• Journal of KIISE:Computer Systems and Theory
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• v.34 no.3
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• pp.113-123
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• 2007

This paper presents a high-performance elliptic curve cryptographic processor over $GF(2^m)$. The proposed design adopts Lopez-Dahab Montgomery algorithm for elliptic curve point multiplication and uses Gaussian normal basis for $GF(2^m)$ field arithmetic operations. We select m=163 which is the smallest value among five recommended $GF(2^m)$ field sizes by NIST and it is Gaussian normal basis of type 4. The proposed elliptic curve cryptographic processor consists of host interface, data memory, instruction memory, and control. We implement the proposed design using Xilinx XCV2000E FPGA device. Based on the FPGA implementation results, we can see that our design is 2.6 times faster and requires significantly less hardware resources compared with the previously proposed best hardware implementation.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.21-25
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• 2017

In this study, we have fabricated Schottky barrier diodes (SBD) on single-crystal ${\beta}-Ga_2O_3$ semiconductor that has received much attention for use in next-generation power devices. The SBD had a Pt/Ti/Au Schottky contact on a $2{\mu}m$ Sn-doped low concentration N-type epitaxial layer. The fabricated device exhibited a breakdown voltage of > 180 V, a specific on-resistance of $1.26m{\Omega}{\cdot}cm^2$, and forward current densities of $77A/cm^2$ at 1 V and $473A/cm^2$ at 1.5 V, which proved the potential for use in power device fabrication.

• Journal of Information Display
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• v.9 no.3
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• pp.16-22
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• 2008

A novel class of conjugated dendritic molecules bearing N-hexyl-substituted carbazoles as peripheral groups and various conjugative aromatic cores was synthesized through Heck coupling and the Horner-Emmons reaction. A multilayered structure of ITO/PEDOT:PSS (30 nm)/emitting material (50 nm)/BCP (10 nm)/$Alq_3$ (10 nm)/LiF (1 nm)/Al (100 nm) was employed to evaluate the synthesized dendritic materials. The electroluminescence spectrum of the multilayered device made of 3Cz predominantly exhibited blue emissions. Similar emissions were observed in the PL spectra of it's the device's thin film. The multilayered devices made of 3Cz, 3BCz, and 4BCz showed luminance values of 6,250 cd $m^{-2}$ at 24 V, 3,000 cd $m^{-2}$ at 25 V, and 1,970 cd $m^{-2}$ at 36 V, respectively. The smallest molecule, 3Cz, which bore three carbazole peripheral groups, exhibited a blue-like emission with CIE 1931 chromaticity coordinates of x = 0.17 and y = 0.21.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.59-69
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• 2002

A semi-analytical model based on exact numerical analysis of the 2DEG channel in pseudo-morphic HEMT (PMHEMT) is presented. The exactness of the model stems from solving both Schrodinger's wave equation and Poisson's equation simultaneously and self-consistently. The analytical modeling of the device terminal characteristics in relation to the charge control model has allowed a best fit with the geometrical and structural parameters of the device. The numerically obtained data for the charge control of the channel are best fitted to analytical expressions which render the problem analytical. The obtained good agreement between experimental and modeled current/voltage characteristics and small signal parameters has confirmed the validity of the model over a wide range of biasing voltages. The model has been used to compare both the performance and characteristics of a PMHEMT with a competetive HEMT. The comparison between the two devices has been made in terms of 2DEG density, transfer characteristics, transconductance, gate capacitance and unity current gain cut-off frequency. The results show that PMHEMT outperforms the conventional HEMT in all considered parameters.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1522-1523
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• 2007

MEMS(Micro Electro Mechanical Systems)기술과 니켈 전기도금 공정을 이용하여 수십 내지 수백개의 탐침소자를 갖는 프르브디바이스(probe device)를 제작하였다. 사용된 기판은 $4000{\AA}$의 oxide가 있는 p-type 실리콘 웨이퍼로서, 기판위에 NiCr과 Au를 증착한 후 PR 패터닝을 통하여 니켈을 전기도금법으로 도금하고 니켈 도금층을 제외한 부분의 NiCr과 Au를 식각함으로서 전류가 흐르는 라인(line)배선과 탐침소자가 세워질 라인을 형성하였다. 그 후 후막의 PR을 코팅하고 탐침소자가 세워질 부분을 패터닝 한 후 전기도금법을 이용하여 니켈 탐침소자를 제작하였다. 제작된 탐침소자 하나의 크기는 $60{\mu}m$의 폭과 $70{\mu}m$의 높이를 보이며, 탐침소자 전체의 크기는 $250{\mu}m$이고 탐침소자와 탐침소자 사이의 간격은 $50{\mu}m$로 제작되었다. 본 연구에서 제작된 탐침소자의 수는 25*2line으로서 총 50개 이지만 이러한 공정방식을 이용하고 탐침소자의 크기를 작게 제작한다면 하나의 프르브 디바이스에 수백 내지수천 개의 탐침소자를 제작할 수 있을 것이다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.192-198
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• 2017

In this paper, we propose a novel double gate vertical channel tunneling field effect transistor (DVTFET) with a dielectric sidewall and optimization characteristics. The dielectric sidewall is applied to the gate region to reduced ambipolar voltage ($V_{amb}$) and double gate structure is applied to improve on-current ($I_{ON}$) and subthreshold swing (SS). We discussed the fin width ($W_S$), body doping concentration, sidewall width ($W_{side}$), drain and gate underlap distance ($X_d$), source doping distance ($X_S$) and pocket doping length ($X_P$) of DVTFET. Each of device performance is investigated with various device parameter variations. To maximize device performance, we apply the optimum values obtained in the above discussion of a optimization simulation. The optimum results are steep SS of 32.6 mV/dec, high $I_{ON}$ of $1.2{\times}10^{-3}A/{\mu}m$ and low $V_{amb}$ of -2.0 V.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.7
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• pp.53-59
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• 2005

In this paper, we proposed the 2-dimensional inspection algorithm for micro-BGA(Ball Grid Array) device using a vision system. The reposed method uses the subpixel algorithm for high precision. The proposed algorithm preferentially extracts the package area of device in the input image. After the extraction of package area, each ball areas are extracted by ball search window method. The parameters for inspection are calculated for the extracted ball area. In the simulation results, we have the average error within 17[${\mu}m$].

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3711-3717
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• 2010

Four orange-red phosphorescent Ir(III) complexes were designed and synthesized based on the benzoylphenylpyridine ligand with a fluorine substituent. Multilayered OLEDs with the device structure, ITO/2-TNATA/NPB/CBP : 8% Ir(III) complexes/BCP/Liq/Al, were fabricated using these complexes as dopant materials. All the devices exhibited orange-red electroluminescence and their electroluminescent properties were quite sensitive to the structural features of the dopants in the emitting layers. Among these, the maximum luminance ($14700\;cd/m^2$ at 14.0 V) was observed in the device containing Ir(III) complex 1 as the dopant. In addition, its luminous, power and quantum efficiency were 11.7 cd/A, 3.88 lm/W and 9.58% at $20\;mA/cm^2$, respectively. The peak wavelength of electroluminescence was 606 nm with CIE coordinates of (0.61, 0.38) at 12.0 V. The device also showed stable color chromaticity with various voltages.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.1A
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• pp.47-53
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• 2003

This paper describes the design of a 155 Mb/s multiplexer-demultiplexer chip. This device for a 2.5 Gb/s SDH based transmission system is to interleave the parallel data of 51 Mb/s into 155 Mb/s serial data output, and is to deinterleave a serial input bit stream of 155 Mb/s into the parallel output of 51 Mb/s The input and output of the device are TTL compatible at the low-speed end, but 100K ECL compatible at the high-speed end The device has been fabricated with a 0.7${\mu}m$ BiCMOS gate array The fabricated chip shows the typical phase margin of 180 degrees and output data skew less than 470 ps at the high-speed end. And power dissipation is evaluated under 2.0W.

• Korean Journal of Soil Science and Fertilizer
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• v.47 no.6
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• pp.425-431
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• 2014

Most fields in highland areas are covered with rye or hairy vetch for conservation during a fallow. However, using cover crops needs an effort to sow, and this makes top soil more vulnerable to loss due to surface disturbances. The aims of this study were to develop an automatic seeding-regulator device using a low-price, extensive-use GPS sensors and a DC motors and to evaluate a working efficiency of it after adaptation to partial tillage machine for reducing seeding effort. The amount of runoff water and soil loss was evaluated with partial tillage and simultaneous-seeding after harvesting soybean, in 17% slope lysimeters. In results, the seeding amount with the machine speed was stable between $0.5{\sim}0.8m\;s^{-1}$ of working sections. The automatic control device of seeding-rate could be enough to solve the slip problems of power selecting supply system or five four-wheel drive device. In partial tillage and simultaneous seeding, runoff water was 11.6% ($1.8m^3ha^{-1}$) of the scatter-seeding control ($15.5m^3ha^{-1}$) and soil loss was 13.2% ($7kg\;ha^{-1}$) of the scatter-seeding control ($53kg\;ha^{-1}$). These results suggest that partial tillage and simultaneous-seeding methods are very effective in decreasing work effort and soil loss of sloped land.