• 제목/요약/키워드: M.I.V

검색결과 2,505건 처리시간 0.032초

POSITIVE SOLUTION FOR A CLASS OF NONLOCAL ELLIPTIC SYSTEM WITH MULTIPLE PARAMETERS AND SINGULAR WEIGHTS

  • AFROUZI, G.A.;ZAHMATKESH, H.
    • Journal of applied mathematics & informatics
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    • 제35권1_2호
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    • pp.121-130
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    • 2017
  • This study is concerned with the existence of positive solution for the following nonlinear elliptic system $$\{-M_1(\int_{\Omega}{\mid}x{\mid}^{-ap}{\mid}{\nabla}u{\mid}^pdx)div({\mid}x{\mid}^{-ap}{\mid}{\nabla}u{\mid}^{p-2}{\nabla}u)\\{\hfill{120}}={\mid}x{\mid}^{-(a+1)p+c_1}\({\alpha}_1A_1(x)f(v)+{\beta}_1B_1(x)h(u)\),\;x{\in}{\Omega},\\-M_2(\int_{\Omega}{\mid}x{\mid}^{-bq}{\mid}{\nabla}v{\mid}^qdx)div({\mid}x{\mid}^{-bq}{\mid}{\nabla}v{\mid}^{q-2}{\nabla}v)\\{\hfill{120}}={\mid}x{\mid}^{-(b+1)q+c_2}\({\alpha}_2A_2(x)g(u)+{\beta}_2B_2(x)k(v)\),\;x{\in}{\Omega},\\{u=v=0,\;x{\in}{\partial}{\Omega},$$ where ${\Omega}$ is a bounded smooth domain of ${\mathbb{R}}^N$ with $0{\in}{\Omega}$, 1 < p, q < N, $0{\leq}a$ < $\frac{N-p}{p}$, $0{\leq}b$ < $\frac{N-q}{q}$ and ${\alpha}_i,{\beta}_i,c_i$ are positive parameters. Here $M_i,A_i,B_i,f,g,h,k$ are continuous functions and we discuss the existence of positive solution when they satisfy certain additional conditions. Our approach is based on the sub and super solutions method.

DISCOVERY OF WHITE DWARFS IN THE GLOBULAR CLUSTERS M13 AND M22 USING HST ACS PHOTOMETRIC DATA

  • CHO, DONG-HWAN;YOON, TAE SEOG;LEE, SANG-GAK;Sung, HYUN-IL
    • 천문학회지
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    • 제48권6호
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    • pp.333-341
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    • 2015
  • A search for hot and bright white dwarfs (WDs) in the Milky Way globular clusters M13 (NGC 6205) and M22 (NGC 6656) is carried out using the deep and homogeneous V I photometric catalog of Anderson et al. and and Sarajedini et al., based on data taken with the ACS/WFC aboard the Hubble Space Telescope (HST). V versus V − I color-magnitude diagrams (CMDs) of M13 and M22 are constructed and numerous spurious detections are rejected according to their photometric quality parameters qfit(V ) and qfit(I). In the case of M13, further radial restriction is applied to reject central stars with higher photometric errors due to central crowding. From each resultant V versus V −I CMD, sixteen and thirteen WD candidates are identified in M13 and M22, respectively. They are identified as stellar objects in the accompanying ACS/WFC images and are found to be randomly distributed across the central regions of M13 and M22. Their positions in the CMDs are in the bright part of the DA WD cooling sequences indicating that they are true WDs. In order to confirm their nature, follow-up spectroscopic observations are needed.

Short channel SNOSFET EEPROM의 제작과 특성에 관한 연구 (A study on fabrecation and characteristics of short channel SNOSFET EEPROM)

  • 강창수;김동진;서광열
    • E2M - 전기 전자와 첨단 소재
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    • 제6권4호
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    • pp.330-338
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    • 1993
  • Channel의 폭과 길이가 15 x 15.mu.m, 15 x 1.5.mu.m, 1.9 x 1.7.mu.m인 비휘발성 SNOSFET EEPROM 기억소자를 CMOS 1 Mbit 설계규칙에 의하여 제작하고 체널크기에 따른 $I_{D}$- $V_{G}$특성 및 스위칭 특성을 조사하여 비교하였다. 게아트에 전압을 인가하여 질화막에 전하를 주입시키거나 소거시킨 후 특성을 측정한 결과, 드레인전류가 적게 흐르는 저전도상태와 전류가 많이 흐르는 고전도상태로 되는 것을 확인하였다. 15 x 15.mu.m의 소자는 전형적인 long channel특성을 나타냈으며 15 x 1.5.mu.m, 1.9 x 1.7.mu.m는 short channel특성을 보였다. $I_{D}$- $V_{G}$ 특성에서 소자들의 임계 문턱전압은 저전도상태에서 $V_{W}$=+34V, $t_{W}$=50sec의 전압에서 나타났으며 메모리 윈도우 폭은 15 x 15.mu.m, 15 x 1.5.mu.m, 1.9 x 1.7.mu.m의 소자에서 각각 6.4V, 7.4V, 3.5V였다. 스위칭 특성조사에서 소자들은 모두 논리스윙에 필요한 3.5V 메모리 윈도우를 얻을 수 있었으며 논리회로설계에 적절한 정논리 전도특성을 가졌다.특성을 가졌다.다.다.

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CsI(T1) 방사선센서의 제작 및 분광특성 연구 (A Study on the Fabrication of CsI(T1) Radiation Sensor and its Spectroscopic Characteristics)

  • 권수일;신동호
    • 한국의학물리학회지:의학물리
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    • 제13권1호
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    • pp.44-50
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    • 2002
  • 실험실에서 성장시킨 CsI(T1)섬광체를 이용하여 검출기를 설계 제작하고 분광 및 출력특성을 조사하여 핵분광과 진단방사선센서로서의 응용가능성을 타진해 보았다. CsI(T1)단결정은 수직 Bridgman성장장치를 이용하여 지름 11mm, 몰농도 0.001mo1%로 성장시키었다. 이 단결정을 광다이오드를 이용하여 방사선 센서로 제작한 후, $^{22}$ Na, /up 137/Cs, $^{30}$ Co 표준감마선원에 대한 에너지 분해능을 각각 측정하였으며 진단 X선 영역에 대한 출력특성도 측정하였다. $^{22}$ Na의 0.511 MeV 의 경우13.2%, $^{137}$Cs의 0.662 MeV의 경우 8.3%, 그리고 $^{60}$Co의 1.17 MeV와 1.332 MeV에 대해서는 각각 6.7%와 5.1%의 에너지 분해능을 얻었다. 또한 관전압 60kVp, 80kVp, 100kVp, 120kVp 에 대하여 5mAs부터 80mAs 까지 진단 X선영역에 대한 출력 선형성을 확인하였다.

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탄화규소(4H) 기판의 초고내압용 접합 장벽 쇼트키 다이오드의 특성 모델링 (Characteristics Modeling of Junction Barrier Schottky Diodes for ultra high breakdown voltage with 4H-SiC substrate)

  • 송재열;방욱;강인호;이용재
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2007년도 추계종합학술대회
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    • pp.200-203
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    • 2007
  • 넓은 에너지 갭의 물질인 탄화규소(4H)기판을 사용하여, 초고내압을 위한 접합장벽 쇼트키 구조의 소자를 설계하여 제작하였다. 측정결과로써 소자의 역방향 I-V 특성은 1000V 이상의 항복전압을 보였고 p-grid의 설계 최적 길이는 $3{\mu}m$ 간격이였다. 이 연구에서는 제작한 소자의 공정 조건 파라미터들을 사용하여 I-V 특성을 모델링 하였고 I-V 특성 파라미터들을 추출하여 실제 소자 파라미터와 비교, 분석하였다.

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A HOMOLOGICAL CHARACTERIZATION OF PRÜFER v-MULTIPLICATION RINGS

  • Zhang, Xiaolei
    • 대한수학회보
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    • 제59권1호
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    • pp.213-226
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    • 2022
  • Let R be a ring and M an R-module. Then M is said to be regular w-flat provided that the natural homomorphism I ⊗R M → R ⊗R M is a w-monomorphism for any regular ideal I. We distinguish regular w-flat modules from regular flat modules and w-flat modules by idealization constructions. Then we give some characterizations of total quotient rings and Prüfer v-multiplication rings (PvMRs for short) utilizing the homological properties of regular w-flat modules.

Hard TiN Coating by Magnetron-ICP P $I^3$D

  • Nikiforov, S.A.;Kim, G.H.;Rim, G.H.;Urm, K.W.;Lee, S.H.
    • 한국표면공학회지
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    • 제34권5호
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    • pp.414-420
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    • 2001
  • A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

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STM을 이용한 Dipyridinium 유기 단분자막의 모폴로지 관찰 및 전기적 특성 연구 (Study on the Mophology Observation and Electrical Properties of Dipyridinium Organic Monolayer Using STM)

  • 이남석;신훈규;권영수
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권2호
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    • pp.51-54
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    • 2005
  • In this work, the attempt has been made to investigate the morphology of self-assembled dipyridinium dithioacetate on Au(111) substrate by Scanning Tunneling Microscopy(STM). Also, we measured electrical properties(I-V) using Scanning Tunneling Spectroscopy(STS). Sample used in this experiment is dipyridinium dithioacetate, which contains thiol functional group, this structure that can be self-assembled easily to Au(111) substrate. The self-assembly procedure was used for two different concentrations, 0.5 mM/ml and 1 mM/ml. Dilute density of sample by 0.5 mM/ml, 1 mM/ml and observed dipyridinium dithioacetate's image by STM after self-assembled on Au(111) substrate. The structure of STM tip-SAMs-Au(111) substrate has been used measurement for electrical properties(I-V) using STS. The current-voltage(I-V) measurement result, observed negative differential resistance(NDR) properties.

RANDOMLY ORTHOGONAL FACTORIZATIONS OF (0,mf - (m - 1)r)-GRAPHS

  • Zhou, Sizhong;Zong, Minggang
    • 대한수학회지
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    • 제45권6호
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    • pp.1613-1622
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    • 2008
  • Let G be a graph with vertex set V(G) and edge set E(G), and let g, f be two nonnegative integer-valued functions defined on V(G) such that $g(x)\;{\leq}\;f(x)$ for every vertex x of V(G). We use $d_G(x)$ to denote the degree of a vertex x of G. A (g, f)-factor of G is a spanning subgraph F of G such that $g(x)\;{\leq}\;d_F(x)\;{\leq}\;f(x)$ for every vertex x of V(F). In particular, G is called a (g, f)-graph if G itself is a (g, f)-factor. A (g, f)-factorization of G is a partition of E(G) into edge-disjoint (g, f)-factors. Let F = {$F_1$, $F_2$, ..., $F_m$} be a factorization of G and H be a subgraph of G with mr edges. If $F_i$, $1\;{\leq}\;i\;{\leq}\;m$, has exactly r edges in common with H, we say that F is r-orthogonal to H. If for any partition {$A_1$, $A_2$, ..., $A_m$} of E(H) with $|A_i|=r$ there is a (g, f)-factorization F = {$F_1$, $F_2$, ..., $F_m$} of G such that $A_i\;{\subseteq}E(F_i)$, $1\;{\leq}\;i\;{\leq}\;m$, then we say that G has (g, f)-factorizations randomly r-orthogonal to H. In this paper it is proved that every (0, mf - (m - 1)r)-graph has (0, f)-factorizations randomly r-orthogonal to any given subgraph with mr edges if $f(x)\;{\geq}\;3r\;-\;1$ for any $x\;{\in}\;V(G)$.

흰쥐의 뮤시몰투여에 의한 배뇨반사억제효과에 대한 벤조디아제핀수용체의 영향 (Central Involvement of Benzodiazepine Receptor on the Muscimol-induced Inhibition of Micturition Reflex in Rats)

  • 허인회;오호정
    • 약학회지
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    • 제36권5호
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    • pp.496-505
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    • 1992
  • The correlation between GABA receptors($GABA_A$ and $GABA_B$ receptor) and benzodiazepine receptor on the saline infusion-induced micturition reflex contraction was studied in the female rat. To investigate the effect of ${\gamma}-aminobutyric$ acid(GABA) on the micturition reflex, exogenous GABA(10 mg/kg) and GABA transaminase inhibitor(aminooxyacetic acid; AOAA $1\;{\mu}g$) were administered intravenously(i.v.) and intracerebroventriculary(i.c.v.), respectively. In result, both GABA and AOAA inhibited the saline induced micturition reflex contraction. This AOAA induced inhibition of micturition reflex was blocked by both bicuculine. $GABA_A$ receptor antagonist, and Ro 15-1788, benzodiazepine receptor antagonist. Muscimol, $GABA_A$ receptor antagonist($0.1\;{\mu}g$ i.c.v., $3\;{\mu}g$ intrathecal; i.t., 1 mg/kg i.v.) and baclofen, $GABA_A$ receptor agonist($1\;{\mu}g$ i.c.v., $3\;{\mu}g$ i.t., 1 mg/kg i.v.) also inhibited the bladder contraction. Pretreatment of bicuculline($1\;{\mu}g$ i.c.v.), but not of 5-aminovaleric acid(AVA, $1\;{\mu}g$ i.c.v.), $GABA_B$ receptor antagonist blocked the central inhibition of muscimol. These inhibitory effects were reversed by Ro15-1788 but were potentiated by flurazepam, benzodiazepine receptor antagonist. On the other hand, the inhibitory effects of baclofen were not affected by Ro 15-1788. Diazepam and flurazepam also inhibited the micturition reflex contraction when they were administered $3\;{\mu}g$ i.c.v., $10\;{\mu}g$ i.t., $10\;{\mu}M$, $30\;{\mu}M$ transurethrally, respectively. In conclusion, these results suggest that the micturition reflex is mediated by $GABA_A$, $GABA_B$ receptor and benzodiazepine receptor. The bezodiazepines increase the receptor binding of GABA to the $GABA_A$ receptor, so that the benzodiiazepines show the synergistic effect on the inhibition of the micturition reflex contraction, but not to the $GABA_B$ receptor.

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