• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.11
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• pp.28-34
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• 2015

By incorporating a 966nm near infrared laser, we demonstrated bidirectional current triggering of between 0 and 10mA in a two-terminal planar device based on a highly resistive vanadium dioxide ($VO_2$) thin film grown by a pulsed laser deposition method. A two-terminal planar device, which had an electrode separation of $100{\mu}m$ and a $50{\mu}m-wide$ $VO_2$ conducting layer, was fabricated through ion beam-assisted milling and photolithographic techniques. A bias voltage range for stable bidirectional current triggering was determined by investigating the current-voltage curves of the $VO_2-based$ device in a current-controlled mode. Bidirectional current triggering of up to 10mA was realized by directly illuminating the $VO_2$ film with a focused infrared laser beam, and the transient responses of triggered currents were analyzed when the laser was modulated at various pulse widths and repetition rates. A switching contrast between off- and on-state currents was evaluated as ~3571, and the rising and falling times were measured as ~40 and ~20ms, respectively.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3274-3275
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• 1999

This paper presents a new method of spacer assembly using anodic bonding method which is very simple and clean. The spacer having $100{\mu}m(W){\times}2.1{\mu}m(H)$ was bonded on amorphous silicon film of anode plate. Then, the vertical-type electrode was used for assembling of spacer in high voltage field emission display. In these results, we suggested that the vertical-type electrode provided spacer alignment for high aspect ratio and more simple batch process than conventional method.

• Journal of Korea Society of Industrial Information Systems
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• v.22 no.2
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• pp.71-78
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• 2017

In This Paper, A DC-DC Boost Converter for Portable Device has been Proposed. The Converter Which is Operated with 1 MHz High Switching Frequency is Capable of Reducing Mounting Area of Passive Devices Such as Inductor and Capacitor, Consequently is Suitable for Portable Device. This Boost Converter Consists of a Power Stage and a Control Block and a Protect Block. Proposed DC-DC Boost Converter has been Designed a 0.18 um Magnachip CMOS Process Technology, we Examined Performances of the Fabricated Chip and Compared its Measured Results with SPICE Simulation Data. Simulation Results Show that the Output Voltage is 4.8 V in 3.3 V Input Voltage, Output Current 95 mA Which is Larger than 20~50 mA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.643-650
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• 2000

Density-of-states effective mass(m*$_{d}$) and conductivity mass(m*$_{c}$)for Ge and Ge$_{0.8}$/Sn$_{0.2}$ are obtained by using 8$\times$8 k.p and strain Hamiltonians. It is shown that m*$_{d}$ and m*$_{c}$ for electrons in Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) and Ge$_{0.8}$/Sn$_{0.2}$/Ge(001) are much smaller than those for electrons in relaxed Ge mainly due to the increase of interaction caused by the strain between the conduction band and valence bands at the $\Gamma$ point. The lift of degeneracy in Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) and Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) makes m*$_{d}$ and m*$_{c}$ for holes smaller than those in relaxed Ge and results in the decrease of the interband scattering as well as interband scattering. The decrease of the interband scattering is more obvious in Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) because of its large splitting energy between the heavy hole and light hole band. Therefore, Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) is expected to be good candidate for the development of ultra high-speed CMOS device.CMOS device.eed CMOS device.CMOS device.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.1
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• pp.29-35
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• 2000

Luminescent characteristics of SrS:Cu,X TFeL devices fabricated by electron-beam deposition system were studied. The SrS powders were used as the host materials and Cu, $CuF_2,\;Cu_2S$ or CuCl powders were added as the luminescent center. The emission spectra of the SrS:Cu,X TFEL devices strongly depended on coactivators. The luminance($L_{40}$) and efficiency(${\eta}_{20}$) of SrS:$Cu_2S$ TFEL device were 1443 cd/$m^2$ and 2.44 lm/w, respectively. Green color was observed from this TFEL device. The luminous efficiency of SrS:$Cu_2S$ TFEL device was higher than that of ZnS:Tb TFEL device, and it also could be good green phosphors for TFEL devices. The luminance($L_{40}$) and efficiency(${\eta}_{20}$) of SrS:CuCl TFEL device were 262 cd/$m^2$ and 0.26 lm/w, respectively. Blue color was emitted from this TFEL device.

• Journal of the Korean Solar Energy Society
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• v.33 no.2
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• pp.93-100
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• 2013

Two-step thermochemical cycle using ferrite-oxide($Fe_2O_4$) device was investigated. The $H_2O$(g) was converted into $H_2$ in the first experiment which was performed using a dish type solar thermal system. However the experiment was lasted only for 2 cycles because the metal oxide device was sintered and broken down. Another problem was that the reaction was taken place mainly on a side of the metal oxide device. The m-$ZrO_2$, which was widely known as a material preventing sintering, was applied on the metal oxide device. The ferrite loading rate and the thickness of the metal oxide device were increased from 10.67wt% to 20wt% and from 10mm to 15mm, respectively. The chemical reactor having two inlets was designed in order to supply the reactants uniformly to the metal oxide device. The second-experiment was lasted for 5 cycles, which was for 6 hours. The total amount of the $H_2$ production was 861.30ml. And cerium oxide($CeO_2$) device was used for increasing $H_2$ production rate. $CeO_2$ device had low thermal resistance, however, more $H_2$ production rate than $Fe_2O_4$ device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.124-127
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• 2010

We have fabricated organic white light emitting device by two colors from yellow fluorescence material (5,6,11,12)-Tetraphenylnaphthacene(Rubrene) and blue phosphorescent material (iridum-bis(4,6-difluorophenylpyridinato-N,C2)-picolinate(FIrpic). The threshold voltage is 5.3 V, and the brightness reaches 1000 cd/$m^2$ at 11 V, 14.5 mA/$m^2$. The color of the light corresponds to a CIE coordinate of (0.30, 0.38). The highest efficiency of the device can reach 9.5 cd/A or 5.5 lm/W at 6 V, 0.1 mA/$m^2$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.5B
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• pp.511-516
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• 2011

In this paper, we present the AMI System mentioned as one of the main application areas in the M2M. To enable the AMI, it is essentially required to install, deploy and manage all the devices. Especially, Device Management technology is considered to be suitable for these AMI due to its advantages like, easy installation, remote FW/SW upgradeability. We investigate the fundamental operation of the DM and the design of the DM in the AMI is presented.

• Journal of Electrical Engineering and information Science
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• v.2 no.4
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• pp.106-110
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• 1997

A new SOI NMOSFET with a 'LOCOS-like' shape self-aligned polysilicon gate formed on the recessed channel region has been fabricated by a mix-and-match technology. For the first time, a new scheme for implementing self-alignment in both source/drain and gate structure in recessed channel device fabrication was tried. Symmetric source/drain doping profile was obtained and highly symmetric electrical characteristics were observed. Drain current measured from 0.3${\mu}{\textrm}{m}$ SOI devices with V\ulcorner of 0.77V and Tox=7.6nm is 360$mutextrm{A}$/${\mu}{\textrm}{m}$ at V\ulcorner\ulcorner=3.5V and V\ulcorner=2.5V. Improved breakdown characteristics were obtained and the BV\ulcorner\ulcorner\ulcorner(the drain voltage for 1 nA/${\mu}{\textrm}{m}$ of I\ulcorner at V=\ulcorner\ulcorner=0V) of the device with L\ulcorner\ulcorner=0.3${\mu}{\textrm}{m}$ under the floating body condition was as high as 3.7 V. Problems for the new scheme are also addressed and more advanced device structure based on the proposed scheme is proposed to solve the problems.

• Journal of the Semiconductor & Display Technology
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• v.14 no.2
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• pp.67-72
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• 2015

For the development of UFS device test system, M-PHY specifications should be matched with MIPI-standard which is analog signal protocol. In this paper, the implementation methodology and hardware structure for the M-PHY AFE (Analog Front End) Block was suggested that it can be implemented using universal components without ASIC process. The testing procedure has a jitter problem so to solve the problems we using ASIC process, normally but the ASIC process needs a lot of developing cost making the UFS device test system. In is paper, the suggestion was verified by the output signal which was compared to the MIPI-standard on the Prototype-board using universal components. The board was reduced the jitter on the condition of HS-TX and 5.824 Gbps Mode in SerDes (Serialize-deserializer). Finally, the suggestion and developed AFE block have a useful better than ASIC process on developing costs of the industrial UFS device test system.