• Corrosion Science and Technology
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• v.22 no.5
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• pp.368-376
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• 2023

Dental Ni-Ti files must ensure stability and resistance to fatigue fracture. DLC and ta-C were coated to remove defects on the surface and ensure stability, and the surface characteristics were investigated. When coated with DLC, it was black, and in case of ta-C coating, it was blue-black. Scratches, which are defects caused by mechanical processing, were formed on the surface of the un-coated Ni-Ti file from the end of the file along the direction of processing, with the Pro-file appearing in the vertical direction and the K-file appearing in the file direction. Scratches were reduced on the coated surface, and the surface roughness was greatly reduced after coating compared to before coating. The un-coated Ni-Ti file had the lowest hardness, the DLC-coated file had the highest hardness, and ta-C showed relatively high hardness. The elastic modulus of the DLC coating film was high, and the ta-C elastic modulus was low. The adhesion of the DLC coating film tended to be higher than that of ta-C, and the wear loss amount of DLC coating of taC was lower. The corrosion potential of the ta-C coating increased significantly, and the corrosion current density decreased.

• Journal of Surface Science and Engineering
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• v.28 no.5
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• pp.267-275
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• 1995

Electron beam can provide convenient way to heat the substrate during Hollow Cathode Discharge (HCD) ion plating of Ti(C, N)films. Densification of columnar structrue is enhanced by longer duration of electron beam heating(EBH). While strong(111) texture is identified always to be formed, the amount of (200) oriented grains which coherently interfaced with carbide particles of the substrate increased with heating(EBH). In turns, these crystallogaphical change lead to the increase of micro hardness and adhesion of coating. Adhesion of Ti(C, N) films increased more dramatically in case of ASP30 substrate of which carbide particles dispersed more finely than M42. Therefore, it could be concluded that both the density of film and interfacial structure can affect the adhesion property. Overheating of substrate could be resulted in low adhesion resistance due to high residual stress developed in the film.

• Journal of Integrative Natural Science
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• v.7 no.1
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• pp.1-4
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• 2014

Distributed Bragg reflector porous silicon of different characteristics were formed to determine their optical constants in the visible wavelength range using a periodic square wave current between low and high current densities. The surface and cross-sectional SEM images of distributed Bragg reflector porous silicon were obtained using a cold field emission scanning electron microscope. The surface image of distributed Bragg reflector porous silicon indicates that the distributions of pores are even. The cross-sectional image illustrates that the multilayer of distributed Bragg reflector porous silicon exhibits a depth of few microns and applying of square current density during the etching process results two distinct refractive indices in the contrast. Distributed Bragg reflector porous silicon exhibited a porosity depth profile that related directly to the current-time profile used in etch. Its free-standing film was obtained by applying an electro-polishing current.

• Korean Journal of Materials Research
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• v.20 no.9
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• pp.463-466
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• 2010

We studied the initial reaction mechanism of Zn precursors, namely, di-methylzinc ($Zn(CH_3)_2$, DMZ) and diethylzinc ($Zn(C_2H_5)_2$, DEZ), for zinc oxide thin-film growth on a Si (001) surface using density functional theory. We calculated the migration and reaction energy barriers for DMZ and DEZ on a fully hydroxylized Si (001) surface. The Zn atom of DMZ or DEZ was adsorbed on an O atom of a hydroxyl (-OH) due to the lone pair electrons of the O atom on the Si (001) surface. The adsorbed DMZ or DEZ migrated to all available surface sites, and rotated on the O atom with low energy barriers in the range of 0.00-0.13 eV. We considered the DMZ or DEZ reaction at all available surface sites. The rotated and migrated DMZs reacted with the nearest -OH to produce a uni-methylzinc ($-ZnCH_3$, UMZ) group and methane ($CH_4$) with energy barriers in the range of 0.53-0.78 eV. In the case of the DEZs, smaller energy barriers in the range of 0.21-0.35 eV were needed for its reaction to produce a uni-ethylzinc ($-ZnC_2H_5$, UEZ) group and ethane ($C_2H_6$). Therefore, DEZ is preferred to DMZ due to its lower energy barrier for the surface reaction.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.541-541
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• 2012

InP quantum dots capped by myristic acid (InP-MA QDs) were synthesized by a typical hot injection method using MA as stablizing agent. The current density across the InP-MA QDs thin film which was fabricated by spin-coating method is about $10^{-4}A/cm^2$ at the electric field of 0.1 MV/cm from I-V measurement on a metal-insulator-metal (MIM) device. The low conductivity of the InP-MA QDs thin film is interpreted as due to the long interdistances among the dots governed by the MA molecules. Therefore, replacing the MA with thioacetic acid (TAA) by biphasic ligand exchange was conducted in order to obtain TAA capped InP QDs (InP-TAA). InP-TAA QDs were designed due to: 1) the TAA is very short molecule; 2) the thiolate groups on the surface of the InP-TAA QDs are expected to undergo condensation reaction upon thermal annealing which connects the QDs within the QD thin film through a very short linker -S-; and 3) TAA provides better passivation to the QDs both in the solution and thin film states which minimizing the effect of surface trapping states.

• Journal of Surface Science and Engineering
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• v.52 no.5
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• pp.258-264
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• 2019

Assembling heterostructures by combining dissimilar oxide semiconductors is a promising approach to enhance charge separation and transfer in photoelectrochemical (PEC) water splitting. In this work, the CuO nanorods array/$Cu_2O$ thin film bilayered heterostructure was successfully fabricated by a facile method that involved a direct electrodeposition of the $Cu_2O$ thin film onto the vertically oriented CuO nanorods array to serve as the photoelectrode for the PEC water oxidation. The resulting copper-oxide-based heterostructure photoelectrode exhibited an enhanced PEC performance compared to common copper-oxide-based photoelectrodes, indicating good charge separation and transfer efficiency due to the band structure realignment at the interface. The photocurrent density and the optimal photocurrent conversion efficiency obtained on the CuO nanorods/$Cu_2O$ thin film heterostructure were $0.59mA/cm^2$ and 1.10% at 1.06 V vs. RHE, respectively. These results provide a promising route to fabricating earth-abundant copper-oxide-based photoelectrode for visible-light-driven hydrogen generation using a facile, low-cost, and scalable approach of combining electrodeposition and hydrothermal synthesis.

• Journal of Surface Science and Engineering
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• v.52 no.4
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• pp.211-226
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• 2019

Optical thin films were deposited by using a reactive pulsed DC magnetron sputtering method with a high density plasma(HDP). In this study, the effect of sputtering process conditions on the microstructure and optical properties of $SiO_2$, $TiO_2$, $Nb_2O_5$ thin films was clarified. These thin films had flat and dense microstructure, stable stoichiometric composition at the optimal conditions of low working pressure, high pulsed DC power and RF power(HDP). Also, the refractive index of the $SiO_2$ thin films was almost constant, but the refractive indices of $TiO_2$ and $Nb_2O_5$ thin films were changed depending on the microstructure of these films. Antireflection films of $Air/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/Glass$ structure designed by Macleod program were manufactured by our developed sputtering system. Transmittance and reflectance of the manufactured multilayer films showed outstanding value with the level of 95% and 0.3%, respectively, and also had excellent durability.

• Polymer(Korea)
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• v.28 no.5
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• pp.374-381
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• 2004

Gas permeability of low density polyethylene (LDPE) film containing zeolite powder for $CO_2,\;O_2$ and $N_2$ were investigated. Zeolite powders modified by cations or surfactant were compounded with LDPE to produce $20 wt\%$ masterbatch. After blending the masterbatch with LDPE, zeolite filled films were prepared by the blown film process. Finally, the composite films containing zeolite loadings of 0, 3,5, and $10 wt\%$ were produced. A gas permeability apparatus based on the variable volume principle was designed to analyze the characteristics of films. Experiments showed a general trend that gas permeabilities first decreased and then increased as the zeolite content was increased. Surfactant modified zeolite showed a better interfacial adhesion with the matrix, but the film did not show a discernible difference in gas permeability compared with the other modified films. The difference of temperature dependences in the gas permeabilities of composite films was slightly smaller than that of LDPE film.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.111-115
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• 2015

To improve the efficiency of the Si solar cell, high minority carrier life time is required. Therefore, the passivation technology is important to eliminate point defects on the silicon surface, causing the loss of minority carrier recombination. PECVD or post-annealing of thermally-grown $SiO_2$ is commonly used to form the passivation layer, but a high-temperature process and low thermal stability is a critical factor of low minority carrier lifetime. In this study, atomic layer deposition was used to grow the $Al_2O_3$ passivation layer at low temperature process. $Al_2O_3$ was selected as a passivation layer which has a low surface recombination velocity because of the fixed charge density. For the high charge density, an improved minority carrier lifetime, and a low surface recombination, nitrogen was doped in the $Al_2O_3$ thin film and the improvement of passivation was studied.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.260-262
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• 2002

An accurate measurement of dose distribution is indispensable to perform radiation therapy planning. A measurement technique using a radiographic film, which is called a film dosimetry, is widely used because it is easy to obtain a dose distribution with a good special resolution. In this study, we tried to develop an analyzing system for the film dosimetry using usual office automation equipments such as a personal computer and an image scanner. A film was sandwiched between two solid water phantom blocks (30 ${\times}$ 30 ${\times}$ 15cm). The film was exposed with Cobalt-60 ${\gamma}$-ray whose beam axis was parallel to the film surface. The density distribution on the exposed film was stored in a personal computer through an image scanner (8bits) and the film density was shown as the digital value with NIH-image software. Isodose curves were obtained from the relationship between the digital value and the absorbed dose calculated from percentage depth dose and absorbed dose at the reference point. The isodose curves were also obtained using an Isodose plotter, for reference. The measurements were carried out for 31cGy (exposure time: 120seconds) and 80cGy (exposure time: 300seconds) at the reference point. While the isodose curves obtained with our system were drawn up to 60% dose range for the case of 80cGy, the isodose curves could be drawn up to 80% dose range for the case of 31cGy. Furthermore, the isodose curves almost agreed with that obtained with the isodose plotter in low dose range. However, further improvement of our system is necessary in high dose range.