Journal of Integrative Natural Science (통합자연과학논문집)

The Basic Science Institute Chosun University (조선대학교 기초과학연구원)
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Fabrication and Characterization of Free-Standing DBR Porous Silicon Film

  • Received : 2014.01.10
  • Accepted : 2014.02.20
  • Published : 2014.03.30
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Abstract

Distributed Bragg reflector porous silicon of different characteristics were formed to determine their optical constants in the visible wavelength range using a periodic square wave current between low and high current densities. The surface and cross-sectional SEM images of distributed Bragg reflector porous silicon were obtained using a cold field emission scanning electron microscope. The surface image of distributed Bragg reflector porous silicon indicates that the distributions of pores are even. The cross-sectional image illustrates that the multilayer of distributed Bragg reflector porous silicon exhibits a depth of few microns and applying of square current density during the etching process results two distinct refractive indices in the contrast. Distributed Bragg reflector porous silicon exhibited a porosity depth profile that related directly to the current-time profile used in etch. Its free-standing film was obtained by applying an electro-polishing current.

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References

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  2. Chemical Sensors Based on Distributed Bragg Reflector Porous Silicon Smart Particles vol.8, pp.1, 2015, https://doi.org/10.13160/ricns.2015.8.1.67