Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)
- Volume 13 Issue 8
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- Pages.643-650
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- 2000
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- 1226-7945(pISSN)
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- 2288-3258(eISSN)
The density-of-states effective mass and conductivity effective mass of electrons and holes in relaxed or strained Ge and ${Ge_{0.8}}{Sn_{0.2}}$
완화된 또는 응력변형을 겪는 Ge과 ${Ge_{0.8}}{Sn_{0.2}}$ 에서 전자와 정공의 상태밀도 유효질량과 전도도 유효질량
Abstract
Density-of-states effective mass(m*
Keywords