• Journal of the Korean Ceramic Society
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• v.42 no.1
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• pp.33-36
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• 2005

Effect of heating rate was studied on consolidation of the low-temperature-sinterable PMN-PT-BT powder by varying the heating rate from 5, 10, to $20^{circ}C/min$. Slow rate of $5^{circ}C/min$ showed more homogeneous microstructure than high rate of 10 or $20^{circ}C/min$ due to low PbO (m.p. $886^{circ}C$) evaporation at 850^{circ}C$. It showed sintered density of $7.93 g/cm^{3}$, room temperature dielectric constant of 15300, and dissipation factor of $0.92\%$.

• Proceedings of the Korean Ceranic Society Conference
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• 2004.04b
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• pp.32.4-32.4
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• 2004

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.661-667
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• 1990

Spinel powders were synthesized at the comparatively low-temperature range(800~90$0^{\circ}C$) by the emulsion-hot kerosene drying method and the effects of kerosene-evaporative conditions on powder characteristics were investigated. In emulsion drying, more unagglomerated and sinterable powders could be synthesized through rapid evaporation of emulsion at the higher kerosene temperature. The completion of formation reaction of spinel observed at the low-temperature range confirmed the high reactivity of powders. The relative theoretical density and the fracture toughness of spinel pellets sintered at 1$650^{\circ}C$ for 4hrs. were 98% and 2.1MN/m3/2, respectively.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1350-1355
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• 1999

Sintering characteristics and dielectric properties of low temperature sinterable Glass/Ceramic dielectric materials were investigated. The dielectric materials which were developed for microwave frequency applications consist of SiO2-TiO2-Bi2O3-RO system(RO:BaO-CaO-SrO) crystallizable glass and Al2O3 as a ceramic filler. Sintering experiments showed that no more densification occurred above 80$0^{\circ}C$ and bulk density and shrinkage depended on Al2O3 content only. Results of dielectric measurements showed that $\varepsilon$r Q$\times$f and $\tau$f of the material containing 30wt% Al2O3 were 17.3, 600 and +23 ppm respectively. Those values for 45 and 60wt% Al2O3 samples were 11.6, 1400, +0.7 ppm and 7.2, 2000, -8.5 ppm, repectively. The results clearly showed that the Glas/Ceramic materials of present experiment decreased in $\varepsilon$r and increased in $\times$f value and changed from positive to negative value in $\tau$f value with the increasement of Al2O3 content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.646-649
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• 2002

The microwave dielectric properties and the structure of $Sb_2O_5$ modified $BiNb_xSb_{1-x}O_4$ ceramics were investigated. The structure of these ceramics were orthohombic phase at all sintering temperatures and there were not the second phase. These ceramics added sintering additive such as CuO and $V_2O_5$ were sinterable at a low temperature$(880^{\circ}C{\sim}960^{\circ}C)$ by liquid phase. Dielectric properties of $BiNb_xSb_{1-x}O_4$ ceramics were also improved than these of $BiNbO_4$ ceramics. The content of modified atom controlled the microstructure, dielectric constant and quality factor. As a result, We could obtain following result; ${\varepsilon}r$=42~44, $Q{\cdot}f_0$=20,000~42,000GHz, $\tau_f=-7{\sim}-28ppm/^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.345-348
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• 2006

The piezoelectric thick films were fabricated on silicon substrates by screen printing method. By developing a low-temperature sinterable piezoelectric composition and a new poling technique, we fabricated the high-performance piezoelectric thick films on silicon which can be applied for piezoelectric MEMS applications such as micropumps of the ink jet printer heads.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.904-911
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• 2001

High-density lead zirconate titanate(Pb(Zr$\_$0.53/Ti$\_$0.47/)O$_3$, PZT) ceramics were fabricated by a new milling-precipitation(MP) process improved from the conventional solid state process. This process was progressed by a milling impregnation through mixing ZrO$_2$ and TiO$_2$ powders with lead nitrate(Pb(NO$_3$)$_2$) water solution in zirconia ball media, and then milling precipitation was induced from precipitation of PbC$_2$O$_4$ by adding ammonium of oxalate monohydrate((NH$_4$)$_2$C$_2$O$_4$$.$H$_2$O) as a precipitant. As a result of this process, single-phase perovskite structure was formed at the calcination temperature of 750$\^{C}$ for Pb(Zr$\_$0.53/Ti$\_$0.47/)O$_3$ powders. In addition, the highest density at the sintering temperature of 1100$\^{C}$ was obtained, because of the highly sinterable PZT Powders ground through the re-milling process. Piezoelectric and dielectric properties of sintered sample were improved by MP process.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.20-23
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• 2003

Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.3
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• pp.37-43
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• 1999

Co-firing incompatibility between the low temperature sinterable Glass/ceramic and Ag-thick film was studied. The dielectric material, which has been developed for microwave frequency applications, consists of $SiO_2-TiO_2-Bi_2O_3$-$Bi_2O_3$-RO system(RO:BaO -CaO-SrO) crystallizable glass and $Al_2O_3$as a ceramic filler. The large camber in the sintered specimen and cracks at the Ag-film under the influence of the camber occurred due to the difference of densification rate between the ceramic sheet and the Ag-film $B_2O_3$addition to the Glass/ceramic mixture reduced the severe camber. The cambers decreased with increasing the $B_2O_3$ content, and completely disappeared with 14 vol% $B_2O_3$addition. With additions of $B_2O_3$, $\varepsilon_{r}$ decreased abruptly, Q$\times$f value increased largely and the $\tau_f$ value of the material quickly shifted to positive one.

• Journal of the Korean Ceramic Society
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• v.39 no.11
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• pp.1074-1082
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• 2002

Nanocomposite PMN-PT-BT/Ag/MgO was prepared by sintering at $950{\circ}C$ with addition of $AgNO_3$ and MgO sol to the PMN-PT-BT powder sinterable at $1200{\circ}C$. The low-temperature-sinterable PMN-PT-BT/Ag powder prepared by the modified mixed oxide method was calcined at $600{\circ}C$ for 1h and surface modified with the MgO sol of 0-10 wt% and then subjected to consolidation at $850-950{\circ}C$ for 4h under a flowing oxygen. The nanocomposite PMN-PT-BT/Ag/MgO(0.5wt%) sintered at $950{\circ}C$ showed the microstructure with grains of $1-3{\mu}m$, the second phase of MgO of $0.1-0.3{\mu}m$ by SEM and Ag of << $1{\mu}m$ qualitatively by SIMS. It showed the sintered relative density of 99%, the room temperature dielectric constant of 17200, the dielectric loss of 2.1% and the specific resistivity of $5.46{\times}10^{12}{\Omega}{\cdot}cm$. But the PMN-PT-BT/Ag/MgO(0 wt%) nanocomposite sintered at $950{\circ}C$ showed a little better properties : the sintered relative density of 99.5%, the room temperature dielectric constant of 19500, the dielectric loss of 2.1% and the specific resistivity of $7.30{\times}10^{12}{\Omega}{\cdot}cm$.