM-41-D) and post treatment method (Al-MCM-41-P) and their characteristics were elucidated by XRD, BET, $NH_3\;TPD,\;^{27}Al$ MAS NMR. TGA kinetic analysis showed that the catalytic activation energies of Al-MCM-41-D and Al-MCM-41-P were 191.54 and 114.26 kJ/mol, respectively. The higher catalytic activity of Al-MCM-41-P would be attributed to its smaller pore size as well as higher number of acid sites that are accessible.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.2
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• pp.7-12
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• 1998

감광성 BCB를 사용한 MCM-D기판에 신뢰성있는 비아형성을 위하여 BCB의 공정 특성과 C2F6를 사용한 플라즈마 cleaning 영향을 분석하였다. 절연막, 금속배선재료로 각각 감광성 BCB, Cu를 사용하여 MCM-D 기판을 제작 분석한 결과 BCB는 soft bake 후 초기 두께의 50%정도 두께 손실이 있었으며 해상도는 15um이었다. BCB층에 비아 형성후 C2F6 가스로 플라즈마 cleaning 하고 AES로 비아표면을 분석한 결과 유기물 C는 검출되지 않은 반면 플라즈마 cleaning을 하지 않은 비아를 분석한 결과 유기물 성분의 C가 많이 검출되었 고 Ar 스퍼터에 의해서도 완전히 제거되지 않았다. 따라서 감광성 BCB를 절연막으로 사용 한 MCM-D 기판 제작공정에서 비아 형성후 C2F6를 이용한 플라즈마 cleaning의 필요성을 확인하였다.

• Journal of the Microelectronics and Packaging Society
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• v.4 no.2
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• pp.25-32
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• 1997

대용량, 고속 정보처리가 요구되는 System의 모듈은 Data 처리의 고속성 및 회로의 고집적이 가능한 MCM의 형태로 구현되어 ATM, GPS 및 PCS 등의 분야에 광범위하게 응 용되고 있다. 위와 같은 High Speed 응용분야에서의 System 성능은 Interconnect Line의 전달지연, 임피던스 부정합에 의한 신호 반사 손실. 신호선 간의 Crosstalk, Ground Bounce 등의 현상에 대한 최적화 여부에 결정적인 영향을 받는다. 그러나 Interconnect의 특성상 정 형이 존재하지 않으므로 추상적인 Library를 구축하는 형식으로 접근할 수밖에 없으며 이를 위하여 여러기본 구조를 정의한후 각 Dimension을 변수로 두고 해석 결과를 합성하여 Database화하는 접근방식이다. 본 논문에서는 MCM-D 공정을 이용하여 Interconnect Line 특성을 분석하고 Database화 하기 위한 Test Pattern을 구현하고 Time Domain reflectometry(TDR)을 이용하여 그특성들을 측정 분석하였다. Test pattern 제작은 MCM-D 공정으로 최소선폭 27$\mu$m, Via Hole 75$\mu$m으로 형성하였고 2 Layer Signal과 GND로 총 3Layer를 구현하였다. 특성분석을 위해 TDR장비와 모데링 및 Simulation S/W인 IPA 510 을 사용하였다. 이를 통해 MCM-D를 이용한 공정에서 Interconcet Line의 고주파 특성을 측정하고 정량화하여 LIbrary를 제작할수 있었다.

• Analytical Science and Technology
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• v.19 no.3
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• pp.211-217
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• 2006

Diphenyl amine (DPA) was polymerized inside the channels of the mesoporous silica (MCM-41). MCM-41 (C) and MCM-41 (D) were prepared with cetyltrimethyl ammonium bromide (CTAB) and dodecyltrimethyl ammonium bromide (DTAB), respectively and used as hosts. Initially, the self assembly of DPA inside the pores of MCM-41 was made in ${\beta}$-naphthalene sulfonic acid (NSA) medium and subsequently poly (diphenylamine), PDPA was formed by oxidative polymerization. $N_2$ adsorption-desorption measurements of PDPA loaded MCM-41 (C) and MCM-41 (D) show variations in pore volume and surface area between them. A tubular form of poly (diphenylamine), PDPA was envisaged to form in the pores of MCM-41 and supported by high resolution transmission microscopy. The presence of PDPA inside the channel of MCM-41 was further confirmed by FTIR spectroscopy, thermogravimetric analysis (TGA), X-ray diffraction.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.9 s.351
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• pp.64-68
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• 2006

Novel system-on-package (SOP) - D technology to improve the mechanical and thermal properties of a MCM-D substrate was suggested. Based on this investigation, the two types of band pass filters for the V-band application with unique structure were designed and implemented using 2-metals, 3-BCB layers. The first type using distributed resonator had the insertion loss below 2.6 dB at 55 GHz and group delay was below 0.06 ns. For the second type with edge coupled structure, the insertion loss and group delay were 3 dB and 0.1 ns, respectively. Suggested MCM-D substrate with band pass filter can be used to evaluate mm-Wave system including flip-chip bonded MMIC.

• Bulletin of the Korean Chemical Society
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• v.29 no.10
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• pp.1993-1997
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• 2008

In the present work, Diels-Alder reaction of cyclopentadiene with ethylacrylate has been carried out by using two types of mesoporous solid acid catalysts (Al-MCM-41, Al-MCM-48) with different pore structures. The specific topology of Al-MCM-48 (cubic Ia3d structure composed of two independent 3-D channel systems) exhibit higher activity and stereo-control than those of Al-MCM-41 (hexagonal packing of 1-D channels). The physical properties of Al-MCM-48 catalyst, such as high accessibility of reactants to the acid sites, spatial confinement in the nanoscopic reactors, and 3-D channel network structure that are effective adsorption and diffusion of reactants, play a crucial role in the present study.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.1-7
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• 1999

We developed Fabrication process of embedded passive components in MCM-D substrate. The proposed MCM-D substrate is based on Cu/photosensitive BCB multilayer. The substrate used is Si wafer and Ti/cu metallization is used to form the interconnect layer. Interconnect layers are formed with 1000$\AA$ Ti/3000$\AA$ Cu by sputtering method and 3$\mu\textrm{m}$ Cu by electrical plating method. In order to form the vias in photosensitive BCB layer, the process of BCB and plasma etch using $C_2F_6$ gas were evaluated. The MCM-D substrate is composed of 5 dielectric layers and 4 interconnect layers. Embedded resistors are made with NiCr and implemented on the $2^{nd}$ dielectric layer. The sheet resistance of NiCr is controlled to be about 21 $\Omega$/sq at the thickness of 600$\AA$. The multi-turn sprial inductors are designed in coplanar fashion on the $4^{th}$ interconnect layer with an underpass from the center to outside using the lower $3^{rd}$ interconnect layer. Capacitors are designed and realized between $1^{st}$ interconnect layer and $2^{nd}$ interconnect layer. An important issue in capacitor is the accurate determination of the dielectric thickness. We use the 900$\AA$ thickness of PECVD silicon nitride film as dielectric. Capacitance per unit area is about 88nF/$\textrm {cm}^2$at the thickness of 900$\AA$. The advantage of this integration process is the compatibility with the conventional semiconductor process due to low temperature PECVD silicon nitride process and thermal evaporation NiCr process.